• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.679-686
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• 2018

Reverse osmosis (RO) concentration of sodium chloride, sodium acetate, and sodium citrate solutions has been performed by polyamide RO membrane. Concentration polarization phenomena was also studied by changing pressure, solute kinds, and initial solution concentration. Pressure effect on permeation flux was that the increase of flux was accompanied by the increase of pressure. Flux increase was observed by the decrease of initial solution concentration. Surface concentration on the RO membrane increases and so flux declines due to the concentration polarization. In the later phase of concentration, concentration polarization effect was decreased by the back diffusion of solute from the polariztion layer. In case of sodium citrate, its large ion size and charge density resulted in the discrepancy between theory and experimental data of concentration polarization. It may be due to electric repulsion on the membrane surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.71-82
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• 1984

A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.

• Journal of IKEEE
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• v.15 no.4
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• pp.324-329
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• 2011

In recent years, the performance and functions of portable devices has increased. so it requires more power efficiency and energy density while using the battery for a long time. therefore Battery pack which are made up from several battery cells in series in order to achieve higher operating voltage is being used. when using a Li-ion battery, we need a protection circuit to protect from overcharge, over discharge, high temperature and over current. Also, when using battery pack, we need to Cell voltage balancing circuit that each cell in tune with the balancing. In this paper, the proposed IC is applicable by mobile devices as well as E-bike, hybrid vehicles, electric vehicles, and is expected to contribute to the development of domestic PMIC.

• Corrosion Science and Technology
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• v.11 no.2
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• pp.65-69
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• 2012

One dimensional(1D) $Na_2Ti_6O_{13}$ nanorods with 70 nm in diameter was synthesized by a molten salt method. Using the synthesized nanorods, about 750 nm thick $Na_2Ti_6O_{13}$ film was coated on Fluorine-doped tin oxide(FTO) glasss substrate by the Layer-by-layer self-assembly(LBL-SA) method in which a repetitive self-assembling of ions containing an opposite electric charge in an aqueous solution was utilized. Using the Kubelka-Munk function, the band gap energy of the 1D-$Na_2Ti_6O_{13}$ nanorods was nalyzed to be 3.5 eV. On the other hand, the band gap energy of the $Na_2Ti_6O_{13}$ film coated on FTO was found to be a reduced value of 2.9 eV, resulting from the nano-scale and high porosity of the film processed by LBL-SA method, which was favorable for the photo absorption capability. A significant improvement of photocurrent and onset voltage was observed with the $Na_2Ti_6O_{13}$ film incorporated into the conventional $Fe_2O_3$ photoelectrode: the photocurrent increased from 0.25 to 0.82 mA/$cm^2$, the onset voltage decreased from 0.95 to 0.78 V.

• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.257-264
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• 1985

Dioxobis(3-methoxysalicyaldehydato)molybdeum(VI) complex has been synthesized by reactions of 3-methoxysalicylaldehyde and ammonium paramolybdate in methanol solution. With appropriate primary amine, the resulting complex gave schiff-base complexes, MoO$_2$(CH$_3$O-sal-N-R)$_2$ in which C=O oxide ligands had been replaced by nitrogen. The properties and possible molecular structure of these complexes were discussed by elemental analysis, spectroscopic studies and electric conductivities measurements. It was found that the Mo(VI) complexes contain a cis-MoO$_2$ group since their infrared spectra two Mo=O band at about 900cm$^{-1}$ and the combining ratios for MoO$_2$-ligand are 1 : 2. Also, electronic spectra of molybdenyl complexes assigned to ligand-to-metal charge transfer transition. All of these complexes are yellow or orange, depolar compound and slightly soluble in alcohol, dichloromethane, chloroform and N,N-dimethylformamide.

• International Journal of Automotive Technology
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• v.7 no.1
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• pp.1-7
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• 2006

The ignition delay of a dual fuel system has been numerically investigated by adopting a constant volume chamber as a model problem simulating diesel engine relevant conditions. A detailed chemical kinetic mechanism, consisting of 28 species and 135 elementary reactions, of dimethyl ether (DME) with methane ($CH_{4}$) sub-mechanism has been used in conjunction with the multi-dimensional reactive flow KIVA-3V code to simulate the autoignition process. The start of ignition was defined as the moment when the maximum temperature in the combustion vessel reached to 1900 K with which a best agreement with existing experiment was achieved. Ignition delays of liquid DME injected into air at various high pressures and temperatures compared well with the existing experimental results in a combustion bomb. When a small quantity of liquid DME was injected into premixtures of $CH_{4}$/air, the ignition delay times of the dual fuel system are longer than that observed with DME only, especially at higher initial temperatures. The variation in the ignition delay between DME only and dual fuel case tend to be constant for lower initial temperatures. It was also found that the predicted values of the ignition delay in dual fuel operation are dependent on the concentration of the gaseous $CH_{4}$ in the chamber charge and less dependent on the injected mass of DME. Temperature and equivalence ratio contours of the combustion process showed that the ignition commonly starts in the boundary at which near stoichiometric mixtures could exists. Parametric studies are also conducted to show the effect of additive such as hydrogen peroxide in the ignition delay. Apart from accurate predictions of ignition delay, the coupling between multi-dimensional flow and multi-step chemistry is essential to reveal detailed features of the ignition process.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.527-532
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• 2014

$0.97Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3-0.03LaFeO_3$ lead-free piezoelectric ceramics were fabricated by a solid state reaction method. $LaFeO_3$ additives were added to $Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3$ for volatile compensation of bismuth and sodium ions in the sintering process. To create A-site vacancies, the mole ratio and charge valence of A-site ions ($Bi^{3+}$, $Na^+$ and $K^+$) were controlled. The improved piezoelectric properties were observed by addition of $LaFeO_3$ and control of A-site vacancies. In particular, a $d_{33}^*(S_{max}/E_{max})$ value of 614pm/V and an electric field induced strain of 0.33% was observed in $0.97Bi_{0.505}(Na_{0.78}K_{0.22})_{0.485}TiO_3-0.03LaFeO_3$ ceramic.