• Current Optics and Photonics
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• 제2권4호
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• pp.378-382
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• 2018

In most previous investigations of plasmonic and metamaterial applications, the metallic film has been regarded as a perfect electrical conductor. Here we demonstrate the resonance characteristics of THz metamaterials fabricated from metal film that has a finite dielectric constant, using finite-difference time-domain simulations. We found strong redshift and spectral broadening of the resonance as we decrease the metal's plasma frequency in the Drude free-electron model. The frequency shift can be attributed to the effective thinning of the metal film, originating from the increase in penetration depth as the plasma frequency decreases. On the contrary, only peak broadening occurs with an increase in the scattering rate. The metal-thickness dependence confirms that the redshift and spectral broadening occur when the effective metal thickness drops below the skin-depth limit. The electromagnetic field distribution illustrates the reduced field enhancement and reduced funneling effects near the gap area in the case of low plasma frequency, which is associated with reduced charge density in the metal film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.25-33
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• 1994

Temperature dependences of the remanent polarization $P_{\gamma}$/(T), effective birefringence ㅿｎ(T). dielectric constant K(T) and quadratic electro-optic coefficient R(T) of the two-stage sintered xBa(La$_{1/2}$Nb$_{1/2}$)O$_3$Pb$(Zr_{y}Ti_{1-y})O-{3}$(x=0.085, 0.09, 0.40$\leq$y$\leq$0.70)ceramics were investigated. Increasing the PbZrO$_3$ contents, the crystal structure of a specimen was varied from tetragonal and rhombohedral to cubic, and the phase transition was showed a diffuse phase transition(DPT) characteristics. Especially. in the compositions which located on the PE-FE phase boundary were showed a discrepancy between curie temperature and temperature range which a macroscopic polarization and a effective birefringence were disappeared.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.730-735
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• 2003

본 논문에서는 BSTO 강유전체를 이용한 가변 대역통과필터들을 4가지 유형의 예를 들어 제안한다. 제안 기술에서 인가 전압이 증가할수록 강유전체의 유효 유전율은 비선형적으로 감소하고 따라서 중심 주파수가 높은 쪽으로 이동한다 이 때 사용하는 강유전체로는 STO와 BSTO가 있는데 STO는 100K 이하의 저온에서, BSTO는 실온에서 주로 사용한다. 본 제안 기술은 차세대 무선통신 기술 발전에 매우 유용하게 기여 할 것으로 보인다.

• 전자공학회논문지D
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• 제35D권10호
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• pp.1-6
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• 1998

플라스틱 실장된 GaAs(ε/sub r/=13) MMIC (Monolithic Microwave Integrated Circuits) 마이크로스트립의 플라스틱 유전체에 의한 영향을 SDM (Spectral Domain Method)을 이용하여 해석하였다. 현재 초고주파 실장용 및 PCB 기판 재료로 널리 사용되는 FR-4 composites(ε/sub r/=4.2)를 이용하여 플라스틱 실장할 경우, GaAs MMIC 마이크로스트립의 특성 임피던스는 실장 전에 비하여 약 6 % 감소하고, 유효 유전상수는 약 13 % 증가한다. 이러한 플라스틱 유전체에 의한 기생 특성은 실장된 고주파 집적회로의 성능 저하를 초래할 수 있으므로 본 논문에서는 이러한 플라스틱 유전체 영향을 고려하여 실장후에도 50 Ω 정합 특성을 유지할 수 있는 스트립 폭을 계산하였다. 본 연구의 결과는 저가격 플라스틱의 실장 구조를 최적화시킴으로써 그 응용 범위를 확대하는데 유용하게 사용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.30-32
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• 2005

The effects of mole ratio and Ti-ion on the dielectric properties and microstructure of modified $CaZrO_3$ composition such as $(Ca_{0.7}Sr_{0.3})_m(Ti_yZr_{1-y})O_3$ were investigated. Ti ions substituted on Zr-sites in these modified $CaZrO_3$ composition strongly affect the sintering density and microstructure of the fired ceramic body. With increasing the amount of Ti substituted on Zr-sites, the sintered density rapidly increased and the dense microstructures were obtained for the compositions having mole ratio of 1.01, whereas the sintered density and microstructures are nearly constant with the content of Ti-ion for the compositions having mole ratio of 0.99. With increasing the content of Ti ion, the curve of TCC (temperature coefficient of capacitance) as a function of temperature rotated clockwise and satisfied the COG characteristics for both of compositions with mole ratio of 0.99 and 1.01. The content of Ti ion seems to be more effective than mole with respect to the controlling of firing and TCC.

• 한국통신학회논문지
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• 제10권6호
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• pp.335-342
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• 1985

마이크로 스트립 線路에서 周波數의 函數인 實效誘電率에 따른 分散特性을 計算하기 위하anar Waveguide 모델이 提示되었으며 各 파라미터 變化에 의한 結果를 比較하였다. 多樣한 比誘電率과 스트립幅/基板두께(W/h)는 0.9$\leq$W/h$\leq$2의 比를 使用하여 比較하였다. 컴퓨터 시뮬레이션 結果, 各各의 境遇에 對해 Planar Waveguide 모델을 利用한 定規化 位相速度가 이미 發表된 바 있는 다른 方法보다 周波數가 增加함에 따라 1/$\sqrt{\epsilon_r}$ 의 값에 가장 接近하였다.

• 지질공학
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• 제27권3호
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• pp.305-312
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• 2017

The most effective way to distinguish subsurface interfaces that produce various geophysical responses is through the integration of multiple geophysical methods, with each method detecting both a complementary and unique set of distinct physical properties relating to the subsurface. In this study, shallow seismic reflection (SSR) and ground penetrating radar (GPR) surveys were conducted at the Cheongju-Gadeok site of the Korea National Groundwater Monitoring Network to map the water table, which was measured at 12 m depth during the geophysical surveys. The water table proved to be a good target reflector in both datasets, as the abrupt transition from the overlying unsaturated weathered rock to the underlying saturated weathered rock yielded large acoustic impedance and dielectric constant contrasts. The two datasets were depth converted and integrated into a single section, with the SSR and GPR surveys conducted to ensure subsurface imaging at approximately the same wavelength. The GPR data provided detailed information on the upper ~15 m of the section, whereas the SSR data imaged structures at depths of 10-45 m. The integrated section thus captured the full depth coverage of the sandy clay, water table, weathered rock, soft rock, and hard rock structures, which correlated well with local drillcore and water table observations. Incorporation of these two geophysical datasets yielded a synthetic section that resembled a simplified aquifer model, with the best-fitting seismic velocity, dielectric constant, and porosity of the saturated weathered layer being $v_{seismic}=1000m/s$, ${\varepsilon}_r=16$, and ${\phi}=0.32$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.190-195
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• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.