• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• 전자공학회논문지
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• 제50권3호
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• pp.16-22
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• 2013

n 개의 균일한 결합선로를 해석하기 위하여 2n-port 어드미턴스 매트릭스의 추출에 기초한 일반적인 특성화 절차가 제시된다. 본 논문에서는 비대칭 다중 결합선로를 해석하기 위하여 시간영역의 유한차분법을 사용하여 정규화 모드 파라미터 접근법의 적용을 제안한다. 주파수 의존적인 정규화 모드 파라미터는 2n-port 어드미턴스 매트릭스로부터 얻어지고, 이로부터 주파수 의존적인 전파상수와 유효 유전율 및 결합선로의 특성임피던스를 계산할 수 있다. 이 기법을 설명하기 위해 몇몇의 실질적인 다중 유전체상의 결합선로 구조들이 모의 실험되었으며, 특히 전도체가 유전체 사이에 내재된 형태의 선로가 해석되었다. 시간영역 유한 차분법을 활용한 결과는 Spectral Domain Method의 모의실험 결과와 비교하였고, 잘 일치함을 보였다. 시간영역의 특성화 절차에 기인한 유한차분법은 얇거나 두꺼운 혼성 구조 뿐 아니라 다층 PCB상의 다중의 전도체 결합 선로 설계를 위한 훌륭한 광대역 모의실험 도구가 됨을 볼 수 있다.

• 한국군사과학기술학회지
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• 제4권2호
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• pp.122-129
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• 2001

A characterization procedure for analyzing symmetric coupled MIS(Metal-Insulator-Semiconductor) transmission line is used the same procedure as a general single layer symmetric coupled line with perfect dielectric substrate from the extraction of the characteristic impedance and propagation constant for even- and odd-mode. In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite- Difference Time-Domain(FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Symmetric coupled MIS transmission line parameters for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency- dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• 한국세라믹학회지
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• 제53권2호
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• pp.171-177
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• 2016

Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2004년도 추계학술발표대회 논문집
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• pp.175-179
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• 2004

Since the electromagnetic properties of fiber reinforced polymeric composites can be tailored effectively by adding small amount of electromagnetic powders to the matrix of composites, they are plausible materials for fabricating the radar absorbing structures (RAS) of desired performance. In order to design the effective electromagnetic wave (EM) absorber with the fiber reinforced polymeric composites, the electromagnetic characteristics with respect to the constituents of the composite should be available in the target frequency band. In order to describe the dielectric behavior of low loss unidirectional fiber reinforced composite, theoretical models and mixture equations for estimating its dielectric constant were proposed with respect to the fiber, matrix volume fractions and fiber orientations, and verified by the experiments. From the investigation, it was found that the suggested binary mixture rules agreed well with the experimental results.

• 연구논문집
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• 통권25호
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• pp.185-192
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• 1995

The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.

• 한국전자파학회논문지
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• 제26권5호
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• pp.506-513
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• 2015

본 논문에서는 메타물질 흡수체를 사용한 새로운 에탄올 농도 검출 센서를 제안한다. 메타물질 흡수체는 분할고리십 자공진기(SRCR: Split Ring Cross Resonator) 구조와 미세유체 채널로 구성되어 있다. SRCR 구조는 capacitive 간극 부근의 실효 유전율에 민감하게 반응하는 LC 공진을 발생시킨다. 미세유체 채널은 마이크로 리터 단위의 극미량 액체를 사용하여 유전체 기판의 실효 유전율을 변화시킬 수 있다. 본 연구에서 제안한 미세유체 메타물질 흡수체는 미세유체 채널에 주입된 에탄올의 농도에 따른 전기적 특성을 감지하여 그 농도를 검출할 수 있다. 제안된 흡수체는 도파관 측정법을 사용하여 측정하였고, 미세유체 채널에 각기 다른 농도의 에탄올이 흐를 때 공진 주파수가 이동하는 것을 확인하였다. 또한, 시뮬레이션과 측정 결과 사이에 높은 일치율을 보인다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.191-191
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• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• Composites Research
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• 제17권5호
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• pp.68-77
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• 2004

레이더 혹은 전자-통신장비에서 방출되는 전자파의 흡수/차폐는 군사적인 목적뿐만 아니라 상업적 목적으로도 매우 중요하다. 효과적인 전자기파 흡수체를 설계하기 위해서는 흡수체에 사용되는 재료의 대상 주파수 대역에서의 전자기적 성질을 정확히 알아야 하며, 손실재의 함량에 따른 정확한 전자기물성 예측이 가능해야 한다 본 연구에서는 전도성 카본 블랙 나노 입자를 함유하는 폴리에스터 복합재료의 유전성질을 자유공간 기법을 이용하여 X-Band 주파수 대역에 걸쳐 측정하고 카본 블랙의 함량에 따라 정량적으로 분석하였으며, 임의의 카본 블랙 함량을 갖는 고분자 수지의 유전 물성을 주파수에 따라 예측할 수 있는 방법을 제시하고 검증하였다.