• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.30-33
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• 1998

We present the analysis of phase-shifted fiber Bragg gratings by coupled-mode equations. The transmission is expressed as that of a Fabry-Perot resonator with complex reflectance and complex transmittance. The transmission spectrum, the effective cavity length, and the behaviors with different phase-shifts are investigated. A very flattered transmission peak is obtained by introducing three phase-shifts in a grating.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.6
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• pp.569-577
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• 2012

In this study, a theoretical investigation of optimized sleeper spacing which can suppress resonances of a railway track is attempted. To achieve this, we introduced a minimization problem in which the objective function is given by the wave transmittance and the design variable is defined by sleeper distribution. In the analysis the rail is modeled by a Timoshenko beam and the sleeper is represented by a mass. The infinite track analysis is realized by attaching the transmitting boundaries at both ends of the finite optimization region. Through numerical analyses the sleeper spacing effective in reduction of the transmittance is discussed. Furthermore, the feasibility of the proposed method is validated in the aspect of vibration reduction through response analyses for a harmonic load.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• Journal of the Korean Ceramic Society
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• v.39 no.11
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• pp.1028-1034
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• 2002

Spinel/zirconia-glass composites prepared by melt-infiltration were fabricated to investigate the effect of zirconia addition on mechanical and optical properties of the composites. The infiltration distance was parabolic with respect to time as described by the Washburn equation and the penetration rate constant, K, decreased due to the reduction in pore size as the amount of zirconia rose. Although the optimum strength(308 MPa) of the Spinel/zirconia-glass composites was observed when the zirconia was added up to 20 wt%, K and transmittance decreased as the zirconia content rose. In conclusion, it suggested that the positive effect of strength as a result of the addition of zirconia was not effective.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.68-74
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• 2018

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

• Journal of the Korean Society of Tobacco Science
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• v.28 no.2
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• pp.111-116
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• 2006

It is very important to add uniformly casing materials on tobacco for taste and flavor. However, analysis of casing materials was spent much time, effort and money. The object of this study was the development of a rapid method for the determination of glycerine, propylene glycol(PG), sucrose, glucose, fructose and water in the casing materials using the NIR transmittance method. Hundreds of calibration samples, with extended ranges (50%, 75%, 100%, 125%, and 150% of standard addition) in each constituent, were prepared in the casing materials at the various temperatures $(25^{\circ}C\;and\;30^{\circ}C)$. Calibration equation was developed by modified partial least square (MPLS) method using second derivative. The standard error of calibration and $R^2$ between added value and NIR estimated value results were $0.007{\sim}0.034\;and\;0.996{\sim}1.000$ for the casing sample set, respectively. The standard error of prediction and R2 between added value and NIR estimated value results were $0.010{\sim}0.034\;and\;0.997{\sim}1.000$ for the casing sample set, respectively. The analysis result was not different significantly between the NIR and added value. These results show that the NIR measurement system is an effective tool to ensure quality on the casing materials.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of the Optical Society of Korea
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• v.17 no.2
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• pp.200-204
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• 2013

We propose a cell structure for the fast switching of liquid crystals by the fringe field. By forming protrusion between patterned electrodes, we can obtain enhancement of response time. The protrusion reduces the effective cell gap, with which a fast response time can be realized. There is little decrease in the transmittance because the protrusion is located between patterned electrodes. We confirmed that the total response time can be decreased by 33% with little loss of the transmittance by optimizing the shape of the protrusion structure.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.2-94.2
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• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.387.1-387.1
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• 2016

Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.