• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.423-423
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• 2009

Currently, lasers are one of the most popular light sources in use for medical treatment. Many studies on low power lasers are being done in cell culture or through animal tests and most report different findings, making it difficult to verify their true effects. There are shifts in trends of studies from laser and LED that are expensive and generate heat problem to LED that are economically effective and safe. Its near infrared rays can penetrate deep into skin or muscle, up to 23 cm, without causing thermal damage or impairing neighboring tissues. This study verified the performance and effectiveness of an LED irradiator that was designed to emit similar wavelengths to that of a laser and thus could be used instead of a low level laser therapy in experiments on animals. And then, each experiment was performed to irradiation group and non-irradiation group for NTacSam:SD tissue cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of NTacSam:SD tissue cells was verified in irradiation group as compared to non-irradiation group. The fact that specific wavelength irradiation has an effect on cell vitality and proliferation is known through this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.295-296
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• 2009

There are various application of liquid crystal materials to devices, especially, blue phase liquid crystal (BPLC) and nano-structured liquid crystal mixture have been studied recently because BPs existing temperature range has been expanded by polymer-stabilization and liquid crystal has been confined in room which has certain coherence length so that their particular characters, such as fast response time and optically isotropic state at no electric field, could apply to advanced liquid crystal display devices. However, there is an crucial problem which is high operating voltage from low Kerr constant and limited electric field utilization using in-plain electric field. In this paper, we will analyze cell structure in the way of using electric field and show effective electric field utilization to reduce operating voltage.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2737-2742
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• 2011

Ring-opening metathesis polymerization (ROMP) of an ethyl-substituted tetracyclododecene (8-ethyltetracyclo[$4.4.0.1^{2,5}.1^{7,10}$] dodec-3-ene, Et-TCD) was carried out in the presence of a ternary catalyst system consisting of $WCl_6$, triisobutyl aluminium (iso$Bu_3Al$), and ethanol. The optimal molar ratio of Et-TCD/$WCl_3$/iso-$Bu_3Al$/ethanol was found as 500/1/3/2 at which the yield of ring-opened polymer was 100%. 1-Hexene was shown to be an effective molecular weight controlling agent for ROMP reaction of Et-TCD. The hydrogenation of the ring opened polymer (p-Et-TCD) was conducted successfully using Pd(5 wt %)/${\gamma}$-$Al_2O_3$ at $80^{\circ}C$ for 1 h. Chemical structures of p-Et-TCD and its hydrogenated product($H_2$-p-Et-TCD) were characterized using 2D NMR techniques ($^1H-^1H$ COSY and $^1H-^{13}C$ HSQC). The changes of physical properties such as thermal stability, glass transition temperature and light transmittance after the hydrogenation were also investigated using TGA, DSC, and UV.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.760-765
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• 2008

Low power laser therapy is internationally certified and is known to be effective in stimulating DNA in living organisms, increasing protein synthesis and activating cell division, smoothing blood circulation, promoting cell activation, cell regeneration and function. It also has anti-inflammatory, anti-edemic, anti-fibrous dysplastic and neuralogic hyperfunctional effects. This study was intended to verify the effect of LED irradiation therapy on wound healing in cell and animal tests by applying LED irradiator using a laser and laser diode, which was independently designed and developed to emit beams of similar wavelength to that of a laser. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity and reservation. In case of cell proliferation experiment, each experiment was performed to irradiation group and non-irradiation group for tissue cells. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590 nm transmittance of micro-plate reader. In the wound healing experiment, 1$cm^2$ wounds on the skin wound of SD-Rat(Sprague-Dawley Rat) were made. Light irradiation group and none light irradiation group divided, each group was irradiated one hour a day for 9 days. As a result, the cell increase of tissue cells was verified in irradiation group as compared to non-irradiation group. And, compared with none light irradiation group, the lower incidence of inflammation and faster recovery was shown in light irradiation group.

• Journal of IKEEE
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• v.23 no.4
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• pp.1128-1133
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• 2019

This paper proposed colored front panel glass for Building Integrated Photovoltaic (BIPV) systems using multi-layered thin films composed of transition metal oxide (TMO) layers. Molybdenum oxide (MoO₃) and tungsten oxide (WO₃) provided complementary and suitable materials in making effective interference of reflected light from interfaces with significant difference in refractive indices. A simple, fast, and cheap fabrication method was achieved by depositing the multi-layer films in a single thermal evaporator. Magenta colored glass with optical transmittance of more than 90% was achieved with MoO₃ (60nm)/WO₃(100nm) multi-layered film. This technology could play in a critical role in commercial BIPV system applications.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.48 no.2
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• pp.89-95
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• 2003

The study of this experiment is focused on labor saving of healthy rice seedling production using PSF (polypropylene spunbonded fabrics) as thermal protection material. Several factors such as different compositions of nursery soil and PSF materials were tested to produce healthy rice seedlings. The inner thermal protection material in PE film (polyethylene film) showed $0.9-1.7^{\circ}C$ higher than that of PSF 40-100 $\textrm{gm}^{-2}$. The light transmittance-ratio also showed similar trends. It is considered that the appropriate PSF material density was 40 gm$\textrm{gm}^{-2}$ in accordance with economic values and healthy rice seedlings. Plant height and dry weight according to various nursery soil showed the rang-es of 8.5-14.2cm and 5.5-10.0mg, respectively. In composition of nursery soil, artificial soil combined with paddy soil was effective in producing healthy seedling for rice seedling production. The total sugar content also showed the difference between PSF 40, 60 $\textrm{gm}^{-2}$ PE film (0.43-0.52mg FW $\textrm{g}^{-1}$) and PSF 80, 100 $\textrm{gm}^{-2}$ (0.28-0.35mg FW $\textrm{g}^{-1}$) and it showed the same tendency among varieties as well as various nursery soil. These results demonstrate that PSF 40 $\textrm{gm}^{-2}$ economically affordable, and can be recommended as thermal protection material for producing good healthy rice seedling.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.