• Title/Summary/Keyword: Edge-defined Film-fed growth

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Growth of 1 inch $LuVO_4$ single crystals by the edge-defined film-fed-growth (EFG) technique

  • Kochurikhin, V.V.;Klassen, A.V.;Kvyat, E.V.;Ivanov, M.A.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.6
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    • pp.222-224
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    • 2005
  • In suite of their superior optical and laser properties rare-earth orthovanadate single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The edge-defined film-fed-growth (EFG) technique was applied successfully for the production of such crystals. At first time 1 inch $LuVO_4$ single crystals were grown by the EFG technique using newly developed die construction of high porous iridium with the application of automatic diameter control system.

Growth of $GdVO_4$ composite single-crystal rods by the double-die edge-defined film-fed growth technique

  • Furukawa, Y.;Matsukura, M.;Nakamura, O.;Miyamoto, A.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.1
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    • pp.1-4
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    • 2008
  • The growth of composite-structured Nd:$GdVO_4$ single crystal rods by the double die EFG method is reported. Two crucibles are combined with an outer and inner die for ascending of different melt. The composite-structured Nd:$GdVO_4$ single crystal rods with a length of 50 mm and an outer diameter of 5 mm including of inner Nd-doped core region with diameter 3 mm were grown successfully. Nd distribution in the, radial direction has graded profile from result of EPMA. Absorption coefficient in the core region at 808 nm was $42cm^{-1}$. Finally, we demonstrated the laser oscillation using our composite crystal and 2-W output was obtained.

Growth of ${\gamma}-6Bi_2O_3{\cdot}GeO_2$ Single Crystals by EFG Method (EFG법에 의한 ${\gamma}-6Bi_2O_3{\cdot}GeO_2$)

  • ;;Kei-Miyamoto
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.2
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    • pp.34-45
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    • 1991
  • The fundamental conditions for growing $r-6Bi_2O_3{\cdot}GeO_2$ (BGO) single crystal plates by EFG (Edge -defined Film-fed Growth) method, were investigated and the characterization, quality test were carried out for obtained BGO single crystal plates. The optimum growing conditions determined in this study were as follows: ${\cdot}$ temperature gradient: 22^{\circ}C/cm

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Sapphire Ribbon Single Crystal Growth by EFG Method (EFG법에 의한 Sapphire Ribbon 단결정 성장)

  • 박신서;류두형;정재우;최종건;오근호;손선기;변영재;전형탁
    • Journal of the Korean Ceramic Society
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    • v.27 no.6
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    • pp.783-789
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    • 1990
  • Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

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Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure (다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석)

  • Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Gwang-Hee Jung;Jin-Ki Kang;Tae-Kyung Lee;Hyoung-Jae Kim;Won-Jae Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.1
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    • pp.1-7
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    • 2024
  • β-Ga2O3 is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga2O3 single crystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga2O3 single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method (EFG 방법으로 성장한 β-Ga2O3 단결정의 영역별 품질 분석)

  • Park, Su-Bin;Je, Tae-Wan;Jang, Hui-Yeon;Choi, Su-Min;Park, Mi-Seon;Jang, Yeon-Suk;Moon, Yoon-Gon;Kang, Jin-Ki;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.4
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    • pp.121-127
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    • 2022
  • β-Gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga2O3 has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga2O3 crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga2O3 ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga2O3 ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

Growth of ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$( Single Crystals by EFG Method (EFG법에 의한 ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$(BSO)단결정의 육성)

  • ;;Kei-Miyamto
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.26-38
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    • 1991
  • The fundamental conditions for growing $r-6Bi_2O_3{\cdot}SiO_2$(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti$\mu$ growing conditions determined in this study were as follows: ${\cdot}$temperature gradient;$24^{\circ}C/cm$ ${\cdot}$pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was $5.1\times10^5/cm^2$.

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Optical properties of $YVO_{4}$ and Nd:$YVO_{4}$ single crystals grown by developed EFG method (Developed EFG법으로 성장시킨 $YVO_{4}$ 및 Nd:$YVO_{4}$ 단결정의 광학적 특성)

  • ;;M.A. Ivanov;V.V. Kochurikhin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.4
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    • pp.180-183
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    • 2001
  • $YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

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Raman Characteristics of (100) β-Gallium Oxide Single Crystal Grown by EFG Method (EFG법을 이용한 (100) β-산화갈륨 단결정 성장 및 라만 특성 연구)

  • Shin, Yun-Ji;Cho, Seong-Ho;Jeong, Woon-Hyeon;Jeong, Seong-Min;Lee, Won-Jae;Bae, Si-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.6
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    • pp.626-630
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    • 2022
  • A 100 mm × 50 mm-sized (100) gallium oxide (Ga2O3) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga2O3 ingot were compatible with a commercial Ga2O3 substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga2O3 crystals. In particular, we observed Ag(5) and Ag(10) peaks of Raman active mode, directly related to the impurity of the grown Ga2O3 crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga2O3 single crystal quality in the future.