Reverse voltage characteristics of 4H SiC Schottky Diode by Edge termination Method (4H 탄화규소 쇼트키 다이오드에서 접합종단기법에 따른 항복전압특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2005.07a
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- pp.191-192
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- 2005