• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean Arthroscopy Society
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• v.10 no.1
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• pp.70-76
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• 2006

Purpose: This study presents 5 patients who had metallic anchor protrusion on glenoid after Bankart repair in anterior shoulder instability and reviewed the cause, clinical feature and arthroscopic removal technique. Method and Materials: 5 male with average age of 22 years (range 19 to 25 years) were included. 4 patients had arthroscopic Bankart repair and 1 patient had open repair for anterior shoulder instability. They had protruded metallic suture anchors on glenoid and the protruded suture anchors were removed arthroscopically using larger suture anchor empty inserter. Results: 4 patients had painful clicking sound with motion of abduction and external rotation and 1 patient showed shoulder instability. The ROM showed normal except mild degrees loss of external rotation. The position of protruded metallic anchor was 2, 3 and 5 O'clock in three patients and 4 O'clock in 2 patients. In 2 patients, the metallic suture anchor was malpositioned about 5mm off on the medial side from the anterior glenoid edge. All had Outerbrige classification Grade II-III chondral damage on humeral head and 1 patient showed glenoid cartilage destruction. None had shoulder instability after 2 years of follow-up. Constant score was 65 preoperatively and 89 postoperatively. ASES score was 67 preoperatively and 88 postoperatively. Conclusion: Symptoms of protruded suture anchor are not combined with instability. Most of symptoms were revealed from the rehabilitation period and confused with postoperative pain. Prompt diagnosis and early arthroscopic removal or impaction of protruded metallic suture anchor is recommended because of serious glenohumeral cartilage destruction. This is easy and simple and reproducible method to remove protruded metallic suture anchor arthroscopically.