• Journal of Intelligence and Information Systems
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• v.22 no.2
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• pp.115-125
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• 2016

The Bollinger Band indicating the current price position in the recent price action range is obtained by adding/substracting the simple standard deviation (SSD) to/from the simple moving average (SMA). In this paper, we first compare the characteristics of the SMA and the exponential moving average (EMA) in the operator's point of view. A basic equation is obtained between the interval length N of the SMA operator and the weighting factor ${\rho}$ of the EMA operator, that makes the centers of the 1st order momentums of each operator impulse respoinse identical. For equivalent N and ${\rho}$, frequency response examples are obtained and compared by using the discrete time Fourier transform. Based on observation that the SMA operator reacts more excessively than the EMA operator, we propose a novel exponential standard deviation (ESD) band centered at the EMA and derive an auto recursive formula for the proposed ESD band. Practical examples for the ESD band show that it has a smoother bound on the price action range than the Bollinger Band. Comparisons are also made for the gap corrected chart to show the advantageous feature of the ESD band even in the case of gap occurrence. Trading techniques developed for the Bollinger Band can be straight forwardly applied to those for the ESD band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.102-112
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• 2005

In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.175-184
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• 2006

In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.