• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.196-200
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• 2016

We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.

• Investigative Magnetic Resonance Imaging
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• v.25 no.3
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• pp.141-155
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• 2021

Purpose: To develop a 3D magnetic resonance fingerprinting (MRF) method for application in high resolution knee cartilage PD, T₁, T₂ mapping. Materials and Methods: A novel 3D acquisition trajectory with golden-angle rotating radial in k_xy direction and interleaved echo planar imaging (EPI) acquisition in the k_z direction was implemented in the MRF framework. A centric order was applied to the interleaved EPI acquisition to reduce Nyquist ghosting artifact due to field inhomogeneity. For the reconstruction, singular value decomposition (SVD) compression method was used to accelerate reconstruction time and conjugate gradient sensitivity-encoding (CG-SENSE) was performed to overcome low SNR of the high resolution data. Phantom experiments were performed to verify the proposed method. In vivo experiments were performed on 6 healthy volunteers and 2 early osteoarthritis (OA) patients. Results: In the phantom experiments, the T₁ and T₂ values of the proposed method were in good agreement with the spin-echo references. The results from the in vivo scans showed high quality proton density (PD), T₁, T₂ map with EPI echo train length (N_ETL = 4), acceleration factor in through plane (R_z = 5), and number of radial spokes (N_spk = 4). In patients, high T₂ values (50-60 ms) were seen in all transverse, sagittal, and coronal views and the damaged cartilage regions were in agreement with the hyper-intensity regions shown on conventional turbo spin-echo (TSE) images. Conclusion: The proposed 3D MRF method can acquire high resolution (0.5 mm³) quantitative maps in practical scan time (~ 7 min and 10 sec) with full coverage of the knee (FOV: 160 × 160 × 120 mm³).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.83-88
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• 2022

To improve the crystallinity of GaN, there are researches on surface treatment to control the difference in physical properties between GaN and heterogeneous substrate. 'Low-temperature GaN (LT-GaN)' is one of the ways to solve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in our homemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures and they presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stress relaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the high crystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed of polycrystalline.

• Journal of Environmental Health Sciences
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• v.38 no.3
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• pp.195-203
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• 2012

Objectives: This paper aims to investigate the influence on stress hormones of job stress resulting from firefighting duties, as well as the degree of such influence. Methods: KOSS-26 and stress hormones such as norepinephrine (NE), epinephrine (EPI), adrenocorticotrophic hormone (ACTH), and cortisol were analyzed for 191 male firefighters from the western area of Incheon, the Incheon Industrial Complex, and Bucheon, Korea. Job stress and stress hormones were compared between a office working group and field-working group. Results: There was no significant difference in EPI and ACTH between the two groups. Change of stress hormones prior to engaging in typical duties, following typical duties, and immediately after field activities was examined. All the EPI, ACTH, and cortisol showed statistically significant changes with time, but not NE in the blood. In the field-working group, the cortisol levels in the blood of the firefighting and rescue groups showed notable differences depending on the time at which the measurements were taken. Conclusion: The differences in stress hormone levels depending on the type of duties of the firefighters were identified. Thus, interventions proper to job requirements is required in order to ease stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1994.04a
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• pp.286-286
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• 1994

Thrombin (0.25 U/ml : TB), 소-피부 collagen (200 $\mu\textrm{g}$/ml : CG), adenosine 5'-diphesphate (4,0 $\times$ $10^{-5}$M : ADP), 및 epinephrine (4,0 $\times$ 10 $^{-5}$M : EPI)의 가토-혈소판 응집과 단백인산화작용에 미치는 PDE-I (3-isobutyl-1-methylxanthine : IBMX, 및 KR 30075), amitriptyline (AP), chlorpromazine (CP), 및 sodium nitrogrosside (SNP)의 염향을 비교-검토하였다. 그 결과, KR은 2,2 $\times$ $10^{-7}$M 이하의 $IC_{50}$/에서 EPI > ADP > CG > TB 순으로 각각을 억제하였으며, SNP 보다도 강하였고; KR-30075보다 약하나 IBMX, AP, 및 CP도 각 응집재의 작용을 억제하였으며 특히 EPI에 대하여 $10^{-8}$M 이하의 $IC_{50}$/에서 유의한 억제력을 보였다. 각 응집제들은 41 kD 인산화는 유의하게 증가시키며 47 kD와 20 kD 단백인산화는 감소시켰는데; 모든 항응집성 약물이 41 kD 인산화-증가는 유의하게 억제하였다, 아울러, AP와 CP는 47 kD 단백인산화-감소에 영향을 미치지 않았으나 20 kD 단백인산화-감소는 억제하였다. PDE-I (IBMX와 KR)와 SNP는 47 kD와 20 kD 단백인산화-감소를 다소 약화시켰으며, 43 kD와 22 kD 단백인산화를 KR > IBMX > SNP순으로 유의하게 증가시켰고, KR의 22 kD 단백인산화작용은 현저하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.3
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• pp.573-579
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.305-308
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• 2002

More complex radiotherapy techniques using multi leaf collimation(MLC) such as intensity-modulated radiation therapy(IMRT) has been increasing the significance of verification of leaf position and motion. Due to the reliability and robustness, quality assurance(QA) of MLC is usually performed with portal films. However, the advantage of ease of use and capability of providing digital data of electronic portal imaging devices(EPIDs) have attracted many attentions as alternatives of films for routine quality assurance in spite of the concerns about their clinical feasibility, efficacy, and the cost to benefit ratio. In our work, the method of routine QA of MLC using electronic portal imaging(EPI) was developed. The verification of availability of EPI images for routine QA was performed by comparison with those of the portal films which were simultaneously obtained when radiation was delivered and known prescription input to MLC controller. Specially designed test patterns of dynamic MLC were applied to image acquisition. Quantitative off-line analysis using edge detection algorithm enhanced the verification procedure in addition to on-line qualitative visual assessment. In conclusion, the EPI is available enough for routine QA with the accuracy of portal films.

• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.286-291
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• 2007

We theoretically investigated the far-field radiation pattern of epi-signal from a polystyrene sphere in coherent anti-Stokes Raman scattering (CARS) microscopy with an objective lens of high numerical aperture. We calculated the field distribution of the incident laser beams under the tight-focusing condition and the far-field radiation pattern through coherent addition of radiation from the nonlinear polarizations (Hertzian dipoles) as the origin of CARS signal generation. The epi-radiation patterns for polystyrene spheres of different diameters are calculated, and the pattern of a sphere is also compared with that of a shell fer a diameter of 1100 nm. We finally show how the radiation pattern of the polystyrene sphere changes as the center of the sphere shifts from the focus of the beam.