• Proceedings of the Computational Structural Engineering Institute Conference
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• 2001.04a
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• pp.84-91
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• 2001

In this study, the adaptive analysis procedure of crack propagation based on the element-free Galerkin(EFG) method is presented. The adaptivity analysis in quasi-static crack propagation is achieved by adding and/or removing the node along the background integration cell that are refined or recovered according to the estimated error. These errors are obtained basically by calculating the difference between the values of the projected stresses and original EFG stresses. To evaluate the performance of proposed adaptive procedure, the crack propagation behavior is investigated for several examples. The results of these examples show the efficiency and accuracy of proposed scheme in crack propagation analysis.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.159-162
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• 1997

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.2
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• pp.101-108
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• 2007

This paper presents an efficient meshless method for analyzing cracked piezoelectric structures subjected to mechanical and electrical loading. The method employs an element free Galerkin (EFG) formulation and an enriched basic function as well as special shape functions that contain discontinuous derivatives. Based on the moving least squares (MLS) interpolation approach, The EFG method is one of the promising methods for dealing with problems involving progressive crack growth. Since the method is meshless and no element connectivity data are needed, the burdensome remeshing procedure required in the conventional finite element method (FEM) is avoided. The numerical results show that the proposed method yields an accurate near-tip stress field in an infinite piezoelectric plate containing an interior hole. Another example is to study a ceramic multilayer actuator. The proposed model was found to be accurate in the simulation of stress and electric field concentrations due to the abrupt end of an internal electrode.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.77.1-77
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Steel and Composite Structures
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• v.37 no.5
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• pp.551-569
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• 2020

Vibration of vertically aligned-monolayered-nonuniform nanorods consist of functionally graded materials with elastic supports has not been investigated yet. To fill this gap, the problem is examined using the elasticity theories of Eringen and Gurtin-Murdoch. The geometrical and mechanical properties of the surface layer and the bulk are allowed to vary arbitrarily across the length. The nonlocal-surface energy-based governing equations are established using differential-type and integro-type formulations, and solved by employing the Galerkin method by exploiting admissible modes approach and element-free Galerkin (EFG). Through various comparison studies, the effectiveness of the EFG in capturing both nonlocal-differential/integro-based frequencies is proved. A constructive parametric study is also conducted, and the roles of nanorods' diameter, length, stiffness of both inter-rod's elastic layer and elastic supports, power-law index of both constituent materials and geometry, nonlocal and surface effects on the dominant frequencies are revealed.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.15 no.1
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• pp.85-94
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• 2002

In this study an adaptive node generation procedure in the Element-free Galerkin (EFG) method using bubble-meshing technique is Proposed. Since we construct the initial configuration of nodes by subdivision of background cell, abrupt changes of inter-nodal distance between higher and lower error regions are unavoidable. This unpreferable nodal spacing induces additional errors. To obtain the smooth nodal configuration the nodal configurations are regenerated by bubble-meshing technique. This bubble meshing technique was originally developed to generate a set of well-shaped triangles and tetrahedra. In odder to evaluate the effect of abrupt changes of nodal spacing, one-dimensional problems with various nodal configurations mere investigated. To demonstrate the performance of proposed scheme, the sequences of making optimal nodal configuration with bubble meshing technique are investigated for several problems.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2000.04b
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• pp.324-331
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• 2000

In this study, a new algorithm analyzing dynamic crack propagation problem by the coupling technique of Meshfree Method and Finite Element Method is proposed. The coupling procedure of two methods is presented with a short description of Meshfree Method especially, Element-free Galerkin (EFG) method. The elastodynamic fracture theory is presented, and a numerical implementation procedure for dynamic fracture analysis by Meshfree Method is also discussed. A couple of dynamic crack propagation problems illustrate the performance of the propsed technique. The accuracy of numerical solutions by the developed algorithm are compared with those of analytical solutions and experimental ones.