• 한국재료학회지
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• 제14권5호
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• 한국세라믹학회지
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• 제31권6호
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• 한국세라믹학회지
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• 제42권2호
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• pp.94-98
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• 2005

[ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.123-127
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• 2002

DRAM용 capacitor의 차세대 전극물질 후보 중의 하나인 Ru 박막을 고밀도의 ECR 플라즈마를 이용하여 식각 특성 및 식각 메커니즘을 알아보고자 하였다. 식각시 Ru은 oxygen들과 결합을 하여 RuO2 화합물들을 생성하고 RuO2 화합물들은 다시 oxygen들과 결합을 함으로써 휘발성이 강한 RuOx 화합물들을 생성하였다. 하지만 이러한 식각이 이루어지기 위해서는 oxygen이온들에 의한 충돌이 필요하며, Cl과 F 가스들을 첨가가 의해 충돌 이온의 에너지가 증가되어 RuO2와 O radical들의 반응성을 향상시켰다. 이에 휘발성이 좋은 RuO4들의 형성속도를 증가시킴으로써 식각 속도를 향상시킬 수 있었다.

• 전자공학회논문지A
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• 제32A권3호
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• 한국재료학회지
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• 제10권3호
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• pp.212-217
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• 2000

일반적으로 TFT(thin film transistor)의 유전체막으로 실리콘 질화막($Si_3$$N_4$)이나 실리콘 산화막(SiO$_2$)을 $200-300^{\circ}C$의 온도에서 증착을 하게 되는데 본 연구에서는 비정질 실리콘과 유전체막 사이의 계면 특성 특히 계면의 거칠기를 향상시키기 위해서 기존의 증착법이 아니라 비정질 실리콘(a-Si:H)과 산소 ECR 플라즈마의 반응에 의한 산화 막의 성장법을 시도했는데, 이때 기판은 의도적으로 가열하지 않았으며 특히 본 연구에서는 기존의 시도와는 달리 ECR 플라즈마를 형성할 때 마이크로파 전력에 pulse를 가하는 방법을 최초로 시도했고, 계면에 불순물의 혼입을 최대한으로 줄이기 위해서 진공을 파괴하지 않은 상태로 산화막을 연속적으로 성장시키는 방법을 이용했다. Pulse를 가했을 경우에는 pulse를 가하지 않은 경우에 비해서 화학양론적 측면, 유전상수, 산화막의 표면 평탄도 등에서 우수한 산화막이 성장했으며, 특히 비정질 실리콘과 유전체막 사이의 계면 특성을 반영하는 산화막의 표면 평탄도가 1/3정도로 획기적으로 줄어들었다.

• 한국재료학회지
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• 제14권3호
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• 한국재료학회지
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• 제8권4호
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• pp.359-361
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• 1998

$SiH_{4}$를 반응물질로 사용하여 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)로 실리콘 기판위에 증착한 수소화 비정질 실리콘(a-Si:H)으로부터 가시 photoluminescence(PL) 가 관찰되었다. a-si:H/Si로 부터의 PL은 다공질실리콘으로부터의 PL과 유사하였다. 급속열처리에 의해 $500^{\circ}C$에서 2분간 산소분위기에서 어닐링된 시편의 수소함량은 1~2%로 줄어들었고 시편은 가시 PL을 보여주지 않았는데 이는 a-Si:H의 PL과정에서 수소가 중요한 역할을 한다는 것을 뜻한다. 증착된 a-Si:H의 두께가 증가함에 따라 PL의 세기는 감소하였다. $SiH_{4}$를 사용하여 ECR-PECVD에 의해 Si상에 증착된 a-Si:H로부터의 가시 PL은 Si과 증착된 a-Si:H막 사이에 증착이 이루어지는 동안에 형성된 수소화실리콘으로부터 나오는 것으로 추론된다.