• Journal of IKEEE
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• v.24 no.1
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• pp.161-169
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• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.

• Journal of Nutrition and Health
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• v.38 no.1
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• pp.76-81
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• 2005

The effects of the amount of red pepper intake per a day on the capsaicin threshold, nutrient intake, and anthropo-metric measurements were investigated in 100 female students of university. Three 24-hour recalls were performed to estimate usual nutrient and red pepper intake of free-living participants. The solutions containing capsaicin at concentration of 0.05, 0.1, 0.2, 0.3, 0.4, 0.5ppm used for the evaluation of hot-taste detection threshold. Subjects were asked to recognize the burning sensation after tasting l0ml of each test solution in ascending order of capsaicin concentrations. Mean intake of red pepper was 4.6 g/d and the capsaicin threshold was 0.27 ppm. The detection threshold for capsaicin was correlated with the amount of pepper intake per a day. Red pepper intake was correlated with energy, protein, lipid, carbohydrate, Iron, vitamin A, vitamin B$_2$ niacin, and vitamin E intakes. However, it was not correlated with intake of calcium, vitamin B$_1$ or vitamin C. The red pepper intake was negatively correlated with fat mass and waist girth and the capsaicin threshold was also negatively correlated with pulse. In conclusion, red pepper intake was associated with nutrient intake and capsaicin threshold whereas it was negatively correlated with fat mass and waist girth.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.845-849
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• 2010

A gold nanoparticles modified carbon paste electrode (GN-CPE) has been used for the determination of atenolol (ATN) in drug formulations by cyclic voltammetry (CV), differential pulse voltammetry (DPV) and chronocoulometric methods. The results revealed that the modified electrode shows an electrocatalytic activity toward the anodic oxidation of atenolol by a marked enhancement in the current response in buffered solution at pH 10.0. The anodic peak potential shifts by -80.0 mV when compared with the potential using bare carbon paste electrde. A linear analytical curve was observed in the range of $1.96\;{\times}\;10^{-6}$ to $9.09\;{\times}\;10^{-4}\;mol\;L^{-1}$. The detection limit for this method is $7.3\;{\times}\;10^{-8}\;mol\;L^{-1}$. The method was then successfully applied to the determination of atenolol in tablets and human urine. The percent recoveries in urine ranged from 92.0 to 110.0%.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2001.11a
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• pp.145-149
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• 2001

The most of faults in gas insulation of power facilities are caused by partial discharge. Therefore we simulated partial discharge and measured the radiated electromagnetic wave emitted from partial discharge in SF$_{6}$ gas by biconical antenna. This paper describes time delay and electric fields pulse characteristics of radiated electromagnetic waves with distance(1[m], 3[m], 5[m]) between antenna and discharge source.e.

• Bulletin of the Korean Chemical Society
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• v.5 no.2
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• pp.79-82
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• 1984

This study concerns about catalyic cracking of iso-octane over cation ($Cd^{2+},\;Ca^{2+}\;and\;La^{3+}$) exchange mordenites. It deals with mordenite shape selectivity and with kinetics of this catalytic reaction. The striking feature was that over the region of cracking temperature investigated, 523-665K, the yield of isobutene was predominant, relative to that of larger or smaller carbon chain(s). This permits kinetic analysis of the heterogeneous catalytic system in terms of the modified pulse-version microcatalytic chromatography. The observed activation energy ($E_a,\;KJ\;mol^{-1}$) was found to be 46 for Cd-M, 57 for Ca-M and 59 for La-M, respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.2
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• pp.65-69
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• 2004

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1994.11a
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.237-240
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• 1991

In this paper, silicon oxynitride(SiON) films were chemically deposited by 193 nm Excimer laser irradiated parallel to the substrate. the laser pulse energy was 80 mJ, repetetion rate was 80 Hz and the laser average power was 6.4 watt, the gas ratio of $N_2O/NH_3$ was 0.75, the substrate temperature was $300^{\circ}C$, and the chamber pressure was 2 torr. And then, the interface state density($N_{ss}$) was characterized by DLTS(Deep Level Transient Spectroscopy). In addition, the capture cross section($\sigma$) and activation energy(${\Delta}E$) was also obtained. The resulting Nss values were $5.5{\times}10^{10}-3.2{\times}10^{11}(eV^{-1}cm^{-2})$, $\sigma$ was $6.64{\times}10^{-20}-2.114{\times}10^{-17}(cm^2)$, the ${\Delta}E$ of two peaks were $8.93{\times}10^{-2}$(eV), 0.375(eV).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• Investigative Magnetic Resonance Imaging
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• v.20 no.3
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• pp.181-184
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• 2016

Short inversion time inversion recovery (STIR) is widely used for spinal magnetic resonance imaging (MRI) because the pulse sequence of STIR is insensitive to magnetic field inhomogeneity and can be used to scan a large field of view. In this case report, we present a case of spinal epidural hematoma with unexpected signal decrease on a STIR image. The MRI showed an epidural mass that appeared with high signal intensity on both T1- and T2-weighted images. However, a signal decrease was encountered on the STIR image. This nonspecific decrease of signal in tissue with a short T1 relaxation time that is similar to that of fat (i.e., hemorrhage) could lead to a diagnostic pitfall; one could falsely diagnose this decrease of signal as fat instead of hemorrhage. Awareness of the nonselective signal suppression achieved with STIR pulse sequences may avert an erroneous diagnosis in image interpretation.