• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 춘계학술대회 논문집
• /
• pp.941-942
• /
• 2008

• 반도체디스플레이기술학회지
• /
• 제9권1호
• /
• pp.17-21
• /
• 2010

Currently miniaturized electron-optical columns find their way into electron beam lithography systems. For better lithography process, it is required to make smaller spot size and longer working distance. But, the micro-columns of the multi-beam lithography system suffer from chromatic and spherical aberration, even when the electron beam is exactly on the symmetric axis of the micro-column. The off-axis error of the electron emitting source is expected to become worse with increasing off-axis distance of the focusing spot. Especially the electron beams far from the system optical axis have a non-negligible asymmetric intensity distribution in the micro-column. In this paper, the effect of the off-axis e-beam source is analyzed. To analyze this effect is to introduce a micro-column model of which the e-beam emitting source is aligned with the center of the electron beam by shifting them perpendicular to the system optical axis. The presented solution can be used to analysis the performance of the multi-electron-beam system. The performance parameters, such as the working distances and the focusing position are obtained by the computational simulations as a function of the off-axis distance of the emitting source.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2003년도 춘계학술대회논문집
• /
• pp.481-484
• /
• 2003

In this study, we fabricated the master metallic nano-stamper with nano pillar patterns to apply replication processes which is adequate for mass production. Master nano patterns with various hole diameters between 300 nm and 1000 nm was fabricated by e-beam lithography. After the seed layer was deposited on the master nano patterns using e-beam evaporation, the nickel was electroformed. In each step, the shape and surface roughness of their patterns were analyzed using SEM and AFM.

• 공업화학
• /
• 제16권6호
• /
• pp.853-856
• /
• 2005

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, $Cl_2/Ar$, 그리고 $SF_6/Ar$들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, $Cl_2/Ar$, $BCl_3/Ar$을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 하계종합학술대회 논문집
• /
• pp.269-274
• /
• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2007년도 춘계학술대회 논문집
• /
• pp.185-186
• /
• 2007

• 전자공학회논문지A
• /
• 제31A권1호
• /
• pp.61-64
• /
• 1994

The NMOSFET with gate length of 0.1$\mu$m is fabricated by mix-and-match method. In this device, the electron beam lithography is used to form the gate layer, while other layers are formed by the stepper. The gate oxide is 7nm thick, and the device structure is normal LDD structure. The saturation Gm for gate length of 0.1$\mu$m is 246mS/mm. The subthreshold slope is 180mV/decade for 0.1$\mu$m gate length, but the slope is 80mV/decade for 0.3$\mu$m gate length.

• 한국진공학회지
• /
• 제12권4호
• /
• pp.288-292
• /
• 2003

Air hole 구조를 갖는 2차원 고분자 광결정 도파로를 나노 임프린트 방법으로 제작하기 위하여, e-beam lithography와 ICP etching 공정을 이용하여 기둥 구조를 갖는 실리콘 나노 마스터를 제작하였다. Air hole 구조를 갖는 광결정 구조를 얻기 위해, 실리콘 마스터 기둥의 형태를 4각형, 6각형, 12각형 및 원으로 설계하였다. 제작된 기둥의 직경과 구조를 CD-SEM과 SPM-AFM을 이용하여 측정하였으며, dose가 432 $\mu$C/$\textrm{cm}^2$일 때 최적의 dose임을 확인하였다.

• Macromolecular Research
• /
• 제13권5호
• /
• pp.435-440
• /
• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.976-979
• /
• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.