• 제목/요약/키워드: E-Beam 리소그래피

검색결과 20건 처리시간 0.031초

전자빔 리소그래피를 이용한 주사기법에 따른 패턴형상 조정 (Pattern Shape Modulation by Scanning Methods in E-Beam Lithography)

  • 오세규;김승재;김동환;박근;장동영
    • 한국생산제조학회지
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    • 제18권6호
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    • pp.558-564
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    • 2009
  • To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

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나노패터닝을 위한 고에너지 전자빔 리소그래피 시뮬레이터 개발 및 검증 (A Simulator for High Energy E-beam Lithography for Nano-Patterning)

  • 김진광;김학;한창호;전국진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.359-362
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    • 2004
  • Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

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광학 그레이팅의 사출성형제작을 위한 전자빔과 무반사 코팅층이 없는 크롬/퀄츠 마스크를 이용한 고종횡비 100nm 급 니켈 스탬퍼의 제작 (Fabrication of High Aspect Ratio 100nm-Scale Nickel Stamper Using E-Beam Writing based on Chrome/Quartz Mask Without Anti-Reflection Layer for Injection Molding of Optical Grating Patterns)

  • 서영호;최두선;이준형;제태진;황경현
    • 대한기계학회논문집A
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    • 제28권11호
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    • pp.1794-1798
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    • 2004
  • We present a fabrication method of high aspect ratio 100nm-scale nickel stamper using e-beam writing for the injection molding of optical grating patterns. Conventional nickel stamper is fabricated by nickel electroplating process which is followed by seed layer deposition. In this paper, we have used chrome coated blank mask without anti-reflection layer of CrON in order to simplified electroplating process. In experimental study, we have optimized electron-beam dosage for 100nm-scale optical grating patterns with 2.5-aspect ratio, and fabricated nickel stamper using above grating patterns as PR mold. Fabricated nickel stamper have showed height of 240$\pm$20nm and width of 116$\pm$6nm.

마이크로미터 크기의 유기 전계 효과 트랜지스터 제작 (Fabrication of Micron-sized Organic Field Effect Transistors)

  • 박성찬;허정환;김규태;하정숙
    • 한국진공학회지
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    • 제20권1호
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    • pp.63-69
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    • 2011
  • 본 연구에서는 기존 실리콘 반도체 기술 기반의 포토 및 이빔 리소그래피 공정을 통하여 유기 반도체 소자를 패터닝하였다. P3HT나 PEDOT 등의 유기 반도체는 용매에 녹기 때문에 MIMIC (micro-molding in capillaries)이나 inkjet printing 기술을 이용하여 마이크로미터 크기의 소자 제작이 가능하였으나, 펜타신은 용매에 녹지 않기 때문에 매우 복잡한 방법으로 마이크로미터 크기의 소자를 제작하여왔다. 그러나, 본 연구에서는 원자층 증착 방법으로 증착한 산화 알루미늄막을 펜타신의 보호층으로 이용하여 기존의 포토 및 이빔 리소그래피 방법으로 마이크로미터크기의 펜타신 소자를 제작하였으며 그 전기 특성을 확인하였다.

50nm급 불연속 나선형 패턴의 마스터 제작 (Fabrication of Master for a Spiral Pattern in the Order of 50nm)

  • 오승훈;최두선;제태진;정명영;유영은
    • 한국정밀공학회지
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    • 제25권4호
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    • pp.134-139
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    • 2008
  • A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

다중빔 리소그래피를 위한 초소형 컬럼의 전자빔 광학 해석에 관한 연구 (Study on The Electron-Beam Optics in The Micro-Column for The Multi-Beam Lithography)

  • 이응기
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.43-48
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    • 2009
  • The aim of this paper is to describe the development of the electron-beam optic analysis algorithm for simulating the e-beam behavior concerned with electrostatic lenses and their focal properties in the micro-column of the multi-beam lithography system. The electrostatic lens consists of an array of electrodes held at different potentials. The electrostatic lens, the so-called einzel lens, which is composed of three electrodes, is used to focus the electron beam by adjusting the voltages of the electrodes. The optics of an electron beam penetrating a region of an electric field is similar to the situation in light optics. The electron is accelerated or decelerated, and the trajectory depends on the angle of incidence with respect to the equi-potential surfaces of the field. The performance parameters, such as the working distances and the beam diameters are obtained by the computational simulations as a function of the focusing voltages of the einzel lens electrodes. Based on the developed simulation algorithm, the high performance of the micro-column can be achieved through optimized control of the einzel lens.

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전자빔 리소그래피에서의 근접효과 보정을 이용한 패턴 제작에 관한 연구 (A Study on Pattern Fabrication using Proximity Effect Correction in E-Beam Lithography)

  • 오세규;김동환;김승재
    • 반도체디스플레이기술학회지
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    • 제8권2호
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    • pp.1-10
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    • 2009
  • This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

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