• 제목/요약/키워드: Dynamic insulator

검색결과 43건 처리시간 0.028초

Application of the EKV model to the DTMOS SOI transistor

  • Colinge, Jean-Pierre;Park, Jong-Tae
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권4호
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    • pp.223-226
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    • 2003
  • The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices

AE기법을 이용한 자기애자의 손상 분석 (Analysis on Damage of Porcelain Insulators Using AE Technique)

  • 최인혁;신구용;임윤석;구자빈;손주암;임대연;오태근;윤영근
    • 한국전기전자재료학회논문지
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    • 제33권3호
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    • pp.231-238
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    • 2020
  • This paper investigates the soundness of porcelain insulators associated with the acoustic emission (AE) technique. The AE technique is a popular non-destructive method that measures and analyzes the burst energy that occurs mainly when a crack occurs in a high-frequency region. Typical AE methods require continuous monitoring with frequent sensor calibration. However, in this study, the AE technique excites a porcelain insulator using only an impact hammer, and it applies a high-pass filter to the signal frequency range measured only in the AE sensor by comparing the AE and the acceleration sensors. Next, the extracted time-domain signal is analyzed for the damage assessment. In normal signals, the duration is about 2ms, the area of the envelope is about 1,000, and the number of counts is about 20. In the damage signal, the duration exceeds 5ms, the area of the envelope is about 2,000, and the number of counts exceeds 40. In addition, various characteristics in the time and frequency domain for normal and damage cases are analyzed using the short-time Fourier transform (STFT). Based on the results of the STFT analysis, the maximum energy of a normal specimen is less than 0.02, while in the case of the damage specimen, it exceeds 0.02. The extracted high-frequency components can present dynamic behavior of crack regions and eigenmodes of the isolated insulator parts, but the presence, size, and distribution of cracks can be predicted indirectly. In this regard, the characteristics of the surface crack region were derived in this study.

단일 활선 애자의 동특성 분석 (Analysis of Dynamic characteristics for live-line insulator)

  • 오기용;박준영;이재경
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 학술대회 논문집 정보 및 제어부문
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    • pp.375-376
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    • 2008
  • 송전선로에 절연물로 사용되는 애자는 설치 이후 장시간 사용에 따라 고전압 스트레스, 기계적 스트레스, 열 및 환경 스트레스 등으로 열화가 진행되기 때문에 안정적인 전력설비 운영을 위하여 활건 애자 비파괴 열화 상태 점검이 필요하다. 본 연구에서는 비파괴 상태 진단 감시 기술인 주파수 응답 함수 측정을 통한 고유 진동수 분석을 통하여 현재 활선 애자로 사용되고 있는 NGK210, KRI210, NGK300 및 KRI300 4가지 종류 애자의 동특성 실험을 수행하였으며, 이를 통하여 애자의 결함이 발생하였을 때 고유진동수 변화를 분석하였다.

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Proposal and Characterization of Ring Resonator with Sharp U-Turns Using an SOI-Based Photonic Crystal Waveguide

  • Omura, Yasuhisa;Iida, Yukio;Urakawa, Fumio;Ogawa, Yoshifumi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권2호
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    • pp.102-109
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    • 2007
  • We propose and experimentally demonstrate a ring resonator with sharp U-turns fabricated on a silicon-on-insulator (SOI) substrate; the resonator was designed as a key part of an optical, dynamic data storage device. We discuss the optical properties of the fabricated ring resonator from the viewpoint of equi-frequency-contour behavior in a dispersion space. We successfully characterize its optical characteristics on the basis of photonic crystal physics. It is suggested that the photonic ring resonator will be applicable to optical, dynamic memory devices for optical communication systems.

액체 $N_2$의 동적 절연파괴 특성 (Dynamic Electrical Breakdown Characteristics of Liquid Nitrogen)

  • 김영석;정종만;곽민환;백승명;장현만;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.359-362
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    • 1998
  • Electrical breakdown characteristics of liquid nitrogen(LNd used as both coolant and insulator for high $T_c$ superconductor system is very important. This paper presents dynamic breakdown characteristics of liquid nitrogen by quench penomena of thermal bubble under high electric field. As the result, the breakdown mechanism of $LN_2$ depends on thermal bubble effect. The breakdown voltage decreases slightly with increasing heating. In the Electrode arrangement, electrical breakdown voltage of horizontal arrangement appears lower than that of vertical arrangement.

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Depth-dependent evaluation of residual material properties of fire-damaged concrete

  • Kim, Gyu-Jin;Kwak, Hyo-Gyoung
    • Computers and Concrete
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    • 제20권4호
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    • pp.503-509
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    • 2017
  • In this study, fire-damaged concrete was investigated by a nonlinear resonance vibration (NRV) technique, in order to evaluate its residual material properties. For the experiments, five cubic concrete specimens were prepared and four of them were damaged at different temperatures using a furnace. With a thermal insulator wrapped at the sides of specimen, thermal gradation was applied to the samples. According to the peak temperatures and depths of the samples, nonlinearity parameters were calculated with the NRV technique before the tendency of the parameters was evaluated. In addition, compressive strength and dynamic elastic modulus were measured for each sample and a comparison with the nonlinearity parameter was carried out. Through the experimental results, the possibility of the NRV technique as a method for evaluating residual material properties was evaluated.

Top-Silicon thickness effect of Silicon-On-Insulator substrate on capacitorless dynamic random access memory cell application

  • 정승민;김민수;조원주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.145-145
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    • 2010
  • 반도체 소자의 크기가 수십 나노미터 영역으로 줄어들면서, 메모리 소자 또한 미세화를 위해 새로운 기술을 요구하고 있다. 1T DRAM은 하나의 트랜지스터와 하나의 캐패시터 구조를 가진 기존의 DRAM과 달리, 캐패시터 영역을 없애고 하나의 트랜지스터만으로 동작하기 때문에 복잡한 공정과정을 줄일 수 있으며 소자집적화에도 용이하다. 또한 SOI (Silicon-On-Insulator) 기판을 사용함으로써 단채널효과와 누설전류를 감소시키고, 소비전력이 적다는 이점을 가지고 있다. 1T DRAM은 floating body effect에 의해 상부실리콘의 중성영역에 축적된 정공을 이용하여 정보를 저장하게 된다. floating body effect를 발생시키기 위해 본 연구에서는 SOI 기판을 사용한 MOSFET을 사용하였는데, SOI 기판은 불순물 도핑농도에 따라 상부실리콘의 공핍층 두께가 결정된다. 실제로 불순물을 $10^{15}cm^{-3}$ 정도 도핑을 하게 되면 완전공핍된 SOI 구조가 된다. 이는 subthreshold swing값이 작고 저전압, 저전력용 회로에 적합한 특성을 보이기 때문에 부분공핍된 SOI 구조보다 우수한 특성을 가진다. 하지만, 상부실리콘의 중성영역이 완전히 공핍되어 정공이 축적될 공간이 존재하지 않게 된다. 이를 해결하기 위해 기판에 전압을 인가 후 kink effect를 확인하여, 메모리 소자로서의 구동 가능성을 알아보았다. 본 연구에서는 상부실리콘의 두께가 감소함에 따라 1T DRAM의 메모리 특성변화를 관찰하고자, TMAH (Tetramethy Ammonuim Hydroxide) 용액을 이용한 습식식각을 통해 상부실리콘의 두께가 각기 다른 소자를 제작하였다. 제작된 소자는 66 mv/dec의 우수한 subthreshold swing 값을 나타내며 빠른 스위칭 특성을 보였다. 또한 kink effect가 발생하는 최적의 조건을 찾고, 상부실리콘의 두께가 메모리 소자의 쓰기/소거 동작의 경향성에 미치는 영향을 평가하였다.

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Quench에 의해 유도되는 액체 $N_2$의 절연파괴 특성 (Breakdown Characteristics of Liquid Nitrogen Induced by Quench)

  • 김영석;정종만;곽민환;정순용;김상현
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권1호
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    • pp.23-28
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    • 1999
  • Electrical breakdown characteristics of liquid nitrogen($LN_2$) used as both coolant and insulator for high $T_c$ superconductor system are very important. This paper presents dynamic breakdown characteristics fo $LN_2$ by quench phenomena of thermal bubble under high electric field. Experimental results revealed dynamic breakdown voltage fell down drastically compared with the static breakdown voltage without the quench. Because of increasing heat power, bubble size becomes big and breakdown voltage decreases. The breakdown voltage mechanism of $LN_2$ depends on thermal bubble effect. In the Electrode arrangement, electrical breakdown voltage of horizontal arrangement appears lower than that of vertical arrangement. Also, we observed the behavior of thermal bubbles in $LN_2$ which were generated after quench using camera.

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극저온 액체의 동적 절연파괴 특성 (Dynamic Electrical Breakdown Characteristics of Cryogenic Liquid)

  • 김상현;김현희;김영석;정종만;정순용
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.321-326
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    • 1998
  • Electrical breakdown characteristics of liquid nitrogen($LN_2$) taking into consideration for application of high $T_c$ superconductor is very important. Also $LN_2$ will be used as both coolant and insulator in superconducting generator. In this paper, we investigated ac breakdown characteristics of cryogenic nitrogen gas above a $LN_2$ for rod-to plane electrode configuration. As result the breakdown mechanism of $LN_2$is dependence on bubble effect. And breakdown voltage is a ratio on bubble s size but electrodes arrangement is to make no difference. The breakdown voltage decreases slightly with increasing flow velocity, it again decreases abruptly with increasing flow velocity. These results were interpreted as the within pressure of rod electrode and Maxwell force.

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EMTP를 이용한 아크 사고의 모의 (Simulation of Fault-Arc using EMTP)

  • 변성현;최해술;채종병;김철환;한경남;김일동;김영한
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 B
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    • pp.850-852
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    • 1996
  • High impedance fault (HIF) is defined as fault that general overcurrent relay can't detect or interrupt, Especially when HIF occur under 15 kV, energized high voltage conductor results in fire hazard, equipment damage or personal threat. Because most HIF occur arc, HIF detection using arc is to increase. Numerical arc model can be applied in an electromagnetic transients program (EMTP) to reproduce the dynamic and random characteristic of arcs for any insulator arrangement, current and system voltage. It allows the representation of any network configuration to be investigated, so the digital simulation of arc faults through air can be substitute for demanding power arc test.

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