• Journal of the Korea Society of Computer and Information
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• v.15 no.3
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• pp.1-10
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• 2010

As processor platforms are continuously moving toward wireless mobile systems, embedded mobile processors are expected to perform more and more powerful, and therefore the development of an efficient power management algorithm for these battery-operated mobile and handheld systems has become a critical challenge. It is well known that a memory system is a main performance limiter in the processor point of view. Although many DVFS studies have been considered for the efficient utilization of limited battery resources, recent works do not explicitly show the interaction between the processor and the memory. In this research, to properly reflect short/long-term memory access patterns of the embedded workloads in wireless mobile processors, we propose a memory buffer utilization as a new index of DVFS level prediction. The simulation results show that our solution provides 5.86% energy saving compared to the existing DVFS policy in case of memory intensive applications, and it provides 3.60% energy saving on average.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.7
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• pp.454-461
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• 2007

Portable embedded systems have recently become smaller in size and offer a variety of junctions for users. These systems require high performance processors to handle the many functions and also a small battery to fit inside the system. However, due to its size, the battery life has become a major issue. It is important to have both efficient power design and management for each function, while optimizing processor voltage and clock frequency in order to extend the battery life of the system. In this paper, we calculated the efficiency of power in optimizing power rail. This system has two microprocessors. One is used to play music and movie files while the other is for DMB. In order to reduce power consumption, the DMB microprocessor is turned of while music or videos are played. Lastly, DVFS is applied to the processor in the system to reduce power consumption. Experimental results of the implemented system have resulted in reduced power consumption.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.27-38
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• 2016

This work proposes a 12b 30MS/s 0.18um CMOS SAR ADC based on low-power composite switching with an active die area of $0.16mm^2$. The proposed composite switching employs the conventional $V_{CM}$-based switching and monotonic switching sequences while minimizing the switching power consumption of a DAC and the dynamic offset to constrain a linearity of the SAR ADC. Two equally-divided capacitors topology and the reference scaling are employed to implement the $V_{CM}$-based switching effectively and match an input signal range with a reference voltage range in the proposed C-R hybrid DAC. The techniques also simplify the overall circuits and reduce the total number of unit capacitors up to 64 in the fully differential version of the prototype 12b ADC. Meanwhile, the SAR logic block of the proposed SAR ADC employs a simple latch-type register rather than a D flip-flop-based register not only to improve the speed and stability of the SAR operation but also to reduce the area and power consumption by driving reference switches in the DAC directly without any decoder. The measured DNL and INL of the prototype ADC in a 0.18um CMOS are within 0.85LSB and 2.53LSB, respectively. The ADC shows a maximum SNDR of a 59.33dB and a maximum SFDR of 69.83dB at 30MS/s. The ADC consumes 2.25mW at a 1.8V supply voltage.

• Journal of IKEEE
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• v.27 no.4
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• pp.644-649
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• 2023

As the cell spacing decreases during the scaling process of DRAM(Dynamic Random Access Memory), the reduction in STI(Shallow Trench Isolation) thickness leads to an increase in sub-threshold leakage due to the passing word line effect. The increase in sub-threshold leakage current caused by the voltage applied to adjacent passing word lines affects the data retention time and increases the number of refresh operations, thereby contributing to higher power consumption in DRAM. In this paper, we identify the causes of the passing word line effect through TCAD Simulation. As a result, we confirm the DRAM operational conditions under which the passing word line effect occurs, and observe that this effect alters the proportion of the total leakage current attributable to different causes. Through this, we recognize the necessity to consider not only leakage currents due to GIDL(Gate Induced Drain Leakage) but also sub-threshold leakage currents, providing guidance for improving DRAM structure.