• Title/Summary/Keyword: Dual structure

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Development of Dual Band Directional Coupler Applying Multi-layer Structure (다층 구조를 적용한 Dual band 방향성 결합기 개발에 관한 연구)

  • Yoo Myong Jae;Yoo Joshua;Park Seong Dae;Lee Woo S.;Kang Nam K.
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.43-47
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    • 2004
  • A coupler or divider is a microwave passive component used for power coupling or dividing. Regarding the trend of current telecommunication systems monolithic integration of passive components is highly desirable. In this study by the LTCC(Low temperature co-fired ceramics) technology a 2012 size type dual band coupler with multi-layer structure was fabricated. To achieve the desired coupling values for both DCS and EGSM bands, broad side coupled patterns were used with multi-layer structure. Its characteristics such as coupling, insertion loss, isolation and directivity values were measured and compared with simulation results.

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Threshold Voltage control of Pentacene Thin-Film Transistor with Dual-Gate Structure

  • Koo, Jae-Bon;Ku, Chan-Hoe;Lim, Sang-Chul;Lee, Jung-Hun;Kim, Seong-Hyun;Lim, Jung-Wook;Yun, Sun-Jin;Yang, Yong-Suk;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1103-1106
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    • 2006
  • We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

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Research on PAE of Doherty Amplifier Using Dual Bias Control and PBG Structure (이중 바이어스 조절과 PBG를 이용한 도허티 증폭기 전력 효율 개선에 관한 연구)

  • Kim Hyoung-Jun;Seo Chul-Hun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.8 s.111
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    • pp.707-712
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    • 2006
  • In this paper, dual bias control circuit and PBG(Photonic BandGap) structure have been employed to improve PAE(Power Added Effciency) of the Doherty amplifier on Input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal and PBG structure has been employed on the output port of Doherty amplifier. The proposed Doherty amplifier using dual bias controlled circuit and PBG has been improved the average PAE by 8%, $IMD_3$ by -5 dBc. And proposed Doherty amplifier has a high efficiency more than 30% on overall input power level, respectively.

An Experimental Study of Supersonic Dual Coaxial Free Jet

  • Baek, Seung-Cheol;Kwon, Soon-Bum;Lee, Byeong-Eun
    • Journal of Mechanical Science and Technology
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    • v.17 no.12
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    • pp.2107-2115
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    • 2003
  • A supersonic dual coaxial jet has been employed popularly for various industrial purposes, such as gasdynamic laser, supersonic ejector, noise control and enhancement of mixing. Detailed characteristics of supersonic dual coaxial jets issuing from an inner supersonic nozzle and outer sonic nozzles with various ejection angles are experimentally investigated. Three important parameters, such as pressure ratios of the inner and outer nozzles, and outer nozzle ejection angle, are chosen for a better understanding of jet structures in the present study. The results obtained from the present experimental study show that the Mach disk diameter becomes smaller, and the Mach disk moves toward the nozzle exit, and the length of the first shock cell decreases with the pressure ratio of the outer nozzle. It was also found that the highly underexpanded outer jet produces a new oblique shock wave, which makes jet structure much more complicated. On the other hand the outer jet ejection angle affects the structure of the inner jet structure less than the pressure ratio of the outer nozzle, relatively.

Analysis of the electrical characteristics of SOI LIGBT with dual-epi layer (이중 에피층을 가지는 SOI LIGBT의 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;Kim, Ki-Hyun;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.288-291
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    • 2004
  • Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with $T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is $800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is $700A/cm^2$ and 55V.

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RadioCycle: Deep Dual Learning based Radio Map Estimation

  • Zheng, Yi;Zhang, Tianqian;Liao, Cunyi;Wang, Ji;Liu, Shouyin
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.16 no.11
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    • pp.3780-3797
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    • 2022
  • The estimation of radio map (RM) is a fundamental and critical task for the network planning and optimization performance of mobile communication. In this paper, a RM estimation method is proposed based on a deep dual learning structure. This method can simultaneously and accurately reconstruct the urban building map (UBM) and estimate the RM of the whole cell by only part of the measured reference signal receiving power (RSRP). Our proposed method implements UBM reconstruction task and RM estimation task by constructing a dual U-Net-based structure, which is named RadioCycle. RadioCycle jointly trains two symmetric generators of the dual structure. Further, to solve the problem of interference negative transfer in generators trained jointly for two different tasks, RadioCycle introduces a dynamic weighted averaging method to dynamically balance the learning rate of these two generators in the joint training. Eventually, the experiments demonstrate that on the UBM reconstruction task, RadioCycle achieves an F1 score of 0.950, and on the RM estimation task, RadioCycle achieves a root mean square error of 0.069. Therefore, RadioCycle can estimate both the RM and the UBM in a cell with measured RSRP for only 20% of the whole cell.

A Study on Design and Manufacturing Methods of Dual-Polarization Monopulse Feed Structure in Millimeter-wave(W band) (밀리미터파(W대역) 이중편파 모노펄스 급전 구조 설계 및 제작 방안 연구)

  • Jong-Gyun Baek;Hyeong-Ki Lee;Young-Wan Kim;Hee-Duck Chae;Ji-Han Joo;Jaesik Kim
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.6
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    • pp.47-53
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    • 2023
  • In this paper, We designed a waveguide-type feed structure that converts millimeter wave dual-polarized signals into monopulse signals and presented a manufacturing method. At millimeter-wave such as the W band, the size of the waveguide is very small, making it very difficult to manufacture complex structures. Therefore, because manufacturability is important for the waveguide-type feed structure in the millimeter-wave, electro forming and diffusion bonding were proposed and verified in this study. The designed monopulse feed structure consists of eight 180° hybrids that combine 90° hybrids and self-compensating phase shifters, and four OMTs to separate dual polarization. The designed feed structure was designed to facilitate electro forming and diffusion bonding, and the manufactured feed structure was verified through a network analyzer. It was confirmed that the two proposed production methods produce a monopulse signal well through the measured magnitude and phase of the port.

Complex nested U-Net-based speech enhancement model using a dual-branch decoder (이중 분기 디코더를 사용하는 복소 중첩 U-Net 기반 음성 향상 모델)

  • Seorim Hwang;Sung Wook Park;Youngcheol Park
    • The Journal of the Acoustical Society of Korea
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    • v.43 no.2
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    • pp.253-259
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    • 2024
  • This paper proposes a new speech enhancement model based on a complex nested U-Net with a dual-branch decoder. The proposed model consists of a complex nested U-Net to simultaneously estimate the magnitude and phase components of the speech signal, and the decoder has a dual-branch decoder structure that performs spectral mapping and time-frequency masking in each branch. At this time, compared to the single-branch decoder structure, the dual-branch decoder structure allows noise to be effectively removed while minimizing the loss of speech information. The experiment was conducted on the VoiceBank + DEMAND database, commonly used for speech enhancement model training, and was evaluated through various objective evaluation metrics. As a result of the experiment, the complex nested U-Net-based speech enhancement model using a dual-branch decoder increased the Perceptual Evaluation of Speech Quality (PESQ) score by about 0.13 compared to the baseline, and showed a higher objective evaluation score than recently proposed speech enhancement models.

MIC-TFT의 Single, Dual Gate의 전기적 특성

  • Kim, Jae-Won;Han, Jae-Seong;Choe, Byeong-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.135-135
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    • 2009
  • In this work we compared the electrical characteristic of single gate and dual gate in MIC-TFT. We fabricated p-channel TFTs based on MIC structure. In mobility, dual gate ($61.35cm^2/Vsec$) got a higher value than single gate ($55.96cm^2/Vsec$). In $I_{on}/I_{off}$ dual gate ($6.94{\times}10^6$) got a higher value than single gate ($1.72{\times}10^6$) too. In $I_{off}$, dual gate got a lower value than single gate. Therefore, dual gate is good and less power consumption than single gate.

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Dual-band Frequency Selective Surface Bandpass Filters in Terahertz Band

  • Qi, Limei;Li, Chao
    • Journal of the Optical Society of Korea
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    • v.19 no.6
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    • pp.673-678
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    • 2015
  • Terahertz dual-band frequency selective surface filters made by perforating two different rectangular holes in molybdenum have been designed, fabricated and measured. Physical mechanisms of the dual-band resonant responses are clarified by three differently configured filters and the electric field distribution diagrams. The design process is straightforward and simple according to the physical concept and some formulas. Due to the weak coupling between the two neighboring rectangle holes with different sizes in the unit cell, good dual-band frequency selectivity performance can be easily achieved both in the lower and higher bands by tuning dimensions of the two rectangular holes. Three samples are fabricated, and their dual-band characteristics have been demonstrated by a THz time-domain spectroscopy system. Different from most commonly used metal-dielectric structure or metal-dielectric-metal sandwiched filters, the designed dual-band filters have advantages of easy fabrication and low cost, the encouraging results afforded by these filters could find their applications in dual-band sensors, THz communication systems and other emerging THz technologies.