The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Research on PAE of Doherty Amplifier Using Dual Bias Control and PBG Structure

이중 바이어스 조절과 PBG를 이용한 도허티 증폭기 전력 효율 개선에 관한 연구

  • Kim Hyoung-Jun (Information and Tecommunication Engineering, Soongsil University) ;
  • Seo Chul-Hun (Information and Tecommunication Engineering, Soongsil University)
  • 김형준 (숭실대학교 정보통신 전자공학부) ;
  • 서철헌 (숭실대학교 정보통신 전자공학부)
  • Published : 2006.08.01
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Abstract

In this paper, dual bias control circuit and PBG(Photonic BandGap) structure have been employed to improve PAE(Power Added Effciency) of the Doherty amplifier on Input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal and PBG structure has been employed on the output port of Doherty amplifier. The proposed Doherty amplifier using dual bias controlled circuit and PBG has been improved the average PAE by 8%, $IMD_3$ by -5 dBc. And proposed Doherty amplifier has a high efficiency more than 30% on overall input power level, respectively.

본 논문에서는 이중 바이어스 조절과 PBG 구조를 이용하여 Doherty 증폭기의 효율을 개 선하였다. PBG 구조를 출력 정합 회로에 구현하였으며, 이중 바이어스 조절을 carrier amplifier에 적용하여 낮은 입력 레벨에서도 Doherty 증폭기의 효율을 개선할 수 있었다. 제안된 구조를 이용한 Doherty 증폭기는 기존의 전력 증폭기에 비해 PAE는 8%, $IMD_3$는 -5 dBc 개선하고, 모든 입력 전력 레벨에서 30% 이상의 고효율을 가질 수 있었다.

Keywords

References

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