• Korean Journal of Soil Science and Fertilizer
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• v.44 no.1
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• pp.8-14
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• 2011

The effect of flooding and soil salinity on the growth of yam (Dioscorea batatas) were studied on the experimantal site temporally established in the south-eastern part of Saemangeum Reclaimed Tidal Land (near Gwanghwal myun, Gimjae-gun, Jellabukdo, Korea). Yam seedlings planted by using aerial bulblet as alternative of sliced tubers, were grown for 20-days and transplanted in black-vinyl mulched ridges (about 20 cm in height) at 70cm interval by $20{\times}60cm$ spacing in the $4^{th}$ of May, 2010. Soil salinity was maintained at lower than 1.2 ds $m^{-1}$ during the growing period and did not result to salt injury in all plants. However, flooding injury very seriously led to plant death and plant mortality rates at $67{\pm}21$ and $82{\pm}9%$ of yam plants in the compost and no compost treatment, respectively, died by heavy flooding during the rainy summer season. The main reasons of the flooding injury included the decreased rainfall acceptable capacity (RAC) after the rising of water table and a slowdown of water infiltration rate after the formation of an impermeable soil crust in the furrow bottom with continuous and heavy downpour during the rainy summer season. The effect of compost treatment was not statistically observed because of the severe spatial difference caused by wet injury, although yam tuber yield was higher at 30 kg $10^{-1}$ in the compost treatment than in the no-compost treatment at 20 kg $10^{-1}$. However, the size of tuber ranged at 1.23 to 1.60 cm in diameter and 3.7 to 5.0 cm in length in all both treatment, which means they are still reproducible for the next cropping season. Conclusively, proper counter-flooding measure and soil salinity control critically important for successful yam production in Saemangeum Reclaimed Tidal Land.

• ETRI Journal
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• v.14 no.1
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• pp.40-51
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• 1992

$0.25{\mu} m$ 급 pMOSFET소자를 구현하기 위해, $P^+$ 폴리실리콘을 적용한 pMOS를 제작하였으며, $p^+$ 폴리실리콘 게이트 소자에서 심각하게 문제가 되고 있는 붕소이온 침투현상을 조사하고 붕소이온 침투가 일어나지 않는 최적열처리온도를 조사하였다. 소자제조 공정중 게이트 공정만 전자선 (EBML300)을 이용하여 직접묘사하고 그 이외의 공정은 stepper(gline) 을 사용하는 Mix & Match 방법을 사용하였다. 또한 붕소이온 침투현상을 억제하기 위한 한가지 예로서, 실리콘산화막과 실리콘질화막을 적층한 ONO(Oxide/Nitride/Oxide) 구조를 게이트 유전체로 적용한 소자를 제작하여 그 가능성을 조사하였다. 그 결과 $850^{\circ}C$의 온도와 $N_2$ 분위기에서 30분동안 열처리 하였을 경우, 붕소이온의 침투현상이 일어나지 않음을 SIMS(Secondary Ion Mass Spectrometer) 분석 및 C-V(Capacitance-Voltage) 측정으로 확인할 수 있었으며 그 이상의 온도에서는 붕소이온이 침투되어 flat band전압(Vfb)을 변화시킴을 알았다. 6nm의 얇은 게이트 산화막 및 $0.1{\mu} m$ 이하의 LDD(Lightly Doped Drain) $p^-$의 얇은 접합을 형성함으로써 소자의 채널길이가 $0.2 {\mu} m$까지 짧은 채널효과가 거의 없는 소자제작이 가능하였으며, 전류구동능력은 $0.26\muA$/$\mu$m(L=0.2$\mu$m, V$_DS$=2.5V)이었고, subthreshold 기울기는 89-85mV/dec.를 얻었다. 붕소이온의 침투현상을 억제하기 위한 한가지 방법으로 ONO 유전체를 소자에 적용한 결과, $900^{\circ}C$에서 30분의 열처리조건에서도 붕소이온 침투현상이 일어나지 않음으로 미루어 , $SiO_2$ 게이트 유전체보다 ONO 게이트 유전체가 boron 침투에 대해서 좋은 장벽 역활을 함을 알았다. ONO 게이트 유전체를 적용한 소자의 경우, subthreshold특성은 84mV/dec로서 좋은 turn on,off 특성을 얻었으나, ONO 게이트 유전체는 막자체의 누설전류와 실리콘과 유전체 계면의 고정전하량인 Qss의 양이 공정조건에 따라 변화가 심해서 문턱전압 조절이 어려워 소자적용시 문제가 된다. 최근 바닥 산화막(bottom oxide) 두께가 최적화된 ONO 게이트 유전체에 대하 연구가 활발히 진행됨을 미루어, 바닥 산화막 최적화가 된다면 더 좋은 결과가 예상된다.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.8
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• pp.4019-4023
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• 2016

Background: Colorectal cancer (CRC) or bowel cancer is one of the most important cancer diseases, needing serious attention. The cell surface receptor gene human epidermal growth factor receptor (EGFR) may have an important role in provoking CRC. In this pharmaceutical era, it is always attempted to identify plant-based drugs for cancer, which will have less side effects for human body, unlike the chemically synthesized marketed drugs having serious side effects. So, in this study the authors tried to assess the activity of two important plant compounds, ferulic acid (FA) and p-coumaric acid (pCA), on CRC. Materials and Methods: FA and pCA were tested for their cytotoxic effects on the human CRC cell line HCT 15 and also checked for the level of gene expression of EGFR by real time PCR analysis. Positive results were confirmed by in silico molecular docking studies using Discovery Studio (DS) 4.0. The drug parallel features of the same compounds were also assessed in silico. Results: Cytotoxicity experiments revealed that both the compounds were efficient in killing CRC cells on a controlled concentration basis. In addition, EGFR expression was down-regulated in the presence of the compounds. Docking studies unveiled that both the compounds were able to inhibit EGFR at its active site. Pharmacokinetic analysis of these compounds opened up their drug like behaviour. Conclusions: The findings of this study emphasize the importance of plant compounds for targeting diseases like CRC.

• Journal of the Earthquake Engineering Society of Korea
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• v.12 no.6
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• pp.13-23
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• 2008

In this study, a finite element (FE) model updating method based on the hybrid genetic algorithm (HGA) is proposed to improve the grillage FE model for plate girder bridges. HGA consists of a genetic algorithm (GA) and direct search method (DS) based on a modification of Nelder & Mead's simplex optimization method (NMS). Fitness functions based on natural frequencies, mode shapes, and static deflections making use of the measurements and analytical results are also presented to apply in the proposed method. In addition, a multi-objective function has been formulated as a linear combination of fitness functions in order to simultaneously improve both stiffness and mass. The applicability of the proposed method to girder bridge structures has been verified through a numerical example on a two-span continuous grillage FE model, as well as through an experimental test on a simply supported plate girder skew bridge. In addition, the effect of measuring error is considered as random noise, and its effect is investigated by numerical simulation. Through numerical and experimental verification, it has been proven that the proposed method is feasible and effective for FE model updating on plate girder bridges.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.51-55
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• 2007

This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFET is considered to be an alternate MOSFET structure for the deep sub-micron regime, having excellent device characteristics. As the channel length decreases, the study of subthreshold behavior of the device becomes critically important for successful design and implementation of digital circuits. An accurate analysis of subthreshold behavior of FinFET was done by simulating the device in a 3D process and device simulator, Taurus. The subthreshold behavior of FinFET, was measured using a parameter called S-factor which was obtained from the $In(I_{DS})\;-\;V_{GS}$ characteristics. The value of S-factor of devices of various fin dimensions with channel length $L_g$ in the range of 20 nm - 50 nm and with the fin width $T_{fin}$ in the range of 10 nm - 40 nm was calculated. It was observed that for devices with longer channel lengths, the value of S-factor was close to the ideal value of 60 m V/dec. The S-factor increases exponentially for channel lengths, $L_g\;<\;1.5\;T_{fin}$. Further, for a constant $L_g$, the S factor was observed to increase with $T_{fin}$. An empirical relationship between S, $L_g$ and $T_{fin}$ was developed based on the simulation results, which could be used as a rule of thumb for determining the S-factor of devices.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.35-39
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• 2020

Nonwet (Head in Pillow) defect is one of the defects in SMT (surface mount technology) process, the defect is caused by several factors, such as solder paste misalignment, reflow condition, package warpage and package ball size. This paper focused on ① reflow condition ② package ball & solder paste misalignment ③ package ball size for nonwet experiment. The first, on the case of reflow condition, there would be high risk of nonwet defect when the soldering time was increased, but N₂ was adopted to reflow process, there could be no or low risk of nonwet defect because of oxidation barrier control. And when the contact depth between Solder ball and solder paste was below 20 ㎛, there could be high risk of nonwet defect. Also smaller package ball would have low risk of nonwet defect.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.183-191
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• 2010

In the recent digital communication systems, the performance of Turbo Code used as the error correction coding method depends on the interleaver size influencing the free distance determination and the iterative decoding algorithms of the turbo decoder. However, some iterations are needed to get a better performance, but these processes require a large time delay. Recently methods of reducing the number of iteration have been studied without degrading original performance. In this paper, the new method of combining ME (Mean Estimate) stopping criterion with SDR (sign difference ratio) stopping criterion among previous stopping criteria is proposed, and the fact of compensating each method's missed detection is verified. Faster decoding is realized that about 1~2 time iterations to reduced through adopting this method into serially concatenated both decoders. System Environments were assumed W-CDMA forward link system with intense MAI (multiple access interference).

• Proceedings of the Korea Association of Information Systems Conference
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• 2001.12a
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• pp.166-178
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• 2001

Lately the National Technology Standard of IMT-2000 service in Korea was decided for both technology standards (cdma-2000, W-CDMA), and consequently the comprehensive countermeasures against the Technology Standards are all the more emphasized. Especially to private enterprises which were selected as service carriers for IMT-2000 service in Korea, making corresponding strategies in relation to both technology standards must be settled without delay. The Government also should serve the development of the I&T Industry through the various processes of adopting the policies and working out strategies In relation to Technology Standards of IMT-2000. Therefore in this paper, 1 would like to survey the features of both Technology Standards(cdma-2000, W-CDMA) and to propose the hereafter corresponding strategies in relation to IMT-2000 services.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.16 no.5
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• pp.152-161
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• 2017

The CBTC(Communication based Train Control) system employed on 2.4GHz ISM band adopt the IEEE802.11.x standard. Therefor communication time delay, distortion and data losses will be produced. To overcome these problems, CPSK(Continuous Phase shift keying) modulated DS/SS(Direct Sequence Spread Spectrum) transmitter with 908MHz carrier frequency is proposed. Through the eye diagram and scatter diagram the performance is analysed. And the phase noise characteristic of the local oscillator is measured about 60dBc/Hz, this means that the phase noise performance is very good compared to the signal. Reference frequency suppression of the 2nd local oscillator is 50dB below compared to the signal. Through the polarities of the complementary signal equally probable, the line spectrum of the output spectrum is eliminated. The nonlinear effects which introduce the spectral spreading or spectral regeneration is reduced remarkably.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.399-405
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• 1996

The present buried contact (BC) solar cell research at SAIT includes the development of a processing sequence suitable for production of the single sided (SS) BC solar cells. This paper presents some results for large area ($45cm^{2}$) SSBC cells fabricated on FZ and CZ silicon substrates. Cell efficiencies in excess of 18% fabricated on FZ, p-type, 0.5 ohm-cm, and over 16% on CZ p-type, 10~20 ohm-cm, wafers have been demonstrated. Both the FZ and CZ wafers were chemically textured. These results are preliminary and the exploration of double sided (DS) sequence, which is the future BC structure would lead to over 17% and 20% efficiency cells on CZ and FZ substrates respectively. The cost of solar cells can be reduced further if the many high temperature steps can be reduced to only one. This would be very advantageous to very poor quality substrates such as the CZ grown wafers.