• Title/Summary/Keyword: Drain material

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Schottky barrier overlapping in short channel SB-MOSFETs (Short Channel SB-FETs의 Schottky 장벽 Overlapping)

  • Choi, Chang-Yong;Cho, Won-Ju;Chung, Hong-Bay;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.133-133
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    • 2008
  • Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

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Efficacy of a 14Fr Blake Drain for Pleural Drainage Following Video-Assisted Thoracic Surgery (비디오 흉강경 수술에 적용된 14Fr Blake Drain의 효능 분석)

  • Choi, Jinwook;Choi, Ho;Lee, Sungsoo;Moon, Jonghwan;Kim, Jongseok;Chung, Sangho;An, Hyoungwook
    • Journal of Chest Surgery
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    • v.42 no.1
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    • pp.59-62
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    • 2009
  • Background: Pleural drainage following video-assisted thoracic surgery has traditionally been achieved with largebore, semi-rigid chest tubes. Recent trends in thoracic surgery have been toward less invasive approaches for a variety of diseases. The purpose of this study was to evaluate the safety and efficacy of drainage by means of small, soft, and flexible 14Fr Blake drains. Material and Method: Between December 2007 and March 2008, 14Fr silastic Blake drains were used for drainage of the pleural cavity in 37 patients who underwent a variety of video-assisted thoracic surgical procedures at our institution. Result: The average postoperative length of hospital stay was 3.26 days (range, 2~12 days), Blake drains were left in the pleural space for an average of 3.15 days (range, 1~7 days), and the average amount of drainage was 43.8 ml/day. The maximal amount of blood removed daily by a Brake drain was as much as 290 mL. There were no drain-related complications. Blake drains seemed to cause less pain while in place, and particularly at the time of removal. Conclusion: The use of a Blake drain following minor thoracic surgery appeared to be safe and effective in drainage of fluid or air in the pleural space, and were associated with minimal discomfort.

Application of Precious Slag Ball for horizontal drain material by field experimental test (현장시험을 통한 수평배수재로서의 풍쇄 슬래그의 적용성에 관한 연구)

  • Shin, Eun-Chul;Lee, Woon-Hyun;Kim, Soo-Wan;Yoo, Jeong-Hoon
    • Proceedings of the Korean Geotechical Society Conference
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    • 2009.09a
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    • pp.449-456
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    • 2009
  • As soft grounds have complex engineering properties that the load bearing capacity is low and high compressibility, it needs to solve this problems prior to structures are constructed by the method of improvement of soft ground. Generally, the sand mat is used to as a horizontal drain material and loading base for soft ground improvement work. However, as the natural environment can be damaged by sand pickings of large quantity and the volume which is enormous and an amount of demanded sand is increased, it is state of short in supply. This paper presents the result of field experimental test to use Precious Slag Ball to solve these issues instead of sand mat as the replacing material. This study evaluated the performance of Precious Slag Ball as a sand mat in terms of discharge capacity, settlement, and settlement through the K-Embank program.

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Poly-Si(SPC) NVM for mult-function display (디스플레이 다기능성 구현을 위한 Poly-Si(SPC) NVM)

  • Heo, Jong-Kyu;Cho, Jae-Hyun;Han, Kyu-Min;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.199-199
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    • 2008
  • 이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

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Development and Applicability of Discharge Capacity Testing Apparatus Using Penetration Method (관입식 복합 통수능 시험기의 개발과 적용성)

  • Yoo, Nam Jae;Kim, Dong Gun;Park, Byung Soo;Jun, Sang Hyun
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.28 no.5C
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    • pp.313-320
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    • 2008
  • The discharge capacity testing apparatus using penetration method, being able to simulate in laboratory the condition of embedding plastic board drains in field, was developed to investigate consolidation characteristics of ground and to figure out discharge capacity of drains. The developed apparatus with a mandrel and penetrating device was designed to insert PBD into the ground prepared by previously applied pressure, being different from the conventional testing method that the drain was installed and the ground material was poured subsequently. Discharge capacity tests with the conventional apparatus as well as the newly developed one were performed to assess the applicability of the latter. As a result of tests, the conventional method showed delayed consolidation due to overall disturbance of ground and local deformation of drain caused by inhomogeneity of ground. Therefore discharge capacity of drain with the conventional apparatus was measured more or less larger than the expected values whereas discharge capacity with new one could be measured similar to the actual value in field.

High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Adsorption Characteristics Evaluation of Natural Zeolite for Heavy-metal Contaminated Material Remediation (중금속 오염물질 정화를 위한 천연제올라이트의 흡착특성)

  • Shin, Eun-Chul;Park, Jeong-Jun;Jeong, Cheol-Gyu;Kim, Sung-Hwan
    • Journal of the Korean Geosynthetics Society
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    • v.13 no.2
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    • pp.59-67
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    • 2014
  • The amount of the contaminants that can be adsorbed on the drain was evaluated for the effective remediation of the contaminated soil, and the contaminants adsorptivity of the drain was evaluated by comparing the isothermal adsorption model after carrying out the contaminants adsorption test of the reactants coated on the surface of the drain. The reactant used in the experiment is a natural zeolite, and the contaminants are copper, lead and cadmium. The results that Freundlich and Langmuir adsorption isotherm model are compared to the adsorption amount according to the change of the initial concentration by the contaminants. As a result of the component analysis, because Si, Al and O are contained approximately 28%, 11% and 48%, respectively, it is identified that the material coated on the surface of the drain is the component of the zeolite which is the reactant for the adsorption of the heavy-metal (Cu, Pb, Cd) contaminants. The heavy-metal adsorption kinetic of the zeolite which is the reactant was decreased in order of lead, copper and cadmium. The important factor of the performance evaluation of the adsorbent is the reaction rate, and if zeolite is used as the reactant in the relationship between the maximum amount of adsorption and reaction rate, it can be utilized as the design factor that determine the removal order of the complex heavy-metal. In other words, because the maximum adsorption quantity of lead is smaller compared to copper but the reaction rate is relatively fast, it can be primarily removed, and copper can be removed after removing the lead. It was analyzed that Cadmium can be finally removed after that other heavy-metal is removed.

Photoresponsive Characteristics of N-channel Pseudomorphic HEMT and MESFET Under Optical Stimulation for Possible Applications to Millimeter-Wave Photonics

  • 김동명;김희종;이정일;이유종
    • Electrical & Electronic Materials
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    • v.12 no.8
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    • pp.39-45
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    • 1999
  • Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

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Device Optimization of N-Channel MOSFETs with Lateral Asymmetric Channel Doping Profiles

  • Baek, Ki-Ju;Kim, Jun-Kyu;Kim, Yeong-Seuk;Na, Kee-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.15-19
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    • 2010
  • In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

A Study on the Characteristics of Pressure Drainage for Geotextiles by Laboratory Model Tests (모형실험에 의한 지오텍스타일의 압력배수 특성 연구)

  • 이상호;권무남
    • Geotechnical Engineering
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    • v.12 no.5
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    • pp.89-102
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    • 1996
  • In order to investigate the characteristics of pressure drainage for geotextile, small-scale model tests were carried out for the horizontal and vertical geotextile drain to accelerate consolidation of foundation under embankment for the purpose of foundation reinforcement. According to the result of this study, the accumulative drainage discharge is found to increase as compressive stress of geotextile increases with logarithmic function. The drainage discharge under each step of compressive stress linearly increases with the increase of hydraulic head and its increasing rate is smaller when the compressive stress is higher. The drainage discharge shows to be greater when the number of geoteztile layers is more and the foundation material is finer. The relationship between transmissivity of geogextile and drainage discharge has positive correlation and the rate of increase is appeared to be the same regardless of foundation material and hydraulic head. And it proves that the drainage capacity of geotextile drain is determined by the transmissivity of geoteztile.

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