• Title/Summary/Keyword: Double-side-cleaving technique

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Fluxon resonance steps in the $Bi_2Sr_2CaCu_2O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.138-142
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    • 2007
  • We observed discrete fluxon-flow resonance steps in high magnetic fields in a stack of Josephson junctions with lateral size of $1.5{\times}17{\mu}m^2$. The measurement sample was prepared by sandwiching a stack of $Bi_2Sr_2CaCu_2O_{8+x}$ intrinsic Josephson junctions between two Au electrodes by using the double-side-cleaving technique. This technique allowed us to isolate the intrinsic Josephson junction structures from the inductive interference of the basal stack. The resonance steps observed are in good agreement with the collective Josephson fluxon dynamics that are in resonance with the plasma oscillation modes inside the stacked Josephson junctions.

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Quantitative identification of the fluxon-flow modes in a stack of intrinsic Josephson junctions of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.9-12
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    • 2003
  • We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

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Dynamical transition of Josephson vortex lattice in serially stacked ${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$ intrinsic Josephson junctions

  • Myung-Ho;Hu-Jong
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.52-55
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    • 2004
  • The inductive coupling theory in serially stacked $Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ intrinsic Josephson junctions predicts that the lattice structure of the Josephson vortices along the c axis gradually changes from the triangular to the rectangular lattice with increasing the vortex velocity. This lattice transition appears as voltage jumps or sub-branch splitting in the Josephson vortex-flow region of current-voltage characteristics (IVC). We report the IVC in external magnetic fields from 2 to 4 T. The stack, with the lateral size of 1.4${\times}$15 $u\m^2$, was fabricated by using the double-side cleaving technique. The sub-branches in the Josephson vortex-flow region, corresponding to a plasma propagation mode in serially coupled intrinsic Josephson junctions, were also observed in the range of 2∼4T. Switching from one branch to another in Josephson vortex-flow region suggests the structural transition of the moving Josephson vortex lattice.

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The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD (MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작)

  • Kim, Chung-Jin;Kang, Myung-Ku;Kim, Yong;Eom, Kyung-Sook;Min, Suk-Ki;Oh, Hwan-Sool
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.36-45
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    • 1992
  • The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

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