• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.184-188
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• 2016

Highly ordered $SnO_2$ and NiO nanocolumns have been successfully achieved by glancing-angle deposition (GLAD) using an electron beam evaporator. Nanocolumnar $SnO_2$ and NiO sensors exhibited high performance owing to the porous nanostructural effect with the formation of a double Schottky junction and high surface-to-volume ratios. When all gas sensors were exposed to various gases such as $C_2H_5OH$, $C_6H_6$, and $CH_3COCH_3$, the response of the highly ordered $SnO_2$ nanocolumn were over 50 times higher than that of the $SnO_2$ thin film. This work will bring broad interest and create a strong impact in many different fields owing to its particularly simple and reliable fabrication process.

• Progress in Superconductivity
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• v.11 no.2
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• pp.96-99
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• 2010

We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Journal of Mechanical Science and Technology
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• v.14 no.7
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• pp.752-763
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• 2000

The stress field around the dynamically propagating interface crack tip under a remote mixed mode loading condition has been studied with the aid of dynamic photoelastic method. The variation of stress field around the dynamic interface crack tip is photographed by using the Cranz-Shardin type camera having $10^6$ fps rate. The dynamically propagating crack velocities and the shapes of isochromatic fringe loops are characterized for varying mixed load conditions in double cantilever beam (DCB) specimens. The dynamic interface crack tip complex stress intensity factors, $K_1\;and\;K_2$, determined by a hybrid-experimental method are found to increase as the load mixture ratio of y/x (vertical/horizontal) values. Furthermore, it is found that the dynamically propagating interface crack velocities are highly dependent upon the varying mixed mode loading conditions and that the velocities are significantly small compared to those under the mode I impact loading conditions obtained by Shukla (Singh & Shukla, 1996a, b) and Rosakis (Rosakis et al., 1998) in the USA.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.5
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• pp.474-481
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• 2009

Fracture models and criteria of adhesive with two parameters, namely $G_C$ and ${\sigma}_{max}$, have been developed to describe the fracture process of adhesive joints. Cohesive zone model(CZM) is a representative two parameter failure criteria approach. In CZM, ${\sigma}_{max}$ is a critical, limiting maximum value of the stress in the damage zone ahead of the crack and is assumed to have some physical significance in adhesive failure. Based on CZM and finite element analysis method, the relationship between fracture load and adhesive properties, as $G_{IC)$ and $({\sigma}_{max})_I$, was investigated in adhesively bonded joint tensile test and T-peel test. The two parameters in tensile mode loading were evaluated by using the relationship. The value of $G_{\IC}$ evaluated by proposed method showed close agreement with analytical solution for tapered double cantilever beam(TDCB) test which proposed in an ASTM standard.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.228.2-228.2
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• 2014

Characteristics of high Fermi velocity, high mechanical strength, and transparency offer tremendous advantages for using graphene as a promising transparent conducting material [1] in electronic devices. Although graphene is a prospective candidate for touch sensor with strong mechanical properties [2] and flexibility, only few investigations have been carried out in the field of sensor as a device form. In this study, we suggest ultra-highly sensitive and transparent graphene touch sensor fabricated by single layer graphenes. One of the graphene layers is formed in the top panel as a disconnected graphene beam transferred on PDMS, and the other of the graphene layer is formed with line-patterning on the bottom panel of triple structure PET/PI/SiO2. The touch sensor shows characteristics of flexible. Its transmittance is approximately 75% where transmittance of the top panel and the bottom panel are 86.3% and 87%, respectively, at 550 nm wavelength. Sheet resistance of each graphene layer is estimated as low as $971{\Omega}/sq$. The results show that the conductance change rate (${\Delta}C/C0$) is $8{\times}105$ which depicts ultra-high sensitivity. Moreover, reliability characteristic confirms consistent behavior up to a 100-cycle test.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.781-787
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• 1996

Silicom oxide films with good water repellency were prepared by rf plasma-enhanced CVD (rf-PECVD) using four kinds of organosilicon compound, which had different number of methyl ($CH_3$) groups, and oxygen as gas sources. The differences in the deposition rates, film composition and film properties were studied in detail. Water repellency depended on the number of $CH_3$ groups in the organosilicon compounds and the partial pressure of oxygen in the plasma. The highest contact angle for water drops, about 95 degrees, was obtained when trimethy lmethoxy silane (TMMOS) was used. The contact angle decreased with the amount of oxygen gas introduced into the plasma. The dissociation of $CH_3$ groups by adding oxygen was comfirmed by Fourier transform infrared spectroscopy(FTIR) and X-ray photoelectron spectroscopy (XPS). The optical properties were estimated by double-beam spectroscopy and ellipsometry. The transmittance of the glass plate coated by the film prepared with tetramethoxy silane (TMOS) was about 90% and the refractive index of film was 1.44. This value was smaller than the refractive index of a glass plate(soda lime glass, refractive index is 1.515) and this film played a role of anti-refractive coating.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.647-657
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• 1999

Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

• Journal of the Optical Society of Korea
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• v.10 no.1
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• pp.16-22
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• 2006

Wavefront sensing using a Shack-Hartmann sensor has been widely used for estimating wavefront errors or distortions. The sensor combines the local slopes, which are estimated from the centroids of each lenslet image, to give the overall wavefront reconstruction. It was previously shown that the pupil-plane irradiance profile effects the centroid estimation. Furthermore, a previous study reported that the reconstructed wavefront from a planar wavefront with a Gaussian pupil irradiance profile contains large focus and spherical aberration terms when there is a focus error. However, it has not been reported yet how seriously the pupil irradiance profiles, which can occur in practical applications, effect the sensing errors. This paper considered two cases when the irradiance profiles are not uniform: 1) when the light source is Gaussian and 2) when there is a partial interference due to a double reflection by a beam splitting element. The images formed by a Shack-Hartmann sensor were simulated through fast Fourier transform and were then supposed to be detected by a noiseless CCD camera. The simulations found that sensing errors, due to the Gaussian irradiance profile and the partial interference, were found to be smaller than RMS ${\lambda}/50$ when ${\lambda}$ is $0.6328\;{\mu}m$, which can be ignored in most practical cases where the reference and test beams have the same irradiance profiles.

• Current Optics and Photonics
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• v.4 no.3
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• pp.238-246
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• 2020

The heat distribution in crystals in a 2-㎛ acousto-optic Q-switched Tm:LuAG laser pumped by pulsed-laser-diode (pulsed-LD) intermittent-pumping technology was analyzed using COMSOL software. The thermal lensing effect of the Tm:LuAG crystal can be mitigated by pulsed-LD intermittent-pumping techniques. An experimental setup using this kind of approach achieved maximum output energy of 8.31 mJ, minimum pulse width of 101.9 ns, and highest peak power of 81.55 kW, reached at a Q-switched repetition rate of 200 Hz. It offers significant improvement of performance of the output laser beam, compared to pulsed-LD double-ended pumping technology at the same repetition rate.