• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.457-458
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• 2006

Transparent metal cathodes using Ca/Ag, Ba/Ag double layers have been fabricated to investigate its optical transmission. The transmission spectra show that Ca/Ag and Ba/Ag double layers result in higher transmittance compared to Ag single layer. The Ba/Ag double layer shows over 80% transmittance at 400 nm and 70% at 700 nm. The electroluminescence efficiency of fluorescent TEOLED using Ba/Ag transparent metal cathode was 10 ~ 15 cd/A.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.173-176
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• 2009

We suggest a new protective layer for PDP consists of SrO and MgO double layer. This double layer structure protects SrO layer from the contamination by $H_2O$ or $CO_2$ in the air and enable SrO to play as the main cathode material. It was confirmed that the high secondary electron emission characteristics of SrO by Xe ion can bring considerable driving voltage reduction and improvement of luminance and luminous efficacy in PDP.

• Journal of Information Display
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• v.10 no.3
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• pp.107-110
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• 2009

Efficient deep-blue organic light-emitting diodes were demonstrated using 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl doped in double-emission layers (D-EMLs). The D-EML system, which consists of 2-methyl-9,10-di(2-naphthyl)anthracene and 1,4-(dinaphthalen-2-yl)-naphthalene as blue hosts, was employed to broaden the recombination zone and to ensure the good confinement of the holes and electrons. The optimized device showed a peak current efficiency of 4.47 cd/A, a peak external quantum efficiency of 4.09%, and Commission Internationale de L'Eclairage coordinates of (0.16, 0.10).

• Journal of the Korean Chemical Society
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• v.43 no.3
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• pp.315-320
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• 1999

Novel electroluminescent materials, polymer material, PU-BCN and low molar mass material, D-BCN with the same chromophores were designed and synthesized. A molecular structure of chromophore was composed of bisstyrylbenzene derivative with cyano groups as electron injection and transport and phenylamine groups as hole injection and transport. Device structures with PU-BCN and D-BCN as an emission layer were fa-bricated, which were a single-layer device(SL), Indium-tin oxide(ITO)/emission layer/MgAg, and two kinds of double-layer devices which were composed of ITO/emission layer/oxadiazole derivative/MgAg as a DL-E device and ITO/triphenylamine derivative/emission layer/MgAg as a DL-H device. The two emission materials, PU-BCN and D-BCN with the same emission-chromophore were evaluated as having excellent performance of charge injection and transport and revealed almost the same emission characteristics in high current density. EL emission maximum peaks of two material were detected at about 640 nm wavelength of red emission region.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.990-993
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• 2006

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode shows high transmittance over 70% in visible range. And the device with a Ba-Ag has a low turn on voltage and good electrical properties.

• Journal of the Korean Applied Science and Technology
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• v.16 no.2
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• pp.127-133
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• 1999

New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.163-166
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• 1997

Electroluminescent(EL) dcvice based on organic thin layers have attracted lots of interests because of thier possible application as large-area light-emitting displays. It was known that MEH-PPV and 1, 1, 4, 4, -Tetraphenyl-1, 3-butadiene(TPB) has red and blue emission peak at 580nm and 480nm, respectively. In this study, MEH-PPV films and TPB films were prepared by spin coating and vacuum deposition method, respectively. Films of MEH-PPV and TPB double layer were also prepared by the same method. Photoluminescent(PL) characteristics of these single and doubler layers were investigated, where a cell structure of glass substrate/ITO/MEH-PPV and/or TPB/Al was employed. It was found that the photoluminescent efficiency of TPB film was higher than that of MEH-PPV film with a single layer and also with a double structure. These films have also different I-V characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.69-72
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• 2020

In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO₂ NPs is lower than SnO₂ NPs. Therefore, it is expected that inserting TiO₂ NPs between the SnO₂ layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO₂ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly[2-(2'-ethylhexyloxy )-5-methoxy-1,4-pheny lenevinylene])/Al(aluminium) and ITO/MEH-PPV/$Alq_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that turn on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness $200\AA$ of $Alq_3$ is shown electrical properties that turn on voltage is about 11 V, and current density decreases as a function of increasing temperature.ࠀȀ 耀Ѐ€