• Title/Summary/Keyword: Dot-Matrix

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Homogeneous Mixing of Si3N4 with Sintering Additives by Coprecipitation Method (질화규소의 소결첨가제의 공침법에 의한 균일혼합)

  • 김지순
    • Journal of the Korean Ceramic Society
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    • v.30 no.10
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    • pp.829-837
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    • 1993
  • Chemically and geometrically homogeneous mixing of Si3N4 powders with sintering additives(YAG, 3Y2O3$.$5Al2O3) was attempted via coprecipitation method. X-ray dot maps for the additive elements(Al and Y) showed that the additives are evenly distributed in the powder mixture prepared by coprecipitation method(CP). TEM observation of the coprecipittion-treated Si3N4 powders revealed that they are covered with extremely fine crystallites of additive. The shift in isoelectric point(IEP) of Si3N4 powders from pH 6.7 to pH 7.9 after coprecipitation mixing gave another evidence for coating of Si3N4 powders with YAG additives. SIMS analysis for composition on the surface and in the matrix of mixed powders showed that the YAG additives are highly enriched on the surface of coprecipitation-treated Si3N4 powders. Especially when a small amount of additive was used, the effect of homogeneous additive distribution on densification was preceptible: After pressureless-sintering of powder compacts containing 5 mol% YAG at 1800$^{\circ}C$ for 0.5h, a sintered density of 96.5% theoretical was obtained from the specimens prepared bycoprecipitation in comparison with 93.8% from the mechanically-mixed one.

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Study on the Self-Aligned HgTe Nanocrystallites Induced by Controlled Precipitation Technique in HgTe-PbTe Quasi-Binary Semiconductor System: Part I. TEM Study

  • Lee, Man-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.226-231
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    • 2002
  • The present study discusses the results of the controlled precipitation of HgTe nanocrystals in a PbTe semiconductor matrix and demonstrates its effectiveness in producing well-organized and crystallographically aligned semiconductor nanocrystals. Following the similar procedure used in metallic alloys, the semiconductor alloys are treated at 600$^{\circ}C$ for 48 hours, quenched and aged up to 500 hours at 300$^{\circ}C$ and 450$^{\circ}C$ to induce homogeneous nucleation and growth of HgTe nanocrystalline precipitates. Examination of the resulting precipitates using transmission electron microscopy (TEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the {100} habit planes making a crystallographic relation of {100}$\sub$HgTe///{100}$\sub$PbTe/ and [100]$\sub$HgTe///[100]$\sub$PbTe/. It is also found that the nato-disc undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for the preparation of the desirable quantum-dot nanostructures.

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Design and Implementation of OLED Display Driver IC (OLED 디스플레이 구동 IC 설계 및 구현)

  • Lee, Seung-Eun;Oh, Won-Seok;Park, Jin;Lee, Sung-Chul;Choi, Jong-Chan
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.293-296
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    • 2002
  • This paper proposes new driving methods for designing a driver independent of the current property of organic light emitting diodes (OLED) displays. The proposed methods are the Look-Up Table (LUT) and the Pulse Width Modulation (PWM). The LUT is used to handle the amount of the current for driving the OLED display panel and the PWM is applied to represent the gray scale on the OLED display panel. Segment and common drivers were implemented using delay circuits to prevent short-circuit current and a DC-DC converter was designed to supply the drivers with a power source. In particular, tile proposed methods are used for the manufacturing of 1.8" 128$\times$128 dot passive matrix OLED display panel. The designed circuit was fabricated using 0.6w, 2-poly, 3-metal, CMOS process and applied to the Personal Communication System (PCS) phone successfully.ully.

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Study on the Dislocation Behavior during Creep in 12% Chromium Steel (12% Cr 강의 크리이프중 전위거동에 관한 연구)

  • Oh, Sea-Wook;Jang, Yun-Seok
    • Journal of Ocean Engineering and Technology
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    • v.4 no.2
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    • pp.262-262
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    • 1990
  • In order to check the effect of dislocation behavior on creep rate in 12% Chromium steel, 14 samples of different compositions were examined by creep rupture test, and subgrain sizes, distribution of dislocations and precipitates were checked. And, authors reviewed the behaviors of dislocations, the formation and growth of subgrains and precipitates during creep. The results are as the following: 1) Creep rates calculated by .epsilon. over dot = .rho.bv show 10-15% higher values than actual data measured. However, authors conclude that the density and velocity of dislocations together with subgrain size are important factors governing deformation during creep in 12% chromium steel. 2) The values of the strength of obstacles in the mobility of dislocations are more clearly depended on the effective stress in the range of $10{\pm}5kgf/mm^{2}$ and increase with the increase of temperature. 3) Creep rates decrease with the smaller sizes of subgrains formed and can result in the longer creep rupture lives(hours). The smaller subgrains can be made by forming shorter free gliding distances of dislocations with very fine precipitates formed in the matrix during creep by applying proper alloy design. 4) Dislocation mobility gets hindered by precipitates occurring, which are coarsened by the softening process governed by diffusion during long time creep.

Study on the Dislocation Behavior during Creep in 12% Chromium Steel (12% Cr 강의 크리이프중 전위거동에 관한 연구)

  • Oh, Sea-Wook;Jang, Yun-Seok
    • Journal of Ocean Engineering and Technology
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    • v.4 no.2
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    • pp.112-120
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    • 1990
  • In order to check the effect of dislocation behavior on creep rate in 12% Chromium steel, 14 samples of different compositions were examined by creep rupture test, and subgrain sizes, distribution of dislocations and precipitates were checked. And, authors reviewed the behaviors of dislocations, the formation and growth of subgrains and precipitates during creep. The results are as the following: 1) Creep rates calculated by .epsilon. over dot = .rho.bv show 10-15% higher values than actual data measured. However, authors conclude that the density and velocity of dislocations together with subgrain size are important factors governing deformation during creep in 12% chromium steel. 2) The values of the strength of obstacles in the mobility of dislocations are more clearly depended on the effective stress in the range of $10{\pm}5kgf/mm^{2}$ and increase with the increase of temperature. 3) Creep rates decrease with the smaller sizes of subgrains formed and can result in the longer creep rupture lives(hours). The smaller subgrains can be made by forming shorter free gliding distances of dislocations with very fine precipitates formed in the matrix during creep by applying proper alloy design. 4) Dislocation mobility gets hindered by precipitates occurring, which are coarsened by the softening process governed by diffusion during long time creep.

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A Study of 17×17 LED Dot Matrix for offring Various Contents (다양한 콘텐츠 제공을 위한 17×17 LED 도트 매트릭스 제작 및 연구)

  • Bae, Ye-Jeong;Kwon, Jong-Man;Jeong, Sun-Ho;Park, Goo-Man;Cha, Jae-Sang
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2016.11a
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    • pp.197-198
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    • 2016
  • 최근 RGB LED 조명은 다양한 장점으로 이를 활용한 연구가 진행되고 있으며 단순 조명이 아닌 정보전달 및 공간연출의 디자인적 요소의 역할을 이행하기도 한다. RGB의 혼합으로 다양한 색상이 표현 가능한 LED를 사용하여 개별적으로 LED를 제어해 여러 가지 색상 및 모양이 표현 가능한 LED 도트 매트릭스를 제작하였으며, 이를 활용해 다양한 콘텐츠를 출력하고자 한다. 다양한 모양의 콘텐츠에선 개별적으로 LED를 제어하고, 그 외의 콘텐츠에선 원하는 LED를 그룹지어 제어한다. 본 논문에서 제작한 LED 도트 매트릭스는 많은 정보를 전달 할 수 있으며, 다양한 콘텐츠 제공으로 인한 상업화 및 효율성의 확대를 꾀할 수 있다.

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Data Acquisition and Processing System for Tractors Field Performance (트랙터의 포장성능평가(圃場性能評價)를 위한 자료수집처리(資料蒐集處理) 시스템의 개발(開發))

  • Ryu, K.H.;Ryuh, Y.S.;Kang, E.;Park, B.S.;Chang, S.K.
    • Journal of Biosystems Engineering
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    • v.10 no.2
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    • pp.19-26
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    • 1985
  • This study was carried out to develop a versatile data acquisition/processing system for overall tractor performance utilizing a NEC PC-8001 microcomputer. The data acquisition system measures drawbar pull and power, wheel torque and axle power, ground speed, wheel slip, fuel flow, and engine speed. The system stores hexadecimal data for these variables in memory. Upon completion of each test run, all hexadecimal data stored in memory are recorded on floppy disc. The data processing system reads in the data collected on floppy disc and interprete them using several graphical and statistical techniques. The system uses the same microcomputer and a dot-matrix printer. The data acquisition system has been installed on a GOLDSTAR 500 tractor (2WD, 50 ps). A field study has shown that tractor performance data can be quickly and easily collected. It also appeared that the data processing system can be used to efficiently analyze the collected data. The data acquisition system has some troublesome in mounting and handling on tractor since it uses a general-purpose computer consisting of several components.

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InAs/GaAs 양자점 태양전지에서 AlGaAs Potential Barrier 두께에 따른 Photoreflectance 특성 및 내부 전기장 변화

  • Son, Chang-Won;Ha, Jae-Du;Han, Im-Sik;Kim, Jong-Su;Lee, Sang-Jo;Smith, Ryan;Kim, Yeong-Ho;Kim, Seong-Jun;Lee, Sang-Jun;No, Sam-Gyu;Park, Dong-U;Kim, Jin-Su;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.306-307
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    • 2011
  • Franz Keldysh Oscillation (FKO)은 p-n 접합 구조의 공핍층(depletion zone)에서 전기장(electric field)에 의해 발생되며, Photoreflectance (PR) spectroscopy를 통하여 관측된다. InAs/GaAs 양자점 태양전지(Quantum Dot Solar Cells, QDSCs)에서 PR 신호에 대한 Fast Fourier Transform (FFT)을 통하여 FKO 주파수들을 관측할 수 있고, 각각의 FKO 주파수들은 태양전지 구조에 대응하는 표면 및 내부전기장(internal electric field) 들로 분류할 수 있다. InAs/GaAs 양자점 태양전지에서 AlGaAs potential barrier의 두께에 따른 내부전기장의 변화를 조사하기 위해, GaAs-matrix에 8주기의 InAs 양자점 층이 삽입된 태양전지를 molecular beam epitaxy (MBE) 방법으로 성장하였다. 양자점의 크기는 2.0 monolayer (ML)이며, 각 양자점 층은 1.6 nm에서 6.0 nm의 AlGaAs potential barrier들로 분리되어 있다. 또한 양자점 층의 위치에 따라 내부전기장 변화를 조사하기 위해, p-i-n 구조에서 양자점 층이 공핍층 내에 위치한 경우와 p+-n-n+ 구조에서 양자점 층이 공핍 층으로부터 멀리 떨어진 n-base 영역에 삽입하여 실험결과를 비교분석하였다. PR 실험결과로부터, p-i-n 구조에서 InAs 양자점 태양전지의 내부전기장 변화는 potential barrier 두께에 따라 다소 복잡한 변화를 보였으며, 이는 양자점 층이 공핍층 내에 위치함으로써 격자 불일치(lattice mismatch)로 발생된 응력(strain)의 영향으로 설명할 수 있다. 이러한 결과들을 각각의 태양전지 구조에서 표면 및 내부전기장에 대해 계산된 값들에 근거하여, p+-n-n+ 구조에서 양자점 층이 공핍 층으로부터 멀리 떨어진 영역에 삽입된 경우의 결과와 비교해 보면 내부전기장의 변화는 더욱 분명해진다. 즉, 양자점 층의 potential barrier의 두께를 조절하거나, 양자점 층의 위치를 변화시킴으로써 양자점 태양전지의 내부전기장을 조작할 수 있으며, 이는 PR 실험을 통해 FKO를 관측함으로써 확인할 수 있다.

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Designing a Embedded System for Remote Control of LDM (LDM 원격 제어를 위한 임베디드 시스템 구성)

  • Moon Cheol-Hong;Kang Sang-Woo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.8 s.338
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    • pp.27-34
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    • 2005
  • In this paper, FPGA It/w and S/W Embedded system for LDM remote control is implemented. XScale CPU is used on developed system and in communcation ethenet and serial is used. CPU interface with H/W LDM rotation and to drive LDM FPGA logic is implemented, to transmit LDM data from long distance command packet is composed, for S/W Embedded linux is used to design linux device driver and linux application program. This S/W is run by module so by loading this module to linu)( file system it can do any movement. Also by compiling Embedded linux to the system it can lower the price of the system. By using this H/W and S/W theory it can be used on any other embedded system.

Improving the Color Gamut of a Liquid-crystal Display by Using a Bandpass Filter

  • Sun, Yan;Zhang, Chi;Yang, Yanling;Ma, Hongmei;Sun, Yubao
    • Current Optics and Photonics
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    • v.3 no.6
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    • pp.590-596
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    • 2019
  • To improve the color gamut of a liquid-crystal display (LCD), we propose a bandpass filter that is added to the backlight unit to optimize the backlight spectrum. The bandpass filter can only transmit red, green and blue light in the visible range, while reflecting the unwanted light. We study the optical properties of the bandpass filter using the transfer-matrix method, and the effect of the bandpass filter on the color gamuts of LCDs is also investigated. When a bandpass filter based on a 5-layer configuration comprising low and high refractive indices ((HL)2H) is used in phosphor-converted white-light-emitting diode (pc-WLED), K2SiF6:Mn4+ (KSF-LED), and quantum-dot (QD) backlights, the color gamuts of the LCDs improve from 72% to 95.3% of NTSC, from 92% to 106.7% of NTSC, and from 104.3% to 112.2% of NTSC respectively. When the incident angle of light increases to 30°, the color gamuts of LCDs with pc-WLED and KSF-LED backlights decrease by 2.9% and 1% respectively. For the QD backlight, the color gamut almost does not change. When the (HL)2H structure is coated on the diffusion film, the color gamut can be improved to 92.6% of NTSC (pc-WLED), 105.6% of NTSC (KSF-LED), and 111.9% of NTSC (QD). The diffusion film has no obvious effect on the color gamut. The results have an important potential application in wide-color-gamut LCDs.