• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.8-13
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• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Journal of Dairy Science and Biotechnology
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• v.33 no.4
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• pp.271-275
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• 2015

Colloidal semiconductor CdSe-ZnS core-shell nanocrystal quantum dot (Qdot) are luminescent inorganic fluorophores that show potential to overcome some of the functional limitations encountered with organic dyes in fluorescence labeling applications. Salmonella Enteritidis has emerged as a major cause of human salmonellosis worldwide since the 1980s. A rapid, specific, and sensitive method for the detection of Salmonella Enteritidis was developed using Qdot as a fluorescence marker coupled with immunomagnetic separation. Magnetic beads coated with anti-Salmonella Enteritidis antibodies were employed to selectively capture the target bacteria, and biotin-conjugated anti-Salmonella antibodies were added to form sandwich immune complexes. After magnetic separation, the immune complexes were labeled with Qdot via biotin-streptavidin conjugation, and fluorescence measurement was carried out using a fluorescence measurement system. The detection limit of the Qdot method was a Salmonella Enteritidis concentration of $10^3$ colony-forming units (CFU)/mL, whereas the conventional fluorescein isothiocyanate-based method required over $10^5CFU/mL$. The total detection time was within 2 h. In addition to the potential for general nanotechnology development, these results suggest a new rapid detection method of various pathogenic bacteria from a complex food matrix.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Journal of Marine Bioscience and Biotechnology
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• v.1 no.3
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• pp.186-192
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• 2006

Short interspersed repetitive elements (SINEs) are dispersed throughout eukaryotic genomes. These SINEs have been shown to be excellent phylogenetic markers for the closed related species. In this report, we isolated two novel families of SINEs from the mud loach. The two SINE families, mlSINE-L and mlSINE-S, have genomic lengths of about 410bp and 270bp, respectively. 5' and 3' ends of the SINE families are well conserved and highly homologous to each of corresponding ends of RSg-1 and SmaI SINEs. Phylogenetic analysis shows that mlSINEs are unique to the mud loach. A dot blot hybridization experiment shows that mlSINE-L has an estimated copy number of $1{\times}10^3$ per $2{\times}10^9bp$ (2.8 pg) and is more frequently distributed at nuclear matrix attachment regions (MARs) than loop DNAs. The result suggests that mlSINEs may preferentially integrate in or near MARs.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.715-720
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• 2000

By the mechanical alloying method. Ni-WC composite materials were prepared to improve the deformation-resistance for creep and sintering of Ni-anode at the operating temperature of $650^{\circ}C$. Mechanically alloyed powder w was initially fabricated by ball milling for 80hr, and then amorphization was occurred by the destruction of ordered crystals based on XRD analysis. In order to investigate the electrochemical performance and sheet characteristics of Ni-WC anode, tape casting process was adopted. Finally, the obtained sheet thickness of Ni- we after sintering at $1180^{\circ}C$ for 60 minutes in $H_2$ atmosphere was O.9mm and the average pore size was $3~5{\mu\textrm{m}}$ with porosities of 55%. The second phase was not observed in Ni- W matrix while W particles were finely and uniformly distributed in Ni matrix. This fine and uniform distributed W particles in Ni matrix are expected to enhance the mechanical properties of Ni anode through the dispersion and solid solution hardening mechanisms.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.440-441
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• 2004

A volumetric three-dimensional (3D) display system was presented, which utilizes a rotating two-dimensional (2D) display panel of light emitting diodes (LEDs) to generate more than 10 million volume pixels (voxels) within a cylindrical volume of 165 mm in height and 292 mm in diameter. Due to persistence of vision, momentarily addressed voxel information is perceived and fused into a 3D image. Important cues for depth perception, such as binocular parallax, accommodation, convergence and motion parallax are satisfied automatically and naturally, thus it is suitable for individual or group viewing, without the need for any special visual aids.

• Journal of the military operations research society of Korea
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• v.15 no.2
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• pp.105-126
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• 1989

A Geographic Information System (GIS) is a system designed to capture, store, manipulate, retrieve and display the data which are referenced to geographic location. With the progress of computer graphics technologies, GIS is now become applicable to microcomputer level. A prototype Sea Information System (SIS) applicable to microcomputer has been developed for serving informations related to naval operations in the special sea areas. This system includes GIS technologies, cartographic data captured through the tablet digitizer. which results immediate displaying on pen plotters. GIS provides users with menu-driven user interface for the retrieval of informations concerning military zones, patrol area of war ship, naval bases, radar sites and its search area, missile stations, and ships' current positions. The system is currently applicable to IBM PC/AT. Minimal hardware configuration consists 640k RAM, hard disk, and pen plotter or dot matrix printer.