• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• Carbon letters
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• v.10 no.2
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• pp.123-130
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• 2009

Multi-elements doped $TiO_2$ was prepared as a new photocatalyst in order to decrease the band gap of $TiO_2$ by sol-gel process which can provide the large active sites of $TiO_2$. Multi-elements were doped by using a single precursor, tetraethylammonium tetrafluoroborate (TEATFB). By the benefit of large specific surface area of $TiO_2$ prepared by sol-gel process, catalysts showed initial fast removal of dye. The photoactivity showed that the doped catalysts significantly promote the light reactivity than undoped $TiO_2$. The commendable photoactivity of prepared catalysts is predominantly attributable to the doping of anions which may reduce the band gap.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.203-203
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.141.2-141
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• 2003

• Applied Chemistry for Engineering
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• v.26 no.2
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• pp.121-127
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• 2015

Nanotubular $TiO_2$ prepared by electrochemical anodization has been significantly used for various applications due to high aspect ratio structures showing a high chemical stability. Morphological properties of nanotubular titanium oxide are easily tailored by adjusting types and compositions of electrolyte, pH value, applied voltage, temperature and anodization time. Since their catalytic properties can be enhanced by doping foreign elements into $TiO_2$, metal as well as non-metal elements are doped into $TiO_2$ nanotubes using different methods. For example, single anodization, thermal annealing, precipitation, and electrochemical deposition have been applied to simplify the doping process. In this review, anodization of Ti to produce $TiO_2$ and doping methods will be discussed in detail.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.33.1-33.1
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• 2011

Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.54-61
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• 1998

A new Triple well structure is proposed for improved latch-up immunity at deep submicron CMOS device. Optimum latch-up immunity process condition is established and analyzed with varying ion implantation energy and amount of dose and also compared conventional twin well structure. Doping profile and structure are investigated using ATHENA which is process simulator, and then latch-up current is calculated using ATLAS which is device simulator. Two types of different process are affected by latch-up characteristics and shape of doping profiles. Finally, we obtained the best latch-up immunity with 2.5[mA/${\mu}{m}$] trigger current using 2.5 MeV implantation energy and 1$\times$10$^{14}$ [cm$^{-2}$ ] dose at p-well

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.