• Journal of Powder Materials
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• v.29 no.6
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• pp.468-476
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• 2022

Yttria-stabilized zirconia (YSZ) has a low thermal conductivity, high thermal expansion coefficient, and excellent mechanical properties; thus, it is used as a thermal barrier coating material for gas turbines. However, during long-time exposure of YSZ to temperatures of 1200℃ or higher, a phase transformation accompanied by a volume change occurs, causing the YSZ coating layer to peel off. To solve this problem, YSZ has been doped with trivalent and tetravalent oxides to obtain coating materials with low thermal conductivity and suppressed phase transformation of zirconia. In this study, YSZ is doped with trivalent oxides, Nd₂O₃, Yb₂O₃, Al₂O₃, and tetravalent oxide, TiO₂, and the thermal conductivity of the obtained materials is analyzed according to the composition; furthermore, the relative density change, microstructure change, and m-phase formation behavior are analyzed during long-time heat treatment at high temperatures.

• Current Photovoltaic Research
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• v.11 no.3
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.5
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• pp.413-420
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• 2023

Holmium-doped TiO₂ nanotubes (Ho-TNTs) were manufactured through anodization treatment and electrochemical deposition, and optimization experiments were conducted using various Holmium doping concentrations and time as variables. Surface as well as electrochemical characteristics were analyzed to study the prepared photocatalysts. Ho-TNTs were found to exist only in anatase phase through X-ray diffraction analysis. Ho-TNTs with 0.01 wt% 100 seconds shows a photocurrent density of 3.788 mA/cm² and an effective photo-conversion efficiency (PCE) of 4.30%, which is more efficient than pure TiO₂ nanotubes (pure-TNTs) (at bias potential 1.5 V vs. Hg/HgO). The photocatalytic activity of the aforementioned Ho-TNTs for hydrogen production was evaluated with the result of -29.20 µmol/h·cm².

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.32-43
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• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.39-44
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• 2016

Determination of the structural, electronic, and magnetic properties of the magnetically doped bismuth-telluride alloys are drawing lots of interest in the fields of the thermoelectric application as well as the research on magnetic interaction and topological insulator. In this study, we performed the first-principles electronic structure calculations within the density functional theory for the Gd doped bismuth-tellurides in order to study its magnetic properties and magnetic phase stability. All-electron FLAPW (full-potential linearized augmented plane-wave) method is employed and the exchange correlation potentials of electrons are treated within the generalized gradient approximation. In order to describe the localized f-electrons of Gd properly, the Hubbard +U term and the spin-orbit coupling of the valence electrons are included in the second variational way. The results show that while the Gd bulk prefers a ferromagnetic phase, the total energy differences between the ferromagnetic and the antiferromagnetic phases of the Gd doped bismuth-telluride alloys are about ~1meV/Gd, indicating that the stable magnetic phase may be changed sensitively depending on the structural change such as defects or strains.

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.418-423
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• 2009

MWCNT(multi-wall carbon nanotube)-doped PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), used as a HIL(hole injection layer) material in OLEDs(organic light emitting diodes), was spin-coated on to the ITO glass to form PEDOT:PSS-MWCNT nano composite thin film. Morphology and transparency characteristics of nano composite thin films with respect to the loading percent of MWCNT have been investigated using FT-IR, UV-Vis and SEM. Furthermore, ITO/PEDOT:PSS-MWCNT/NPD/$Alq_3$/Al devices were fabricated, and then J-V and L-V characteristics were investigated. Functional group-incorporated MWCNT was prepared by acid treatment and showed good dispersion property in PEDOT:PSS solution. PEDOT:PSS-MWCNT thin films possessed good transparency property. For multi-layered devices, it was shown that as the loading percent of MWCNT increased, the current density increased but the luminance dramatically decreased. It might be conclusively suggested that the enhanced charge mobility by MWCNT could increase the current density but the hole trapping property of MWCNT could dramatically decrease the hole mobility in the current devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.