• Title/Summary/Keyword: Doping density

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Room-temperature tensile strength and thermal shock behavior of spark plasma sintered W-K-TiC alloys

  • Shi, Ke;Huang, Bo;He, Bo;Xiao, Ye;Yang, Xiaoliang;Lian, Youyun;Liu, Xiang;Tang, Jun
    • Nuclear Engineering and Technology
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    • v.51 no.1
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    • pp.190-197
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    • 2019
  • W-K-TiC alloys with different titanium carbide concentrations (0.05, 0.1, 0.25, 0.5, 1, 2) wt.% were fabricated through Mechanical Alloying and Spark Plasma Sintering. The effects of the addition of nano-scaled TiC particles on the relative density, Vickers micro-hardness, microstructure, crystal information, thermal shock resistance, and tensile strength were investigated. It is revealed that the doped TiC nano-particles located at the grain boundaries. The relative density and Vickers micro-hardness of W-K-TiC alloys was enhanced with TiC addition and the highest Vickers micro-hardness is 731.55. As the TiC addition increased from 0.05 to 2 wt%, the room-temperature tensile strength raised from 141 to 353 MPa. The grain size of the W-K-TiC alloys decreased sharply from $2.56{\mu}m$ to 330 nm with the enhanced TiC doping. The resistance to thermal shock damage of W-K-TiC alloys was improved slightly with the increased TiC addition.

Fabrication and Electrochemical Characterization of N/S co-doped Carbon Felts for Electric Double-Layer Capacitors (전기이중층 커패시터용 질소/황이 동시에 도핑된 탄소 펠트의 제조 및 전기화학적 성능 평가)

  • Lee, Byoung-Min;Yun, Je Moon;Choi, Jae-Hak
    • Korean Journal of Materials Research
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    • v.32 no.5
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    • pp.270-279
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    • 2022
  • In this study, N/S co-doped carbon felt (N/S-CF) was prepared and characterized as an electrode material for electric double-layer capacitors (EDLCs). A commercial carbon felt (CF) was immersed in an aqueous solution of thiourea and then thermally treated at 800 ℃ under an inert atmosphere. The prepared N/S-CF showed a large specific surface area with hierarchical pore structures. The electrochemical performance of the N/S-CF-based electrode was evaluated using both 3-electrode and 2-electrode systems. In the 3-electrode system, the N/S-CF-based electrode showed a good specific capacitance of 177 F/g at 1 A/g and a good rate capability of 41% at 20 A/g. In the 2-electrode system (symmetric capacitor), the freestanding N/S-CF-based electrode showed a specific capacitance of 275 mF/cm2 at 2 mA/cm2, a rate capability of 62.5 % at 100 mA/cm2, a specific power density of ~ 25,000 mW/cm2 at an energy density of 23.9 mWh/cm2, and a cycling stability of ~ 100 % at 100 mA/cm2 after 20,000 cycles. These results indicate the N/S co-doped carbon felts can be a promising candidate as a new electrode material in a symmetric capacitor.

One-Step β-Li2SnO3 Coating on High-nickel Layered Oxides via Thermal Phase Segregation for Li-ion Batteries

  • Seongmin Kim;Hanseul Kim;Sung Wook Doo;Hee-Jae Jeon;In Hye Kim;Hyun-seung Kim;Youngjin Kim
    • Journal of Electrochemical Science and Technology
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    • v.14 no.3
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    • pp.293-300
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    • 2023
  • The global energy storage markets have gravitated to high-energy-density and low cost of lithium-ion batteries (LIBs) as the predominant system for energy storage such as electric vehicles (EVs). High-Ni layered oxides are considered promising next-generation cathode materials for LIBs owing to their significant advantages in terms of high energy density. However, the practical application of high-Ni cathodes remains challenging, because of their structural and surface instability. Although extensive studies have been conducted to mitigate these inherent instabilities, a two-step process involving the synthesis of the cathode and a dry/wet coating is essential. This study evaluates a one-step β-Li2SnO3 layer coating on the surface of LiNi0.8Co0.2O2 (NC82) via the thermal segregation of Sn owing to the solubility limit with respect to the synthesis temperature. The doping, segregation, and phase transition of Sn were systematically revealed by structural analyses. Moreover, surface-engineered 5 mol% Sn-coated LiNi0.8Co0.2O2 (NC82_Sn5%) exhibited superior capacity retention compared to bare NC82 owing to the stable surface coating layer. Thus, the developed one-step coating method is suitable for improving the properties of high-Ni layered oxide cathode materials for application in LIBs.

Variations in electrode characteristics through simplification of phosphorus-doped NiCo2O4 electrode manufacturing process (인이 도핑된 NiCo2O4 전극 제조 공정의 간소화를 통한 전극 특성의 변화)

  • Seokhee-Lee;Hyunjin Cha;Jeonghwan Park;Young Guk Son;Donghyun Hwang
    • Journal of the Korean institute of surface engineering
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    • v.56 no.5
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    • pp.299-308
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    • 2023
  • In this study, phosphorus (P)-doped nickel cobaltite (P-NiCo2O4) and nickel-cobalt layered double hydroxide (P-NiCo-LDH) were synthesized on nickel (Ni) foam as a conductive support using hydrothermal synthesis. The thermal properties, crystal structure, microscopic surface morphology, chemical distribution, electronic state of the constituent elements on the sample surface, and electrical properties of the synthesized P-NiCo2O4 and P-NiCo-LDH samples were analyzed using thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The P-NiCo2O4 electrode exhibited a specific capacitance of 1,129 Fg-1 at a current density of 1 Ag-1, while the P-NiCo-LDH electrode displayed a specific capacitance of 1,012 Fg-1 at a current density of 1 Ag-1. When assessing capacity changes for 3,000 cycles, the P-NiCo2O4 electrode exhibited a capacity retention rate of 54%, whereas the P-NiCo-LDH electrode showed a capacity retention rate of 57%.

Optimization of Gate Stack MOSFETs with Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.228-239
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    • 2004
  • In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

Enhancement of Data Retention Time in DRAM through Optimization of Sidewall Oxidation Precleaning (측면산화 프리크리닝의 최소화를 통한 DRAM의 데이터 유지시간 개선)

  • Chai, Yong-Yoong;Yoon, Kwang-Yeol
    • The Journal of the Korea institute of electronic communication sciences
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    • v.7 no.4
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    • pp.833-837
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    • 2012
  • This paper proposes a DRAM data retention time enhancement method that minimizes silicon loss and undercut at STI sidewall by reducing the SC1 (Standard Cleaning) time. SC1 time optimization debilitates the parasitic electric field in STI's top corner, which reduces an inverse narrow width effect to result in reduction of channel doping density without increasing the subthreshold leakage of cell Tr. Moreover, it minimizes the electric field in depletion area from cell junction to P-well, increasing yield or data retention time.

Improved performance of PEDOT:PSS/pentacene Schottky diode on EAPap (셀룰로우스 기반의 EAPap 작동기의 PEDOT_PSS/Pentacene를 이용한 Schottky diode 성능 개선)

  • Lim, Hyun-Kyu;Cho, Ki-Youn;Kang, Kwang-Sun;Kim, Jae-Hwan
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2007.11a
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    • pp.77-81
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    • 2007
  • Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.

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The Effect of Cd-Dopping on Sintering behavior of PNN-PT-PZ Ceramics (PNN-PZ-PT 세라믹스의 소결 거동에 미치는 Cd-doping 효과)

  • 조정호;김호기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.217-220
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    • 1995
  • By substituting Cd$\^$2+/ into both A-site and B-site in PNN-PZ-PT ternary perovskite material, it is possible to determine the effects of the substitution site of Cd$\^$2+/ on sintering behavior. Sintering was performed in the temperature range from 1000$^{\circ}C$ to 1300$^{\circ}C$. The substitution site of Cd$\^$2+/ is identified by XPS spectra. Although Cd$\^$2+/ is substituted into both A-site and B-site in PNN-PZ-PT, Cd$\^$2+/ prefers A-site to B-site. The density is influenced by substitution site of Cd$\^$2+/. If Cd$\^$2+/ replaces Pv$\^$2+/, weight gain is observed during sinterig process. On the contrary, if Cd$\^$2+/ replaces Ni$\^$2+/, weight loss is promoted during sintering. From these weight changes, it is believed that Cd$\^$2+/ changes the bonding strength between B-site cation and oxygen of octahedron in perovskite structure. The changes of lattice parameters as a function of Cd$\^$2+/ content were consistent with those of the bonding strength. The densities of A-site-doped compositions were higher than those of B-site-doped composition.

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Electronic Structure Studies on $Ba(Fe_{1-x}Ru_x)_2As_2$ by Photoemission (광전자 분석 실험을 이용한 $Ba(Fe_{1-x}Ru_x)_2As_2$ 물질의 전자구조분석)

  • Jung, W.S.;Kim, Y.K.;Kim, B.Y.;Matsunami, M.;Kimura, S.;Eom, M.J.;Kim, J.S.;Kim, C.
    • Progress in Superconductivity
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    • v.12 no.2
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    • pp.99-103
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    • 2011
  • We performed angle resolved photoelectron spectroscopy (ARPES) studies on Ru doped $BaFe_2As_2$ with various Ru contents. Ru, which is doped into a parent compound $BaFe_2As_2$ and substitute Fe, does not donate or accept electrons. However, it induces superconductivity. From ARPES data along the high symmetry cuts and Fermi surface maps, we investigate the electron correlation and carrier density at the Fermi level. We observe that the Fermi velocity increases with Ru doping, suggesting reduction in electron correlation. In addition, we address issues on local vs. itinerant pictures for the magnetism in $BaFe_2As_2$.

Flexible and Transparent Plastic Electrodes Composed of Reduced Graphene Oxide/Polyaniline Films for Supercapacitor Application

  • Sarker, Ashis K.;Hong, Jong-Dal
    • Bulletin of the Korean Chemical Society
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    • v.35 no.6
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    • pp.1799-1805
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    • 2014
  • In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.