• Title/Summary/Keyword: Doping density

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SnO2가 첨가된 저온소결 (Na,K,Li)(Nb,Sb,Ta)O3계 세라믹스의 유전 및 압전 특성 (Dielectric and Piezoelectric Properties of Low Temperature Sintering (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics Doped with SnO2)

  • 이광민;류주현;이지영
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.690-693
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    • 2015
  • In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

ZnO가 PMN-PNN-PZT 세라믹스의 저온소결에 미치는 영향 (Effect of ZnO on Low Temperature Sintering of PMN-PNN-PZT Ceramics)

  • 이상호;류주현;홍재일;류성림
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.32-33
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    • 2006
  • In this study, in order to develop multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$. $Na_2CO_3$ and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor and mechanical quality factor of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4wt% and then decreased. At the sintering temperature of $900^{\circ}C$ and 0.4wt% ZnO addition, density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant showed the optimum value of 7.876g/$cm^2$, 1299, 0.612, 1151 and 369pC/N, respectively.

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Accurate electronic structures for Ce doped SiAlON using a semilocal exchange-correlation potential

  • 유동수;정용재
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.438-438
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    • 2011
  • White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

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Structural and Magnetic Properties of Cr-Zn Nanoferrites Synthesized by Chemical Co-Precipitation Method

  • Powar, Rohit R.;Phadtare, Varsha D.;Parale, Vinayak G.;Pathak, Sachin;Piste, Pravina B.;Zambare, Dnyandevo N.
    • 한국세라믹학회지
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    • 제56권5호
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    • pp.474-482
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    • 2019
  • Chromium-doped zinc ferrite nanoparticles with the general formula CryZnFe2-yO4 (y = 0, 0.025, 0.05, 0.075, and 0.1) were synthesized by a surfactant-assisted chemical co-precipitation route using metal nitrate salt precursors. The phase purity and structural parameters were determined by powder X-ray diffraction. The concentration of Cr3+ doped into ZnFe2O4 (ZF) noticeably affected the crystallite size, which was in the range of 22 nm to 36 nm, and all samples showed a single cubic spinel structure without any secondary phase or impurities. The lattice parameter, X-ray density, and skeletal density increased with an increase in the Cr-doping concentration; on the other hand, a decreasing trend was observed for the particle size and porosity. The influence of Cr3+ substitution on ZF magnetic properties were studied under an applied field of 15 kOe. The overall results revealed that the incorporation of a small amount of Cr dopant changed the structural, electrical, and magnetic properties of ZF.

Gd2O3 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적.전기적 특성 (Effects of Gd2O3 Addition on Optical and Electrical Properties of MgO Films as a Protective Layer for AC PDPs)

  • 김창일;임은경;박용준;이영진;백종후;최은하;정석;김정석
    • 한국전기전자재료학회논문지
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    • 제20권7호
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    • pp.620-625
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    • 2007
  • The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

  • Yoon, Young Jun;Lee, Jae Sang;Kang, In Man;Lee, Jung-Hee;Kim, Dong-Seok
    • Nuclear Engineering and Technology
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    • 제53권4호
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    • pp.1284-1288
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    • 2021
  • In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and opencircuit voltage (VOC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The JSC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of JSC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

압전 스피커 응용을 위한 PSN-PZT계 세라믹스의 미세구조 분석 및 전기적 특성 평가 (Microstructures and Electrical Properties of PSN-PZT Ceramics for Piezoelectric Speaker)

  • 김성진;권순용
    • 한국전기전자재료학회논문지
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    • 제32권2호
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    • pp.110-115
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    • 2019
  • $Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

Rational Design of Binder-Free Fe-Doped CuCo(OH)2 Nanosheets for High-Performance Water Oxidation

  • Patil, Komal;Jang, Su Young;Kim, Jin Hyeok
    • 한국재료학회지
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    • 제32권5호
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    • pp.237-242
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    • 2022
  • Designing and producing a low-cost, high-current-density electrode with good electrocatalytic activity for the oxygen evolution reaction (OER) is still a major challenge for the industrial hydrogen energy economy. In this study, nanostructured Fe-doped CuCo(OH)2 was discovered to be a precedent electrocatalyst for OER with low overpotential, low Tafel slope, good durability, and high electrochemically active surface sites at reduced mass loadings. Fe-doped CuCo(OH)2 nanosheets are made using a hydrothermal synthesis process. These nanosheets are clumped together to form a highly open hierarchical structure. When used as an electrocatalyst, the Fe-doped CuCo(OH)2 nanosheets required an overpotential of 260 mV to reach a current density of 50 mA cm-2. Also, it showed a small Tafel slope of 72.9 mV dec-1, and superior stability while catalyzing the generation of O2 continuously for 20 hours. The Fe-doped CuCo(OH)2 was found to have a large number of active sites which provide hierarchical and stable transfer routes for both electrolyte ions and electrons, resulting in exceptional OER performance.

A unique Vietnam's red clay-based brick reinforced with metallic wastes for γ-ray shielding purposes: Fabrication, characterization, and γ-ray attenuation properties

  • Ta Van Thuong;O.L. Tashlykov;K.A. Mahmoud
    • Nuclear Engineering and Technology
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    • 제56권4호
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    • pp.1544-1551
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    • 2024
  • A unique brick series based on Vietnamese clay was manufactured at 114.22 MPa pressure rate for γ-ray attenuation purposes, consisting of (x) metallic waste & (90%-x) red clay mineral & 10% (hardener mixed with epoxy resin), where (x) is equal to the values 0%, 20%, 40%, 50%, and 70%. The impacts of industrial metal waste ratio in the structure and radiation protective characteristics were evaluated experimentally. The increase in metallic waste doping concentrations from 0% to 70% was associated with an increase in the manufactured brick's density (ρ) from 2.103 to 2.256 g/cm3 while the fabricated samples' porosity (Φ) decreased from 11.7 to 1.0%, respectively. Together with a rise in fabricated brick's density and a decrease in their porosities, the manufactured bricks' γ-ray attenuation capacities improved. The measured linear attenuation coefficient (μ, cm-1) was improved by 30.8%, 22.1%, 21.6%, and 19.7%, at Eγ equal to the values respectively 0.662, 1.173, 1.252, and 1.332 MeV, when the metallic waste concentration increased from 0% to 70%, respectively. The study demonstrates that manufactured bricks exhibit superior radiation shielding properties, with radiation protection efficiencies of 88.4%, 90.0%, 91.7%, 92.1%, and 92.4% for bricks with industrial metal waste contents of 0%, 20%, 40%, 50%, and 70%, respectively, at γ-ray energy (Eγ) of 1.332 MeV.

Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method

  • Nam, Gil Mo;Kwon, Myoung Seok
    • 한국세라믹학회지
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    • 제53권3호
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    • pp.338-342
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    • 2016
  • ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.