• 한국정보통신학회논문지
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• 제17권10호
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• pp.2403-2408
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• 2013

본 연구에서는 이중게이트 MOSFET에 대한 차단전류를 분석하기 위하여 도핑분포함수에 따라 상단과 하단게이트에 의한 전류분포를 분석할 것이다. 분석을 위하여 실험치에 유사한 결과를 얻을 수 있도록 채널도핑농도의 분포함수로써 가우시안함수를 사용하여 유도한 포아송방정식의 이차원 해석학적 전위모델을 이용하여 차단전류를 분석하였다. 특히 소자 파라미터인 채널길이, 채널두께, 게이트산화막 두께 및 채널도핑농도 등을 파라미터로 하여 가우스함수의 이온주입범위 및 분포편차의 변화에 대한 차단전류의 변화를 분석하였다. 분석결과 차단전류는 소자파라미터에 의한 상하단 전류의 변화에 따라 커다란 변화를 보이고 있었으며 특히 채널도핑함수인 가우시안 함수의 형태에 따라서도 큰 변화를 보이고 있다는 것을 관찰할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• 한국재료학회지
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• 제34권7호
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• pp.321-329
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• 2024

In this work, a series of BaTiO₃-based ceramic materials, Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO₃ does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al³⁺ and Nb⁵⁺ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequency-dependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 10⁴) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO₃-based ceramics, which is important for dielectric and energy storage applications.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3319-3325
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• 2014

Eu(III)-doped $CeO_2$ nanorods were prepared by a co-precipitation method at room temperature, and their photoluminescence profiles were examined with different Eu(III)-doping concentrations and thermal annealing temperatures. Scanning electron microscopy, X-ray diffraction crystallography and UV-Vis absorption spectroscopy were employed to examine the morphology, crystal structure and photon absorption profiles of the nanorods, respectively. Additionally, their 2D and 3D-photoluminescence profile maps were obtained to fully understand the photoluminescence mechanism. We found that the magnetic dipole $^5D_0{\rightarrow}^7F_1$ and the electric dipole $^5D_0{\rightarrow}^7F_2$ transitions of Eu(III) were highly dependent on the doping concentration, annealing temperature and excitation wavelength, which was explained by the presence of different Eu(III)-doping sites (with and without an inversion center) in the $CeO_2$ host with a cubic crystal structure.

• EDISON SW 활용 경진대회 논문집
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• 제2회(2013년)
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• pp.256-259
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• 2013

We investigate co-doping effects of conjugated P-N B-N with increasing of N concentration in the graphene sheets using a first principles based on the density functional theory. N doping sites of the graphene consider two possible sites (pyridinic and porphyrin-like). Energy calculation shows that additional doping of B atom in the porphyrin-like N doped graphene ($V+B-N_x$) is hard to form. At the low chemical potential of N, one N atom with additional doping in the graphene ($V+P-N_1$, $P/B-N_1$) has low formation energy on the other hand at high chemical potential of N, high concentration of N ($V+P-N_4$, $P/B-N_3$) in the graphene is governing conformation. From the results of electronic band structure calculation, it is found that $V+P-N_4$ and $P/B-N_3$ cases change the Fermi energy therefore type change is occurred. On the other hand, the cases of $V+P-N_1$ and N+B recover the electronic structure of pristine graphene.

• 한국정보통신학회논문지
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• 제16권3호
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• pp.558-564
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• 2012

Sol-gel 법으로 Eagle 2000 유리 기판 위에 Ga 도핑 농도와 열처리 온도에 따른 GZO 박막을 제작하여, 전기적 및 광학적 특성을 조사하였다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 우수한 (002) 배향성이 관찰되었다. Hall 측정 결과, Ga 도핑 농도가 증가함에 따라 segregation 효과로 인한 캐리어 농도의 감소와 비저항 값의 증가가 관찰되었다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 큰 캐리어 농도($9.13{\times}10^{18}cm^{-3}$)와 가장 낮은 비저항 ($0.87{\Omega}cm$) 값을 나타내었다. 모든 박막은 가시광 영역에서 약 80 % 이상의 투과율을 보였으며, Ga 농도가 1 에서 4 mol% 로 증가함에 따라 에너지 밴드 갭이 좁아지는 Burstein-Moss 효과가 관찰되었다.

• 한국재료학회지
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• 제23권5호
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• pp.255-259
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• 2013

An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• 한국세라믹학회지
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• 제33권5호
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• pp.531-535
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• 1996

ZnGa2O4 and Mn-doped ZnGa2O4 were synthesized using the state reaction method to investigate their photoluminescence characteristics depending on Mn concentration. Under 254nm excitation, ZnGa2O4 exhibited a broad-band emission extending from 330 nm to 610 nm peaking at 450nm. On the other hand Mn-doped ZnGa2O4 showed a new strong narrow-band emission peaking at 504 nm and maximum intensity at the doping concentration of 0.006 mole Mn.