• 한국재료학회지
• /
• 제20권12호
• /
• pp.669-675
• /
• 2010

One of the greatest challenges for our society is providing powerful electrochemical energy conversion and storage devices. Rechargeable lithium-ion batteries and fuel cells are among the most promising candidates in terms of energy and power density. As the starting material, $TiCl_4{\cdot}YCl_3$ solution and dispersing agent (HCP) were mixed and synthesized using ammonia as the precipitation agent, in order to prepare the nano size Y doped spherical $TiO_2$ precursor. Then, the $Li_4Ti_5O_{12}$ was synthesized using solid state reaction method through the stoichiometric mixture of Y doped spherical $TiO_2$ precursor and LiOH. The Ti mole increased the concentration of the spherical particle size due to the addition of HPC with a similar particle size distribution in a well in which $Li_4Ti_5O_{12}$ spherical particles could be obtained. The optimal synthesis conditions and the molar ratio of the Ti 0.05 mol reaction at $50^{\circ}C$ for 30 minutes and at $850^{\circ}C$ for 6 hours heat treatment time were optimized. $Li_4Ti_5O_{12}$ was prepared by the above conditions as a working electrode after generating the Coin cell; then, electrochemical properties were evaluated when the voltage range of 1.5V was flat, the initial capacity was 141 mAh/g, and cycle retention rate was 86%; also, redox reactions between 1.5 and 1.7V, which arose from the insertion and deintercalation of 0.005 mole of Y doping is not a case of doping because the C-rate characteristics were significantly better.

• 전기화학회지
• /
• 제9권2호
• /
• pp.64-69
• /
• 2006

초음파분무열분해법과 한 단계의 후열처리로 이차상이 없는 Al이 첨가된 $Li(Ni_{1/3}Co_{1/3}Mn_{1/3-x}Al_x)O_2$ (x=0.0, 0.005, 0.01. 0.05) 리튬이차전지용 양극활물질을 합성하였다. 합성된 분말은 Al의 첨가량이 많아짐에 따라서 $I_{003}/I_{104}$ 비는 감소하고 입자가 커지는 경향을 보였다. 상온에서 전류밀도 1C의 rate로 $3.0\sim4.5V$ 범위에서 충방전 시험한 결과, Al 치환량이 0.5와 1.0 at%에서는 초기용량이 180과 $184mAhg^{-1}$으로 치환하지 않았을 때의 $182mAhg^{-1}$과 차이가 없었으며, 싸이클 특성도 치환하지 않은 것과 0.5, 1.0 at% 치환한 조성에서 각각 81, 77, 81%의 방전용량이 유지되었다. 그러나 $3.0\sim4.6V$에서는 치환효과가 확실하게 나타나서, 50 싸이클 후의 치환하지 않은 것의 방전용량은 초기용량의 30%가지 감소한데 비하여 Al을 0.5 at% 치환한 것은 70%를 유지하였다. 치환에 의한 싸이클 특성 향상은 XPS 분석 결과 Al 치환이 $Mn^{3+}$의 양을 감소시켰기 때문인 것으로 사료되었다.

• 대한전자공학회논문지
• /
• 제23권4호
• /
• pp.498-505
• /
• 1986

In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

• 한국결정학회지
• /
• 제5권2호
• /
• pp.51-66
• /
• 1994

융액인상법으로 Y3Al5O12 및 Nd: Y3Al5O12단결정을 육성하였다. 인상속도, 회전속도 및 Nd3+이온의 주입농도가 결정의 품질에 미치는 영향을 분석하였다. 광탄성효과및 화학부식 법을 이용하여 여러가지 종류의 결함을 검출하 고, 육성된 결정의 분광학적 성질과 레이저 기능성을 조사하였다. 양질의 단결정을 육성하기 위한 인상속도는 Nd3+이온의 주입농도에 따라 달라진다. Y3Al5O12단결정은 2∼4mm/hr, Nd3+이온 주입농도가 3.0∼3.5a/o 일때 0.6∼0.5mm/hr,4.Oa/o 이상일 때 04mm/hr 이하가 적당하였다. 회전속도가 27∼60rpm 일때 볼록하고, 80∼100rpm 일 때 오목한 고액계면을 형성하였다. 육성된 결정은 <111> 방위로 성장되었으며 격자상수는 12.Ol7A로 측정되었다. 결함으로서 core, (211)facet 줄무의, 금속입자 함유물, 전위 및 광학적 불균질상이 검출되었다. Y3AlO12단결정에 대한 Nd3+이온의 4준위 레이저 천이과정을 확인하고, 육성된 결정으로부터 직경 4.0mm 길이 63mm크기의 레이저 발진봉을 제조한 후 레이저 공진한 결과 lasing threshould 1.8lJ, slope efficiency 0.49%로 측정되었다.

• 한국세라믹학회지
• /
• 제31권12호
• /
• pp.1423-1428
• /
• 1994

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.

• 한국산학기술학회논문지
• /
• 제7권6호
• /
• pp.1284-1291
• /
• 2006

기상 휘발성 유기화합물인 아세톤과 포름알데히드에 대한 분해반응을 $TiO_2$ 광촉매에 귀금속을 혼합 담지하여 분해능을 연구하였다. 아세톤의 경우 $TiO_2$에 팔라디움 혼합담지에 의하여 분해 반응성이 개선되었으며, 일반적인 광촉매 반응에 있어서 수분의 첨가시 OH기의 형성에 따른 분해반응성의 증가를 실험한 결과 아세톤의 경우 수분의 흡착에 의하여 분해반응성이 감소하는 것으로 나타났다. 아세톤의 경우 $45^{\circ}C$가 최적으로 나타났으며, 포름알데히드의 경우는 $75^{\circ}C$가 최적으로 나타났다. 귀금속 담지에 의한 영향에서는 아세톤의 경우 Pd를 $TiO_2$의 중량비 1wt%를 첨가한 경우 반응성의 향상을 보았으며, 포름알데히드의 경우 Pt가 반응성의 향상을 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제23권8호
• /
• pp.651-654
• /
• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Bulletin of the Korean Chemical Society
• /
• 제29권6호
• /
• pp.1217-1223
• /
• 2008

A series of Zr,S co-doped $TiO_2$ were synthesized by a modified sol-gel method and characterized by various spectroscopic and analytical techniques. The presence of sulfur caused a red-shift in the absorption band of $TiO_2$. Co-doping of sulfur and zirconium (Zr-$TiO_2$-S) improves the surface properties such as surface area, pore volume, and pore diameter and also enhances the thermal stability of the anatase phase. The Zr-$TiO_2$-S systems are very effective visible-light active catalysts for the degradation of toluene. All reactions follow pseudo firstorder kinetics with the decomposition rate reaching as high as 77% within 4 h. The catalytic activity decreases in the following order: Zr-$TiO_2$-S >$TiO_2$-S >Zr-$TiO_2$>$TiO_2$$\approx$ P-25, demonstrating the synergic effect of codoping with zirconium and sulfur. When the comparison is made within the series of Zr-$TiO_2$-S, the catalytic performance is found to be a function of Zr-contents as follows: 3 wt % Zr-TiO2-S >0.5 wt % Zr-$TiO_2$-S> 5 wt % Zr-$TiO_2$-S >1 wt % Zr-$TiO_2$-S. Higher calcination temperature decreases the reactivity of Zr-$TiO_2$-S.

• 전력전자학회논문지
• /
• 제24권6호
• /
• pp.411-418
• /
• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of Welding and Joining
• /
• 제21권4호
• /
• pp.46-55
• /
• 2003

TiO$_2$-WO$_3$(8.2wt%) coatings were prepared by the APS (Atmospheric Plasma Spraying) process to clarify the relationship between the process parameters(H$_2$ gas flow rate of plasma 2nd gas and spraying distance) of the APS coating and photo-decomposition efficiency kinetics of the MB(methylene blue) aqueous solution decomposition and to understand the effect of addition of WO$_3$ on photocatalytic properties of TiO$_2$ sprayed coating. Further, the temperature and velocity of flying particles were measured by DPV-2000 to investigate the relationship between microstructure of coatings and process parameters. Properties of coatins were investigated by XRD, SEM, XPS, RAMAN, UV/VIS spectrometer. In case of the TiO$_2$-WO$_3$(8.2wt%) coating, it had a lower anatase fraction than that of pure-TiO$_2$ coatings because of flying in the higher temperature plasma plume by the heavy weight of TiO$_2$, WO$_3$. And, when WO$_3$ added powders were spayed, the doping effects of W ions substituted into the Ti ion sites was not occured during melting and solidification cycles of spraying. It was found that the addition of WO$_3$ was ineffective effective on increasing photo-decomposition efficiency of TiO$_2$ sprayed coating.