• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.232-232
• /
• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.6
• /
• pp.661-666
• /
• 1998

Active reaction sites and electrochemical O2 reduction kinetics on La_{1-x}Sr_xMnO_{3+{\delta}} (x=0.1-0.4)/YSZ (yttria-stabilized zirconia) electrodes are investigated in the temperature range of 700-900 ℃ at $Po_2=10^{-3}$-0.21 atm. Results of the steady-state polarization measurements, which are formulated into the Butler-Volmer formalism to extract transfer coefficient values, lead us to conclude that the two-electron charge transfer step to atomically adsorbed oxygen is rate-limiting. The same conclusion is drawn from the $Po_2$-dependent ac impedance measurements, where the exponent m in the relationship of $I_o$ (exchange current density) ∝ $P_{o_{2}}^m$ is analyzed. Chemical analysis is performed on the quenched Mn perovskites to estimate their oxygen stoichiometry factors (δ) at the operating temperature (700-900 ℃). Here, the observed δ turns out to become smaller as both the Sr-doping contents (x) and the measured temperature increase. A comparison between the 8 values and cathodic activity of Mn perovskites reveals that the cathodic transfer coefficients $({\alpha}_c)$ for oxygen reduction reaction are inversely proportional to δ whereas the anodic ones $({\alpha}_a)$ show the opposite trend, reflecting that the surface oxygen vacancies on Mn perovskites actively participate in the $O_2$ reduction reaction. Among the samples of x= 0.1-0.4, the manganite with x=0.4 exhibits the smallest 8 value (even negative), and consistently this electrode shows the highest ${\alpha}_c$ and the best cathodic activity for the oxygen reduction reaction.

• Korean Journal of Metals and Materials
• /
• v.48 no.3
• /
• pp.262-267
• /
• 2010

$LiNi_{1-x}Mg_xO_2$(x=0, 0.025, 0.05, 0.075, 0.1) samples were synthesized by the solid-state reaction method. The crystal structure was analyzed by X-ray powder diffraction and Rietveld refinement. $LiNi_{1-x}Mg_xO_2$samples give single phases of hexagonal layered structures with a space group of R-3m. The calculated cation-anion distances and angles from the Rietveld refinement were changed with Mg contents in $LiNi_{1-x}Mg_xO_2$. The thicknesses of $NiO_2$ slabs were increased and the distances between the $NiO_2$ slabs were decreased with the increase in Mg contents in the samples. The electrical conductivities of sintered $LiNi_{1-x}Mg_xO_2$ samples were around $10^{-2}$ S/cm at room temperature. The electrochemical performances of $LiNi_{1-x}Mg_xO_2$were evaluated by coin cell test. Compared to $LiNiO_2$, $LiNi_{0.95}Mg_{0.05}O_2$ exhibited improved high-rate capability and cyclability due to the well-ordered layered structure by doping of Mg ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.52-52
• /
• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.153-153
• /
• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Korean Journal of Materials Research
• /
• v.7 no.3
• /
• pp.196-202
• /
• 1997

Perovskite lanthanum doped lead titanate ($(Pb,La)TiO_{3}$ or PLT) thin films were successfully fabricated on Pt/TijSiO.iSi substrates at the temperatures as low as $440~500^{\circ}C$ by eleclron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVII). Since the volatilities of the MC sources arid oxide molecules (especially Ph oxide) increased with increasing deposition temperature, the film deposition rate and the (I'b + La)/'Ti ratio decreased Stoichiometric perovskite PL'T films with good dielectric and leakeage current properties were obtained at the temperatures of $460~480^{\circ}C$. The lanthanum content of the film was nearly directly propotional to $La(DPM)_{3}$ flow rate. As the La/Ti ratio increased from 3.0 to 9.5%, the dielectric constant increased from 360 to 650 and the leakeage current density at 100kV/cm electric field decreased from $4{\times}10^{-5}$ to $4{\times}10_{-8}A/cm^2$.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.42.2-42.2
• /
• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.113-114
• /
• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Electrochemical Society
• /
• v.15 no.2
• /
• pp.67-73
• /
• 2012

Spherical lithium manganese oxide spinel, $LiMn_{2-x}M_xO_4$ (M = Al, Mg, B) prepared by wet-milling, spray-drying, and sintering process has been investigated as a cathode material for lithium ion batteries. As-prepared powders exhibit various surface morphologies and internal density in terms of boron (B) doping level. It is found that the dopant B drives the growth of the primary particle and minimizes the surface area of the powder. As a result, the dopant enhances the internal density of the particles. Electrochemical tests demonstrated that the capacity of the synthesized material at 5 C could be maintained up to 90% of that at 0.2 C. The cycle performance of the material showed that the initial capacity was retained up to 80% even after 500 cycles under the high temperature of $60^{\circ}C$.

• Applied Chemistry for Engineering
• /
• v.5 no.5
• /
• pp.764-771
• /
• 1994

Electrochemical synthesis of conductive polypyrrole films was carried out in nucleophilic solvent containing p-toluenesulfonic acid or bezensulfonic acid as supporting electrolyte and dopant. Also characteristics of degradation and improvement of mechanical properties were studied. The conductivity, tensile strength and elongation of the films obtained in dimethyformamide/p-toluenesulfonic acid had the highest value of 10-40S/cm, $25N/mm^2$ and 10%, respectively. The optimum condition of electrochemical synthesis was $2mA/cm^2$ for constant current method and 0.9V for constant potential method containing 0.5M pyrrole and 0.5M p-TSA. The obtained films showed good stability in air and electrode characteristics of secondary battery by reversibility in doping and undoping. The degradation process was 1st order reaction at various temeprature. The activation energy and rate constant of degradation reaction were $1.01JK^{-1}mol^{-1}$ and $3.1{\times}10^{-7}min^{-1}$ respectively at $25^{\circ}C$. For the improvement of mechanical properties, composition of polypyrrole films with various host polymer were investigated and increase of tensile strength and elongation was confirmed.