• Korean Journal of Materials Research
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• v.31 no.8
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• pp.458-464
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• 2021

Tungsten disulfide (WS₂), a typical 2D layerd structure, has received much attention as a pseudocapacitive material because of its high theoretical specific capacity and excellent ion diffusion kinetics. However, WS₂ has critical limits such as poor long-term cycling stability owing to its large volume expansion during cycling and low electrical conductivity. Therefore, to increase the high-rate performance and cycling stability for pseudocapacitors, well-dispersed WS₂ nanoparticles embedded in carbon nanofibers (WS₂-CNFs), including mesopores and S-doping, are prepared by hydrothermal synthesis and sulfurizaiton. These unique nanocomposite electrodes exhibit a high specific capacity (159.6 F g^-1 at 10 mV s^-1), excellent high-rate performance (81.3 F g^-1 at 300 mV s^-1), and long-term cycling stability (55.9 % after 1,000 cycles at 100 mV s^-1). The increased specific capacity is attributed to well-dispersed WS₂ nanoparticles embedded in CNFs that the enlarge active area; the increased high-rate performance is contributed by reduced ion diffusion pathway due to mesoporous CNFs and improved electrical conductivity due to S-doped CNFs; the long-term cycling stability is attributed to the CNFs matrix including WS₂ nanoparticles, which effectively prevent large volume expansion.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.1-13
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• 1995

Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

• Journal of the Korean Electrochemical Society
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• v.17 no.4
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• pp.222-228
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• 2014

Ni-rich system $Li[Ni_{1-x-y}Co_xMn_y]O_2$ of lithium secondary battery cathode material keep a high discharge capacity. However, by the Ni content increases, there is a problem that the electrochemical properties and stability of the structure are reduced. In order to solve these problems, research for positive ion doping is performed. The one of the cathode material, barium-doped $Li[Ni_{0.6-x}Ba_xCo_{0.1}Mn_{0.3}]O_2$ (x=0.01), was synthesized by the precursor, $Ni_{0.6}Co_{0.1}Mn_{0.3}(OH)_2$, from the co-precipitation method. The barium doped materials have studied the structural and electrochemical properties. The analysis of structural properties, results of X-ray diffraction analysis, and those results confirmed the change of the lattice from the binding energy in the structure by barium doping. Increased stability of the layered structure was observed by $I_{(006)}+I_{(102)}/I_{(101)}$(R-factor) ratio decrease. we expected that the electrochemical characteristics are improved. 23 mAh/g discharge capacity of barium-doped $Li[Ni_{0.6-x}Ba_xCo_{0.1}Mn_{0.3}]O_2$ (x=0.01) electrode is higher than discharge capacity of $Li[Ni_{0.6}Co_{0.1}Mn_{0.3}]O_2$ due to decrease overvoltage. And, through the structural stability was confirmed that improved the cycle characteristics. We caused a reduction in charge transfer resistance between the electrolyte and the electrode was confirmed that the C-rate characteristics are improved.

• Journal of Mechanical Science and Technology
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• v.20 no.1
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• pp.1-12
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• 2006

This work reviews the effects of catalyst formulation and exhaust gas composition on soot oxidation in CDPF (Catalytic Diesel Particulate Filter). DOC's (Diesel Oxidation Catalysts) have been loaded with Pt catalyst (Pt/$Al_{2}O_3$) for reduction of HC and CO. Recent CDPF's are coated with the Pt catalyst as well as additives like Mo, V, Ce, Co, Fe, La, Au, or Zr for the promotion of soot oxidation. Alkali (K, Na, Cs, Li) doping of metal catalyst tends to increase the activity of the catalysts in soot combustion. Effects of coexistence components are very important in the catalytic reaction of the soot. The soot oxidation rate of a few catalysts are improved by water vapor and NOx in the ambient. There are only a few reports available on the mechanism of the PM (particulate matter) oxidation on the catalysts. The mechanism of PM oxidation in the catalytic systems that meet new emission regulations of diesel engines has yet to be investigated. Future research will focus on catalysts that can not only oxidize PM at low temperature, but also reduce NOx, continuously self-cleaning diesel particulate filters, and selective catalysts for NOx reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.494-498
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• 2009

The thermoluminescent phosphors of LiYSi$O_4$ containing rare earth metal(La) dopants of 1 wt.%5 wt.% were prepared, and their TL characteristics have been investigated as a function of parameters such as the doping level and the heating rate. The grain size and cooling temperature of the highly sensitive LiYSi$O_4$: La phosphors have been investigated. The glow curve of LiYSi$O_4$: La has two peaks ($P_1,\;P_2$), and the peak height ratio of the two peaks is called $P_2/P_1$; here, the main peak is $P_2$. Experimental results indicate that the peak height ratios of the glow curve for LiYSi$O_4$: La are clearly correlated with the grain size and cooling temperature. The maximum $P_2/P_1$ ratio 3.25, the maximum sensitivity was observed for a grain size between 100-150 ${\mu}m$. The intensity of the TL peak of the phosphors was linearly proportion to the dose of X-rays.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.83-88
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• 2011

Nano-technology is a super microscopic technology to deal with structures of 100 nm or smaller. This technology also involves the developing of $TiO_2$ materials or $TiO_2$ devices within that size. The aim of the present paper is to synthesize $WO_x$ doped nano-$TiO_2$ by the Sonochemistry method and to evaluate the effect of different percentages (0.5-5 wt%) of tungsten oxide load on $TiO_2$ in methylene blue (MB) elimination. The samples were characterized using such different techniques as X-ray diffraction (XRD), TEM, SEM, and UV-VIS absorption spectra. The photo-catalytic activity of tungsten oxide doped $TiO_2$ was evaluated through the elimination of methylene blue using UV-irradiation (315-400nm). The best result was found with 5 wt% $WO_x$ doped $TiO_2$. It has been confirmed that $WO_x-TiO_2$ could be excited by visible light (E<3.2 eV) and that the recombination rate of electrons/holes in $WO_x-TiO_2$ declined due to the existence of $WO_x$ doped in $TiO_2$.

• ETRI Journal
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• v.16 no.3
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• pp.1-10
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• 1994

Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.57-60
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• 2002

In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.