• The Korean Journal of Ceramics
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• 제4권2호
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• pp.103-113
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• 1998

By using a gas-tight electrochemical cell, we can perform high-temperature coulometric titration and measure electronic transport properties to determine the elecronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilitized zirconia(YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressure ($pO_2=10^{-35}$ to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria $(Ca-CeO_2 \;and\; CeO_2)$, copper oxides and copper-oxide-based ceramic superconductors, transition metal oxides, $SrFeCo_{0.5}O_x,\; and \;BaTiO_2$.

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• 한국세라믹학회지
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• 제32권1호
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• pp.45-50
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• 1995

In order to densify LAS(Lithuim Aluminosilicate)system compounds, we used metal alkoxides as precursors. Also Mg was added by sol-gel method using metal alkoxides to the LAS system for improving the sinterability, thermal and mechanical properties. The result was that the synthesizing temperature was lowered about 10$0^{\circ}C$, the sintering temperature was lowered by over 10$0^{\circ}C$ and MOR of samples from metal alkoxides was two times larger than that of sample form oxide.

• 한국세라믹학회지
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• 제50권6호
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• pp.439-445
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• 2013

Both an unreinforced $Al_2O_3$/Al matrix and a ${\alpha}-Al_2O_3$ particulate reinforced composite have been produced by the oxidation of an Al surface doped with NaOH in the absence of any other dopant. Fabrication of the matrix was initiated by the formation of $NaAlO_2$, which provides a favorable surface structure for the matrix formation by breaking the protective $Al_2O_3$ layer on Al. During the matrix growth, the external surface of the growth front was covered with a very thin sodium-rich oxide. A cyclic formation process of the sodium-rich oxide on the growth surface was proposed for the sodium-induced directed metal oxidation process. This process involves dissolution of the sodium-rich oxide, motion of Na to the growth front, and re-formation of the oxide on the surface. Near-net-shape composites were fabricated by infiltrating an $Al_2O_3$/Al matrix into a ${\alpha}-Al_2O_3$ particulate preform, without growth barrier materials. The infiltration distance increased almost linearly in the NaOH-doped preform.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• 한국재료학회지
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• 제15권3호
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• pp.209-215
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• 2005

Titanium dioxide films $(TiO_2)$ doped cobalt transition metal were prepared on titanium metal by water spray pyrolysis technique. Micro-morphology, crystalline structure, chemical composition and binding state of sample groups were evaluated using field emission scanning microscope(FE-SEM), X-ray diffractometer(XRD), Raman spectrometer, X-ray photoelectron spectrometer(XPS). $TiO_2$ films of rutile structure were predominately formed on all sample groups and $Ti_2O_3$ oxide was coexisted on the surface of cobalt doped-sample groups. The optical absorption peaks measured by using UV-VIS-NIR spectrophotometer were observed at specific wavelength region in sample groups doped cobalt ion. This result could be analyzed by introducing crystal field theory.

• 한국산학기술학회논문지
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• 제16권2호
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• pp.1555-1562
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• 2015

금속 산화물 반도체는 독특한 전기 광학적 특성, 높은 표면적 등으로 인해 태양전지, 센서, 광소자 및 디스플레이 등 여러 분야에 걸쳐 응용되고 있다. 금속 산화물 가운데 우수한 물리 화학적 특성을 가지는 산화아연은 3.37 eV의 넓은 밴드갭 에너지와 60 meV의 큰 엑시톤 결합에너지를 갖는 n-형 반도체로서 산화아연에 양이온을 도핑하여 전기 광학적 특성을 보완하는 연구가 진행되고 있다. 본 연구는 알루미늄이 도핑 된 산화아연을 마이크로파 수열합성법으로 합성하였다. 전구체의 종류와 몰 비 등의 반응 변수를 조절하여 최적의 결정형상과 광학적 특성을 갖는 산화아연을 합성하였으며, 알루미늄을 도핑하여 광학적 특성 변화를 시도하였다. 합성된 입자는 SEM, XRD, PL, UV-Vis 분광기 및 EDS 등의 기기분석을 통해 광학적, 물리 화학적 특성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• Korean Chemical Engineering Research
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• 제57권5호
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• pp.701-705
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• 2019

알칼라인 조건에서의 산소발생 반응(oxygen-evolution reaction: OER)은 다양한 에너지 시스템에 중요한 반응으로 여겨지고 있다. 큰 overpotential을 감소시키기 위해 다양한 촉매들이 개발되고 있으며, 그 중 NiO는 높은 활성도에 대한 가능성으로 인해 연구가 활발하게 진행되고 있다. 촉매의 표면에서 OER에 대한 메커니즘은 정확하게 규명되지는 않았지만, 산화물 촉매에서 Ni 또는 O vacancy와 같은 결함들은 많은 전기화학반응에서 활성점으로 여겨진다. 따라서, 본 연구에서는 nitrogen을 ethylenediamine을 이용하여 NiO의 O위치에 치환하여 Ni vacancy를 형성하고 그로 인해서 OER의 activity와 내구성에 어떠한 영향을 미치는지에 대해 분석해 보았다.

• 한국세라믹학회지
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• 제38권10호
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.