• Progress in Superconductivity
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• v.3 no.2
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• pp.188-192
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• 2002

To introduce flux pinning center in HTS-BSCCO system, nano-size MgO particles were uniformly distributed within the Bi-2223 grain by partial hydration of MgO. The existing method MgO doped Bi-2223 used nato-size MgO powders, which resulted in agglomeration during mixing or grain growth during heat-treatment due to the high surface energy of the fine particles. By hydration of the MgO surface, the agglomeration of the MgO powders was avoided and the size of remaining MgO core was controlled by changing hydration medium and time. The thin film obtained by spin coating of (Bi_$1.8/Pb_{0.4}$)$Sr_2$$_{Ca}$$2.2/Cu_3$ $O_{y}$ nitrate solution mixed with hydrated MgO showed the even distribution of nano-size MgO particles in the Bi-2212 grains.s.s.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.102.1-102
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1494-1495
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• 2009

Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride ($SiN_x$) was used as a gate dielectric material for the TFT. Source and drain electrodes were deposited on the $SiN_x$ layer and CIS layer was formed by a direct patterning method between source and drain electrodes. Nanoparticle of CIS material was used as the ink of the direct patterning method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.45-46
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• 2015

Se 원소가 포함된 $CuIn_xGa_{1-x}Se_2$(CIGS) 단일 스퍼터링 타겟을 이용하여 후처리 공정없이 단일 스퍼터링 공정만으로 CIGS 흡수층 박막을 증착하여 소자 특성을 확인하였다. 단일 CIGS 흡수층 공정이 적용된 CIGS 박막태양전지 소자(유리기판/Mo/단일 CIGS 흡수층 박막/CdS/i-ZnO/Al-doped ZnO/Ni-Al grid)에서 10.0%의 태양광 변환 효을을 달성하였으며, 이는 기존의 복잡한 공정구조를 해결하여 대면적 양산화 CIGS 제조 공정에도 적용할 수 있음을 확인하였다.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.448-460
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• 2018

Copper nanoparticle-doped and graphitic carbon nanofibers-covered porous carbon beads were used as an efficient catalyst for treating synthetic phenolic water by catalytic wet air oxidation (CWAO) in a packed bed reactor over 10-30 bar and $180-230^{\circ}C$, with air and water flowing co-currently. A mathematical model based on reaction kinetics assuming degradation in both heterogeneous and homogeneous phases was developed to predict reduction in chemical oxygen demand (COD) under a continuous operation with recycle. The catalyst and process also showed complete COD reduction (>99%) without leaching of Cu against a high COD (~120,000 mg/L) containing industrial wastewater.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.1
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.3
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• pp.165-172
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• 2006

On the MgO single crystals doped artificially with Cr, Cu, Fe we observed thermally stimulated luminescence(TSL) glow curves and spectra, and analyzed them in the temperatures range from at liquid nitrogen temperature(77K) to about 500K after excitation with UV or X-ray irradiation. TSL glow curves obtained from these samples show five peaks at 136.5K, 223.5K, 360K, 390K, 440K, and their estimated activation energies are 0.27eV, 0.63eV, 1.08eV, 1.08eV, 1.19eV, and 1.33eV, respectively. When we measured TSL spectrum at the range of 200nm to 650nm on the MgO single crystals. we also analyzed the peak wavelength which obtained at 345nm, 375nm, and 410nm from measurement of TSL spectrum and described their luminescence mechanisms. TSL spectrum peaks emitted from MgO:Cr, MgO:Cu, and MgO:Fe appear at the wavelengths of 345nm, 360nm, and 375nm, respectively.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.71-75
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• 2004

The technology of $C_{60}$ fullerite films preparation by means of gas-phase deposition and structure of fullerite films are described. A three-channel flow plant was used to obtain fullerite films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the plant. The plant allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene compounds and doped fullerenes. The structure of two types of films were investigated by FE-SEM and SEM techniques: pure fullerite films onto silicon and sapphire substrates as well as compound films were studied by FE-SEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerite films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isotropic pressure. The experiments with $C_{60}$-Cu-J films have shown quite strong dependence of their resistance on pressure of different sort of medium-gas that could be used in gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerite films are described.bed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Korean Journal of Materials Research
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• v.28 no.6
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• pp.317-323
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• 2018

Crystal structure of the $L1_2$ type $(Al,X)_3Ti$ alloy (X = Cr,Cu) is analyzed by X-ray diffractometry and the nonuniform strain behavior at high temperature is investigated. The lattice constants for the $L1_2$ type $(Al,X)_3Ti$ alloys decrease in the order of the atomic number of the substituted atom X, and the hardness tends to increase. In a compressive test at around 473K for $Al_{67.5}Ti_{25}Cr_{7.5}$, $Al_{65}Ti_{25}Cr_{10}$ and $Al_{62.5}Ti_{25}Cu_{12.5}$ alloys, it is found that the stress-strain curves showed serration, and deformation rate dependence appeared. It is assumed that the generation of serration is due to dynamic strain aging caused by the diffusion of solute atoms. As a result, activation energy of 60-95 kJ/mol is obtained. This process does not require direct involvement. In order to investigate the generation of serrations in detail, compression tests are carried out under various conditions. As a result, in the strain rate range of this experiment, serration is found to occur after 470K at a certain critical strain. The critical strain increases as the strain rate increases at constant temperature, and the critical strain tends to decrease as temperature rises under constant strain rate. This tendency is common to all alloys produced. In the case of this alloy system, the serration at around 473K corresponds to the case in which the dislocation velocity is faster than the diffusion rate of interstitial solute atoms at low temperature.