• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.48.2-48.2
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• 2010

고효율 실리콘 태양전지 개발은 단파장의 광 응답 특성 개선을 위한 선택적 에미터 형성과 반사 손실 개선을 위한 미세 패턴 전극을 형성하는데 집중적인 연구가 진행되고 있다. 본 실험에서는 레이저 도핑된 선택적 에미터 위에 미세 패턴 Ni/Cu 도금 전극을 형성하였다. 니켈과 동 도금은 무전해 Light induced plating(LIP)으로 진행하였다. 니켈 도금 전극의 접착력 개선과 접촉저항 개선을 위해서 니켈 전극을 질소 분위기에서 열처리하여 니켈실리사이드(NiSi)를 형성하였다. 니켈 도금 두께와 니켈실리사이드 열처리 조건을 최적화하여 충실도 77.4%, 변환효율 18.5%를 달성하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.579-581
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• 2004

A new DCM derivative containing the phenoxazine moiety (DCPXZ) has been synthesized for use as a red fluorescent dye molecule in organic light-emitting diodes (OLEDs). The photoluminescence and electroluminescence properties of DCPXZ were examined. The maximum photoluminescence of DCPXZ in chloroform solution ($10^{-5}$ mol) was observed at 616 nm. EL devices were fabricated with the structure ITO/PEDOT-PSS/Cu-PC(15nm)/${\alpha}$-NPD(45nm)/$Alq_3$:DCPXZ(30nm)/$Alq_3$(30nm)/LiF(0.5nm)/Al. The maximum EL emission for the 2.0% DCPXZ-doped device was at 608 nm with CIE coordinates (0.57, 0.42). The EL device exhibited a maximum brightness of 15,000 cd/$m^2$ at 19.4 V and a power efficiency of 1.04 lm/W at a luminance of 100 cd/$m^2$.

• Proceedings of the Korean Fiber Society Conference
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• 2003.10a
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• pp.71-72
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• 2003

The aim of our study is to prepare nanocomposites consisting polymer/inorganic nanoparticles and investigate their physical properties as a functional material. In this study, a nanocomposite of copper sulfide (CuS) nanoparticles introduced into a poly(acrylic acid) matrix was prepared and the optical absorption property was measured. The composite exhibited strong absorption of both ultraviolet and near-infrared rays, indicating that the composite is applicable to a solar radiation shielding filter. The wavelength of the near infrared absorption was controlled from ca.1000 nm to 1700 nm by heat and acidic solution treatments.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.968-971
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• 2002

Hole injection characteristics have been investigated with various metal anodes such as Ni, Pt, Cu, and AI for the top emission polymer light emitting diodes (PLEDs). Devices were composed of metal anode, Poly(3,4-ethylenedioxythiophene) doped with polystyrene sultponated acid (PEDT:PSS), poly [2-methoxy-5-(2-ethylhexyoxy)-1,4-phenylene-vinylene] (MEH-PPV) and Al cathode. The hole injection from ITO anode has been also investigated for the comparison. The I-V characteristics of the PLEDs with different metal anodes were measured. The work function of the anode is strongly related to the hole injection of the device. The current density of the device with Ni anode with higher work function was higher than that of the device with ITO or AI anode at the same operating voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1034-1037
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• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1030-1033
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• 2003

ZnS:Mn has been studied as a yellow phosphor for the application to fluorescent displays operated at low voltage. It was found that luminescence of $Mn^{2+}$ ion from hexagonal phase of ZnS was suitable for the display applications. The main emission peak was shifted to shorter wavelength when Cu ions were doped. The luminescence color of ZnS:Mn phosphor could be changed with decrease of its brightness.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.101-105
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• 1994

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.94-94
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• 2007