• 한국재료학회지
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• 제29권12호
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.870-875
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• 2011

The $(Na_{0.52}K_{0.44})(Nb_{0.9}Sb_{0.06})O_3-0.04dLiTaO_3$ (NKNS-LT) ceramics with various $Cu_2O$ concentration were prepared by the conventional solid state reaction method. The $Cu_2O$ content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when $Cu_2O$ concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the $Cu_2O$ amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of $Cu_2O$ concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor ($k_p$) was 0.42 and the piezoelectric charge constant ($d_{33}$) was 245 pC/N at the 0.3 wt% of $Cu_2O$ concentration.

• Transactions on Electrical and Electronic Materials
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• 제18권5호
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• pp.261-264
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• 2017

$Ni_{0.79}Co_{0.15-x}Cu_xMn_{2.06}O_4$ ($0{\leq}x{\leq}0.09$) thick films were fabricated using the conventional solid-state reaction method and screen-printing method. Structural and electrical properties of specimens based on the amount of Cu were observed in order to investigate their applicability in the infrared detector. All specimens showed a single spinel phase with a homogeneous cubic structure. As the amount of Cu increased, the average grain size increased and was found to be approximately $5.01{\mu}m$ for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen. The thickness of all specimens was approximately $55{\sim}56{\mu}m$. As Cu content increased, the resistivity and TCR properties at room temperature decreased, and these values for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen were $502{\Omega}-cm$ and $-3.32%/^{\circ}C$, respectively. The responsivity and noise properties decreased with an increase in Cu content, with the specimen with a Cu content of x=0.09 showing 0.0183 V/W and $5.21{\times}10^{-5}V$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 센서학회지
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• 제15권5호
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• pp.323-327
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• 2006

Manganese, copper and chlorine-doped ZnS phosphors (ZnS:Mn,Cu,Cl) were synthesized through solid-state reaction. Manganese was added in the range of amount $1.4{\sim}5.3$ mol % to ZnS phosphors containing 0.2 or 1.0 mol % of copper and a small amount of chlorine. As-synthesized phosphors showed a spherical morphology with a mean size of ${\sim}20\;{\mu}m$ and structural properties of Wurtzite, which were identified by SEM and XRD, respectively. Optical properties of ZnS:Mn,Cu,Cl synthesized with various concentrations of activators were analysed by both of PL and EL spectra. Samples mainly showing only 580 nm-orange emission by 380 nm-UV excitation gave different EL spectra of blue, green, and orange emissions at 450, 480 and 580 nm, respectively, depending on concentrations of $Cu^{2+}$ and $Mn^{2+}$.

• 한국재료학회지
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• 제28권10호
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.205-209
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• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.

• 한국광학회지
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• 제9권2호
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• pp.104-110
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• 1998

Cu 도핑된(0.04 wt.%) 광굴절 (K/sub 0.5/Na/sub 0.5/)/sub 0.2/(Sr/sub 0.61/Ba/sub 0.39/)/sub 0.9/Nb/sub 2/O/sub 6/ 결정에서 두 빔간의 에너지 교환특성을 632.8 nm He-Ne 레이저 파장에서 해석하고 측정하였다. 또한 신호빔 혹은 기준빔이 고주파에서 진폭 변조될 때 광유기된 굴절율 부피 격자의 코히어런트한 2광파 결합 특성을 해석하고 실험하였으며, 코히어런트 광통신 시스템 및 광신호처리 분야에서 동적 광굴절 결합기및 펄스 shaping 소자로 활용하기 위한 예비 실험 결과를 제시했다.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• 한국세라믹학회지
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• 제35권10호
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• pp.1007-1013
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• 1998

The samples of Bi2Sr2Ca1-xNaxCu2O8+y with various carrier concentration were synthesized by substituting Na for Ca ion. The superconducting properties hall coefficients and X-ray powder diffraction were measur-ed the sampled. Single phase samples were obtained for 0$\leq$x<0.3 of Bi2Sr2Ca1-xNaxCu2O8+y In the single phase the critical temperature. {{{{ { T}_{c } }} and carrier concentration increase with the increase of Na concentration pass through a maximum and then decreases. In the range of x$\geq$0.7 to the Na doped samples however we observed the metal-semiconductor transition. The c-axis seemed to decrease and a and b-axes increase with increasing Na concentration in the single phase. Decreasing of c-axis while increasing x is due to the smaller size of {{{{ {Na}^{+1 } }} ions to the {{{{ { Ca}^{+2 } }} ions. In the range of x>0.3 however the trend becomes ambiguous due to the inclusion of the 10K phase and impurity phase.