• Journal of the Korean Ceramic Society
• /
• v.45 no.12
• /
• pp.788-795
• /
• 2008

An electrolyte supported SOFC cell was tested at $800^{\circ}C$ in air for 3600 h with an applied current density of $200\;mA/cm^2$ to examine possible cathode degradation issues. A scandium- stabilized zirconia (ScSZ) with additional manganese doping (ScSZ: Mn) was used as electrolyte. A strontium and copper-doped lanthanum ferrite (LaSrCuFe) and platinum were used as cathode and quasi-anode material, respectively. The DC resistance was logged over the complete testing period. Additionally, impedance spectroscopy was used from time to time to track changes of the cell in-situ. Post-test analysis of the cell using methods like scanning electron microscopy imaging and other electrochemical testing methods allow the identification of different degradation sources. The results indicate a promising combination of electrolyte and cathode material in terms of chemical compatibility and electrical performance.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1239-1240
• /
• 2006

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductors. The electromagnetic properties of $Ag_2O$ doped and undoped BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers to the magnetic effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the $Ag_2O$ doped sample than that in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that Ag acts to increase pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.1
• /
• pp.25-31
• /
• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Journal of Electrical Engineering and Technology
• /
• v.2 no.1
• /
• pp.102-105
• /
• 2007

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductors. The electromagnetic properties of the $Ag_2O$ doped and undoped BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers to the magnetic effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the $Ag_2O$ doped sample than that in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that Ag acts to increase the pinning centers of the magnetic flux, contributing to the occurrence of the electromagnetic properties.

• Bulletin of the Korean Chemical Society
• /
• v.10 no.1
• /
• pp.23-26
• /
• 1989

EPR spectra of the high-temperature superconductor YBa_2Cu_3O_{7-x}$ doped with ytterbium have been measured at 77-300K. The superconducting, orthorhombic phase shows a spectrum at g = 2.08 (Spectrum O). As the temperature is lowered, another line ascribable to $Yb^{3+}$ grows gradually at g = 3.31. The intensity of Spectrum O was determined using Yb as the internal reference. The semiconducting, tetragonal phase shows a spectrum at g = 2.06 (Spectrum T), different from Spectrum O. The origins of these spectra are discussed.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.10
• /
• pp.908-911
• /
• 1995

The EPR spectra of Cu-or Zr-doped BaTiO3 ceramics exhibited absorption signals with g∥=2.380 and g⊥=2.063 which are assigned to Ba1+(Ba2+ + e'→Ba1+) ion reduced by an electron that was produced from the oxygen vacancy (VO..). The intensity of these signals decreased as the temperature increased indicating that Ba1+ was changed to Ba2+ as the temperature increased. These ceramics also showed the EPR signal with g=1.997 around TC which arises from ionized Ba-vacancies, VBa'(VBa + e'→VBa'. In the orthorhombic and tetragonal phase region g=1.997 signal was not seen. The electrons generating from the oxidation of Ba1+ and ionized Ba-vacancies may contribute to a space charge which is responsible for a dielectric relaxation of these samples.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.4
• /
• pp.514-519
• /
• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.141-141
• /
• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%.

• Electrical & Electronic Materials
• /
• v.7 no.3
• /
• pp.213-219
• /
• 1994

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.12a
• /
• pp.210-211
• /
• 2007