• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.691-696
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• 2004

The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.

• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.24-30
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• 1991

As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.241-244
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• 2002

The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.89-98
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• 1992

IIM(Implantation Into Metal) process usning Co silicides has been investigated to obtain ultra-shallow junctions less than 0.1$\mu$m. Rapid Thermal Annealing using halogen lamps was employed to form CoSi$_2$ and junctions simultaneously.. Resistivities of CoSi$_2$ were 13-17$\mu$ $\Omega$-cm. CoSi$_2$/p$^{+}$/Si and CoSi$_2$/n$^{+}$/Si junction were formed by diffusion of B and As, respectively, from Co film. It was found out that B and As were severely lost by the evaporation during high temperature annealing Therefore SiO$_2$ capping layers were introduced to prevent the evaporation of the implanted dopants from the films. Investigation of the behavior of dopants with respect to annealing time revealed that increasing the annealing time enhanced the diffusion of dopants into Si from CoSi$_2$.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.289-289
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• 2007

Spinel structured $LiMn_2O_4$ is more economic and environmental friendly to be used as commercial active material for secondary battery compared to Co-oxide material active material, but spinel structure of $LiMn_2O_4$ is unstable and its capacitance decreases with increase of cycle. Therefore, the purpose of our sturdy is to improve the stability of $LiMn_2O_4$ spinel structure and increase its capacitance by using substituents or dopants. $LiMn_2O_4$ powder was synthesized by charging substituents or dopants mole fractions, and temperatures. Crystal state, structure and specific surface area of the synthesized powder were measured and also characteried electrochemically by measuring its impedance, charge-discharge capacitance and etc.

• Membrane Journal
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• v.6 no.4
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• pp.258-264
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• 1996

Polyanilines were prepared by the oxidative polymerization in the presence of ammonium persulfate as an oxidant. After dehydration, a doping was carried out by mixing the polymer solution with dopants and immersing into aqueous dopant solutions. Using various riopants, the d-spacing of polyanilines can be controlled from $3.72{\AA}$ to $4.844{\AA}$. The d-spacing of polyanilines with polymeric or bulky dopants was larger than that of as-cast polyaniline. The characterization of the physical properties were confirmed by Fourier transform infrared spectroscopy (FT-IR), differential scanning calorimetry (DSC), dielectric analyzer (DEA) etc. Annealed polyaniline membrane exhibited the oxygen permeability of 0.072 barrer and the oxygen selectivity to nitrogen was 6.87. For the gas separation of polyanilines with polymeric or bulky riopants, the permeability increased while the selectivity detereased. Permeability can be readily controlled by the use of bulky dopants.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1205-1211
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• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.287-304
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• 1986

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.