• 한국분말재료학회지
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• 제31권1호
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• pp.50-56
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• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• 한국세라믹학회지
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• 제25권4호
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• pp.390-398
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• 1988

Effects of atmospheres and adidtives on the grain growth of TiO2 ceramics were investigated. In the range of 1300~140$0^{\circ}C$, grain growth was increased in CO2 as compared with O2 atmosphere and the grain boundary migration activation energy was lower than the diffusion activation energy of oxygen ion in TiO2. Also, in the case of addition of oxides, the grain growth was increased by oxides acting as a acceptor andinhibited by oxides acting as a donor. From the above results, when the oxygen vacancy concentration was increased, the intrinsic grain boundary mobility was increased and the pore drag force was decreased due to the rapid densification. Also it seems that the pore was migrated by the surface diffusion rather than lattice diffusion.

• The Korean Journal of Ecology
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• 제16권2호
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• pp.181-190
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• 1993

To elucidate phytotoxic effects on the growth of receptor plant, germination and growth experiment of selected species have been performed with aqueous extracts and volatile substances of leaf and of donor plant, Thuja orientalis. The extracts of T. inversely proportional to the concentration. Gas chromatography method was employed for analysis and indentification of phytotoxic substances from T. orientalis. Forty-two kinds of KDICicals including ${\alpha}-thujone$ were identified from T. orientalis essential oil. Bioassay was performed with 6 KDICical such as ${\alpha}-pinene, \;{\alpha}-terpinene, \;{\gamma}-terpinene, \; {\beta}-myrcene$, and among them bornyl acetate was the strongest growth inhibitor.

• The Korean Journal of Ecology
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• 제12권3호
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• pp.161-170
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• 1989

To verify allelopathic effects of Artemisia princeps var. orientalis, a number of laboratory experiments have been performed. Aqueous extracts of leaves, stems and roots of the above species inhibited the seed germination and seedling growth of experimental species, receptor plants. In general, the higher was the concentration of the extracts, the lower was the germination and the growth ratio. Volatile substances released from leaves of the donor plants also inhibited the seed germination and the radicle elongation of receptor plants. Therefore, to find out the inhibitory substances emitted from the wormwood, gas chromatography was employed. As a result of the analysis, 17 KDICical substances were isolated from the leaves and most of them were identified as phenolic compounds.

• 한국결정성장학회지
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• 제18권4호
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Journal of Microbiology and Biotechnology
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• 제11권3호
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• pp.406-411
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• 2001

In a bacterial denitrification test with Pseudomonas sp. and anaerobic consortium, more nitrates and less substrate were consumed but less metabolic nitrite was produced under an anaerobic $H_2$ condition rather than under $N_2$ condition. In a bioelectrochemical denitrification test with the same organisms, the electrochemically reduced neutral red was confirmed to be a substitute electron donor and a reducing power like $H_2$. The biocatalytic activity of membrane-free bacterial extract, membrane fraction, and intact cell for bioelectrochemical denitrification was measured using cyclic voltammetry. When neutral red was used as an electron mediator, the electron transfer from electrode to electron acceptor (nitrate) via neutral red was not observed in the cyclic voltammogram with the membrane-free bacterial extract, but it was confirmed to gradually increase in proportion to the concentration of nitrate in that of the membrane fraction and the intact cell of Pseudomonas sp.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.946-952
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• 2002

The electrical and dielectric characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1∼3 h. Increasing sintering time deteriorated the nonlinearity, in which nonlinear exponent is decreased from 51.2 to 23.8 and leakage current is increased from 1.3 to 5.6 $\mu$A. As sintering time increases, the donor concentration was decreased in the range of (1.25∼l.73)$\times$10$\^$18/cm$\^$-3/ and the density of interface states is (3.64∼94.19)$\times$10$\^$12/cm$\^$-2/ with increasing sintering time. The increase in sintering time caused tan $\delta$ to increase in the range of 0.043 to 0.062 and relaxation time to increase in the range of 1.55 to 2.23 ㎲.

• 한국식물병리학회지
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• 제12권2호
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• pp.156-161
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• 1996

세계적으로 구리약제에 대해서 저항성을 나타내는 균주들이 발견되있으며, 이들은 구리약제의 방제효과를 감소시켰다. 국내에서도, 구리 저항성 균주 Xanthomonas campestris. pv. vesicatoria HN94-2, -3, -4, -5, -6 들이 천안지역의 고추재배지에서 처음으로 분리되었으며, 이들 균주들의 nutrient agar에서 황산구리(CuSo\ulcorner)에 대한 최소억제농도(minimum inhibitory concentration, MIC)는 1.4~1.6 mM이었다. 이들은 모두 황산아연(ZnSO\ulcorner)에 대해서는 감수성을 보여, 구리저항성 균주에 대한 방제약제로서 아연 함유 약제를 사용할 수 있을 것이다. 분리된 균주중 HN94-2와 HN94-6을 이용하여 접합(conjugation)을 통해 구리저항성의 전파를 실험한 결과, 이들 두 균주 모두 구리감수성 균주에게 4.3$\times$10\ulcorner에서 1.0$\times$10\ulcorner(transconjugant/donor)의 정도로 구리 저항성이 전이되었다. 이들 HN94-2와 HN94-6 균주의 구리정항성 유전자들은 약 200 kb 정도의 커다란 플라스미드(plasmid)에 존재하며, 이들은 각각 pXVK9402와 pXVK9406이라 명명되었다.