• Korean Journal of Radiology
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• v.25 no.3
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• pp.224-242
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• 2024

The emergence of Chat Generative Pre-trained Transformer (ChatGPT), a chatbot developed by OpenAI, has garnered interest in the application of generative artificial intelligence (AI) models in the medical field. This review summarizes different generative AI models and their potential applications in the field of medicine and explores the evolving landscape of Generative Adversarial Networks and diffusion models since the introduction of generative AI models. These models have made valuable contributions to the field of radiology. Furthermore, this review also explores the significance of synthetic data in addressing privacy concerns and augmenting data diversity and quality within the medical domain, in addition to emphasizing the role of inversion in the investigation of generative models and outlining an approach to replicate this process. We provide an overview of Large Language Models, such as GPTs and bidirectional encoder representations (BERTs), that focus on prominent representatives and discuss recent initiatives involving language-vision models in radiology, including innovative large language and vision assistant for biomedicine (LLaVa-Med), to illustrate their practical application. This comprehensive review offers insights into the wide-ranging applications of generative AI models in clinical research and emphasizes their transformative potential.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.944-948
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• 1999

The morphological properties of four binary blends of polyethylene synthesized by metallocene catalyst(MCPE) and four polyolefins prepared by Ziegler-Natta catalyst have been investigated to interpret the effect of micro-molecular structure on the phase morphology and interfacial behavior; four binary blend systems studied are high density polyethylene(HDPE)-metallocene polyethylene (MCPE), polypropylene(PP)-MCPE, poly(propylene-co-ethylene) (CoPP)-MCPE, and poly(propylene-co-ethylene-co-1-butylene) (TerPP)-MCPE, and they are all phase separated. The HDPE-MCPE blend shows evenly growing homogeneous HDPE domain on the continuous MCPE phase, on the other hand, the rest of three blends show complex heterogeneous phase behavior. The PP-MCPE blend shows that PP and MCPE and completely phase separated and phase inversion takes place at 50% MCPE. The CoPP-MCPE and TerPP-MCPE show enhanced interface due to the same micro-molecular structure of ethylene, and phase inversion takes place at 40% MCPE. In particular, TerPP-MCPE blend shows improved phase morphology between interfaces, and this may be arisen from the comonomer contents in TerPP, which are 1-butene and ethylene having the same chemical structure as that of MCPE. The enhancement of the phase morphology in the TerPP-MCPE blend is correlated with the mechanical and morphological properties. Thus, although the four blend systems are phase separated, the phase morphology suggests that the order of interfacial adhesion strength be HDPE-MCPE > TerPP-MCPE > CoPP-MCPE > PP-MCPE and that micro-molecular structure between constituents be one of major factors giving enhanced interfacial adhesion.

• Journal of the Korean Geotechnical Society
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• v.21 no.4
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• pp.71-81
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• 2005

Surface wave techniques were initially based on 2-D plane waves and were later improved to the techniques based the 3-D based cylindrical waves. However, body-wave interference, near-field effect and limited technology in surface wave measurements restricted the use of 3-D cylindrical waves to the 1-D evaluation of subgrade stiffness. In this study, by the numerical simulation of SASW measurements, the dispersion properties of surface waves including vertical, horizontal Rayleigh waves and Love waves were thoroughly investigated in the 3-D domain, and a new filter criteria to minimize the near-field effect was established, which led to CAP (common-array-profiling)-SASW technique. The CAP-SASW technique enabled the evaluation of subgrade stiffness fur a specific subgrade segment, not for a whole section of measurement array. Therefore, a contour plot of subgrade stiffness with a ground-truth quality can be obtained by the CAP-SASW technique. The procedure proposed in this study was verified by comparing the shear-wave velocity profiles with the shear-wave velocity profiles of downhole testing at two geotechnical sites.

• Economic and Environmental Geology
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• v.34 no.1
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• pp.147-156
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• 2001

Titanomagnetites, the primary magnetic mineral in submarine basalts, generally has undergone some degree of low temperature oxidation to cation-deficient titanomaghemites. Synthetic analogues of natural titanomaghemite have been prepared by the removal of iron mechanism employing a low-temperature aqueous oxidation method. Along with the low-temperature oxidation of titanomagnetite, magnetic properties of titanomagnetite change sensitively. The results show that as the degree of oxidation increases, the Curie temperature (Tc) increases from $166^{\circ}C$ to $400^{\circ}C$, saturation magnetization (Ms) at room temperature decreases from 126.30 kAlm (25.26 emu/g) to 16.55 kAlrn (3.31 emu/g) monotonously, and coercive force (Hc) and coercivity of remanence (Hcr) increase from 6.13 kAlm (77 Oe) and 23.24 kAlm (292 Oe) to 38.83 kNm (488 Oe) and 47.03 kAlm (591 Oe), respectively. Low field susceptibility (X) decreases from $2023{\times}10^{-6}SI$ to $84{\times}10^{-6}S1$. Based on the results of this study, it is interpreted that the NRM intensity variations of the oceanic crust of presetnt day to 30 Ma is due to the formation of titanomahemites of various degree of oxidation by the low-temperature aqueous oxidation of titanomagnetite, while the magnetic intensity changes of the oceanic crust older than 30 Ma is presumably caused by the combined effect of the formation of titanomaghemites and subsequent inversion of titanomagnemites. DetaileJ causes of the variations of NRM intensity of the oceanic crust may be revealed by systematic studies of the oceanic-floor basalts in the future.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.34 no.3
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• pp.167-174
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• 2021

Recent investigation into the integrity of nuclear containment buildings has highlighted the importance of developing an elaborate diagnostic method to evaluate the distribution and size of cavities inside concrete walls. As part of developing such a method, this paper presents a finite element approach to modeling elastic waves propagating in the containment building walls of a nuclear power plant. We introduce a perfectly matched layer (PML) wave-absorbing boundary to limit the large-scale nuclear containment wall to the region of interest. The formulation results in a semi-discrete form with symmetric damping and stiffness matrices. The transient elastic wave equations for a mixed unsplit-field PML were solved for displacement and stresses in the time domain. Numerical results show that the sensitivity of displacement, velocity, acceleration, and stresses is large depending on the size and location of the cavity. The dynamic response of the wall slightly differs depending on the existence of the containment liner plate. The results of this study can be applied to a full-waveform inversion approach for characterizing cavities inside a containment wall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).