• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1047-1051
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• 1997

CH$_{4}$와 H$_{2}$의 혼합가스에 미량의 질소와 산소를 첨가하여 rf-플라즈마 CVD법으로 DLC막을 합성하였다. 이 때 챔버내 압력은 430mtorr, 기판에 인가된 전력은 80W였으며, H$_{2}$와 CH$_{4}$의 비율은 1:1이었다. 이 시편들에 대해 가시광선 영역과 자외선 영역에서의 투과도를 비교하였으며, 결합구조의 변화를 알아보기 위하여 FTIR 분석을 실시하였다. 질소의 경우 첨가량이 6.3%에서 17.4%으로 증가됨에 따라 전체적인 투과도값이 증가하였으며, FRIR 분석결과 wavenumber 3500 $cm^{-1}$ /의 위치에 N-H stretching band가 나타나고 2300$cm^{-1}$ /에는 nitrile의 피크가 나타났다. 이 피크들의 존재는 질소의 첨가에 의하여 interlink를 감소시킴으로써 막의 잔류응력을 현저히 감소시킬 수 있음을 의미한다. 2% $O_{2}$를 첨가한 경우 막의 투과도는 질소를 첨가한 경우보다 월등히 더 향상되었다. 질소첨가량을 증가시킴에 따라 optical band gap또한 증가되는 경향을 보였으며, 2% $O_{2}$를 첨가하였을 때 막의 optical band gap은 0.5까지 감소하였다.

• Information and Communications Magazine
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• v.15 no.11
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• pp.124-142
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• 1998

ETSI BRAN (Broadband Radio Access Network)는 고속 무선 LAN 또는 고정 광대역 무선액세스 네트워크에서의 무선 접촉 계층과 ATM 및 IP(Internet Protocol) 코어 네트워크와의 연동을 위한 일부 기능을 표준화하기 위한 과제이다. 특히, BRAN의 HIPERLAN type-2(HIPERLAN/2)의 경우에는 과제의 범위는 무선 접속면, 무선 부시스템에서의 서비스 인터페이스, 서비스 구현에서 요구되는 연동 및 각종 지원 기능을 표준화하며, 무선 접속면의 경우에는 다수 벤더간의 상호 호환성을 제공할 수 있는 인터페이스를 구현하는 것이다. HIPERLAN/2의 기술 규격은 코어 네트워크와 독립적인 물리계층 및 데이터 링크 제어 (DATA Link Control: DLC) 계층과 서로 상이한 코어 네트워크와의 연동을 위한 네트워크 수렴 부계층을 다루게 될 것이며, 초기 단계에서는 ATM과 IP 코어 네트워크와의 연동 기능을 제시하게 될 것이다. 따라서 HIPERLAN/2기반의 시스템 규격을 제시하기 위해서는 네트워크 계층 및 기타 상위 계층에 대한 규격이 요규되며, 이는 ATM Forum에서의 무선 ATM 신호 방식 규격, IETF(Internet Engineering Task Force)의 IP규격, 그리고 ETSI의 SMG (Special Mobile Group) 프로젝트에서 표준화되고 있는 UMTS (Universal Mobile Telecommunication Service) 규격 등과 접목될 것이다. 결과적으로 무선 ATM 관점에서는 완전한 시스템 규격 작성은 ETSI BRAN과 ATM Forum에서 무선 접속 규격과 이동성 관리 및 신호 방식으로 각각 이원화되어 진행되고 있다. 현재 물리 계층에서의 전송 방식은 OFDM(Orthogonal Frequency Division Multiplexing)으로 확정되었으며, DLC 계층에서는 고정 길이의 TDD (Time Division Duplexing) TDMA 프레임 구조를 기반으로 AP (Access Point)에 의해 동적으로 상향 링크 자원을 예약 할당하는 매체 접근 제어 (Medium Access Control: MAC) 프로토콜이 고려되고 있다. 이와 같은 DLC 계층에서는 기본적으로 짧은 길이의 패킷을 통해 다양한 대역폭의 멀티미디어 트래픽을 효율적으로 수용하면서 ATM 네트워크뿐만 아니라 향후 IP 네트워크에서 요구하는 각 서비스별 QoS (Quality of Service)를 개별적으로 보장할 수 있는 기능을 구현하고자 한다. 향후 이 부문에 대한 표준화가 본격적으로 진행될 것으로 예상되며 HIPERLAN/2의 경우에는 1999년 중반까지 1차 기능 규격을 완료할 예정이며, BRAN 전반에 대한 완전한 규격을 2002년까지 완성하는 것을 목표로 하고 있다.

• Journal of Energy Engineering
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• v.14 no.1
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• pp.46-53
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• 2005

This paper presents a new approach for determining an accurate incentive levels of Direct Load Control (DLC) program using probabilistic techniques. The economic analysis of DLC resources needs to identify the hourly-by-hourly expected energy-not-served resulting from the random outage characteristics of generators as well as to reflect the availability and duration of DLC resources, which results the computational explosion. Therefore, the conventional methods are based on the scenario approaches to reduce the computation time as well as to avoid the complexity of economic studies. In this paper, we have developed a new technique based on the sequential Monte Carlo simulation to evaluate the required expected load control amount in each hour and to decide the incentive level satisfying the economic constraints. In addition, we have applied the variance reduction technique to enhance the efficiency of the simulation. To show the efficiency and effectiveness of the suggested method, the numerical studies have been performed for the modified IEEE 24-bus reliability test system.

• Tribology and Lubricants
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• v.32 no.4
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• pp.125-131
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• 2016

In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• The Journal of Korean Academy of Prosthodontics
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• v.46 no.2
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• pp.209-216
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• 2008

Statement of problem: It is difficult about assessing the loosening tendency of conical connection type implant after cyclic loading with diamond like carbon coating one-piece abutments, and also about the retightening effect. Purpose: This study was performed to investigate the influence of one-piece abutment screw retightening after $5.0{\times}10^{4}$ cyclic loading and Diamond like coating Material and methods: Thirty two ITI implant were divided to 4 groups. Group 1,3-titanium abutment, group 2,4 - diamond like carbon coated abutment. Group 1,2 - $20.0{\times}10^{4}$ cyclic loading after $5.0{\times}10^{4}$ cyclic loading, Group 3,4- after $20.0{\times}10^{4}$ Cyclic loading. After cyclic loading, periotest values were taken and removal torque values of abutments were measured with a digital torque gauge. Results: 1. The removal torque of group 2 after $5.0{\times}10^{4}$ cyclic loading is slightly greater than the other groups but not significantly higher than others (P>0.05). 2. The final removal torque values after $20.0{\times}10^{4}$ cyclic loading of group 1 is bigger than group 3, and group 2 is bigger than group 4, but not significantly higher (P>0.05). 3. The final removal torque values after $20.0{\times}10^{4}$ cyclic loading of all groups are not significantly different (P>0.05).

• Journal of Integrative Natural Science
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• v.13 no.3
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• pp.87-91
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• 2020

Molybdenum carbide (MoC_x) thin films (TFs) were deposited by reactive radio frequency (rf) magnetron co-sputtering in high vacuum chamber. We compared the properties of MoC_x thin films as the rf power changed on C target. The result of alpha step measurement showed that the thickness of the MoC_x TFs varied from163.3 to 194.86 nm as C power was increased from 160 to 200 W. The crystallinity of MoC_x such as b-Mo₂C, Mo₂C, and diamond like carbon (DLC) structures were observed by XRD. The oxidation states of Mo and C were determined using high resolution XPS spectra of Mo 3d and C 1s were deconvoluted. Molybdenum was consisted of Mo, Mo⁴⁺, and Mo⁶⁺ species. And C was deconvoluted to C-Mo, C, C-O, and C=O species.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.