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증강현실을 이용한 공간배치 애플리케이션 개발 (Smart device applications development using augmented reality)

  • 박근홍;권두위;박수현
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2013년도 춘계학술대회
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    • pp.305-306
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    • 2013
  • 현재 시장의 구매활동은 소비자가 직접 물건을 보고 구입하거나 인터넷을 통해 물품의 이미지를 보고 구입을 하는 형태이다. 특히 침구류, 가구, 조명 등과 같은 물품들은 실제로 배치할 곳에 놓아 보고 싶은 요구가 있다. 이에 따라 대중화된 스마트기기에서 물품을 미리 배치하고 해당 정보를 볼 수 있도록 함으로써 구매자의 요구를 충족시키고 삶의 질을 향상시킬 필요가 있다. 따라서 본 연구에서는 증강현실을 이용하여 공간배치 애플리케이션을 개발하고 이를 통해 변화하는 스마트사회에서 새로운 구매방식을 제안한다.

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바이오융합 및 의료기기 산업 (Bio-fusion and Medical Device Industry)

  • 박수아;이준희;김완두
    • 대한기계학회논문집 C: 기술과 교육
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    • 제5권1호
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    • pp.23-52
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    • 2017
  • 바이오융합 및 의료기기 산업은 의학과 전기, 전자, 기계, 재료 등 공학이 융합되는 다학제간 응용기술 산업분야이다. 바이오 융합 및 의료기기를 이용해 인간의 삶의 질 향상을 목표로 하고 있으며 제품에 대한 인지도와 브랜드 파워가 매우 중요한 산업이다. 그러나, 자본/기술 의존형 산업으로 제품의 개발부터 생산까지 소요되어지는 기간이 길고 개별 제품의 시장 규모가 작고 수명주기가 짧다고 할 수 있다. 따라서 연구개발에 대한 지속적인 투자가 요구되어지는 산업으로 국가적인 차원에서 바이오벤처 기업들을 위해 기술적 지원, 제도적 뒷받침, 인력 양성 등의 산업생태계 전반을 활성화하고자 하는 노력이 필요하다.

여러 가지 높이를 갖는 삼각형 구조 InGaAs/GaAs 양자세선 구조 성장 (Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structure with Various Thicknesses in One Chip)

  • 김성일;김영환;한일기
    • 한국재료학회지
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    • 제14권6호
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    • pp.399-401
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    • 2004
  • InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

쵸크랄스키 Silicon 단결정의 Large Pit과 Flow Pattern defect의 열적 거동과 Large Pit의 소자 수율에의 영향 (Thermal Behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Effects of Large Pit upon Device Yield)

  • 송영민;문영희;김종오;조기현
    • 한국재료학회지
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    • 제11권9호
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    • pp.781-785
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    • 2001
  • The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ($\geq$$1100^{\circ}C$) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 $\mu\textrm{m}$, LP seemed not to have detrimental effects on the performance/yield.

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An On-Chip Differential Inductor and Its Use to RF VCO for 2 GHz Applications

  • Cho, Je-Kwang;Nah, Kyung-Suc;Park, Byeong-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권2호
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    • pp.83-87
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    • 2004
  • Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

The Influence of Noise Environment upon Voice and Data Transmission in the RF-CBTC System

  • Kim, Min-Seok;Lee, Sang-Hyeok;Lee, Jong-Woo
    • International Journal of Railway
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    • 제3권2호
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    • pp.39-45
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    • 2010
  • The RF-CBTC (Radio Frequency-Communication Based Train Control) System is a communication system in railroad systems. The communication method of RF-CBTC system is the wireless between the wayside device and on-board device. The wayside device collects its location and speed from each train and transmits the distance from the forwarding train to the speed-limit position to it. The on-board device controlling device controls the speed optimum for the train. In the case of the RF-CBTC system used in Korea, transmission frequency is 2.4 [GHz]. It is the range of ISM(Industrial Scientific and Medical equipment) band and transmission of voice and data is performed by CDMA (Code Division Multiple Access) method. So noises are made in the AWGN (Additive White Gaussian Noise) and fading environment. Currently, the SNR (Signal to Noise Ratio) is about 20 [dB], so due to bit errors made by noises, transmission of reliable information to the train is not easy. Also, in the case that two tracks are put to a single direction, it is needed that two trains transmit reliable voice and data to a wayside device. But, by noises, it is not easy that just a train transmits reliable information. In this paper, we estimated the BER (Bit Error Rate) related to the SNR of voice and data transmission in the environment such as AWGN and fading from the RF-CBTC system using the CDMA method. Also, we supposed the SNR which is required to meet the BER standard for voice and data transmission. By increasing the processing gain that is a ratio of chip transmission to voice and data transmission, we made possible voice and data transmission from maximally two trains to a wayside device, and demonstrated it by using Matlab program.

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Bipolar Transport Model of Single Layer OLED for Embedded System

  • Lee, Jung-Ho;Han, Dae-Mun;Kim, Yeong-Real
    • 한국정보기술응용학회:학술대회논문집
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    • 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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    • pp.237-241
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    • 2005
  • We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

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ICC Profile에 기반한 CCD 입력장치의 장치독립적 색재현에 관한 연구 (A Study on the Device Independent Color Reproduction of CCD Input Devices based the ICC Profile)

  • 송경철;신춘범;강상훈
    • 한국인쇄학회지
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    • 제23권1호
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    • pp.27-36
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    • 2005
  • Most of flated scanners and digital cameras in prepress process utilize CCD technology. Device calibration and characterization process is needed to transform the device dependent color to the device independent color. ICC profiles for digital input devices encapsulated information relating the device values to CIELAB or CIEXYZ coordinates. The main purposes of this article is to evaluate some of the transformation methods based on ICC proposed device profiles and to propose optimal color transformation method for accurate color imaging in printing process.

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VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT

  • Lee, Sang-Heung;Park, Chan-Woo;Lee, Seung-Yun;Lee, Ja-Yol;Kang, Jin-Yeong
    • 한국통신학회논문지
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    • 제28권8A호
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    • pp.650-656
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    • 2003
  • In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.