• Title/Summary/Keyword: Division Device

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Development of High Performance Backlight Unit Employing EEFL

  • Yoo, Hyeong-Suk;Kang, Moon-Shik;Lim, Jong-Sun;Lee, Keun-Woo;Oh, Weon-Sik;Park, Jong-Dae;Kang, Sung-Chul
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.835-837
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    • 2002
  • The 17" Backlight Unit (BLU) employing twelve EEFLs (External Electrode Fluorescent Lamp) has been developed for LCD-TV The characteristics of the EEFL BLU without dual brightness enhancement film (DBEF) were equivalent to those of CCFL (Cold cathode Fluorescent Lamp) BLU employing eight CCFLs with DBEF. Luminance, power consumption and uniformity were 12,000nits, 32watt and 80%, respectively. The inverter of EEFL Backlight Unit is composed of 2 transformers and driven by the sinusoidal waveform.

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New Material Architecture and Its Process Integration for a-Si TFT Array Manufacturing

  • Song, Jean-Ho;Park, Hong-Sick;Kim, Sang-Gab;Cho, Hong-Je;Jeong, Chang-Oh;Kang, Sung-Chul;Kim, Chi-Woo;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.552-555
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    • 2002
  • In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

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Development of Automatic Sacking Device for the Combine Harvester (콤바인 곡물 포대 자동이송장치 개발)

  • 김철수;김기동;조기현;이정택;김진현
    • Journal of Biosystems Engineering
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    • v.28 no.6
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    • pp.491-496
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    • 2003
  • This study was performed to develop an automatic sacking device for the combine harvester which was constituted input/output signal system, controller, delivery device, shooting device, pneumatic system for shooting operation, vibration device fer sacking operation and a new developed sacking bag. A new developed automatic sacking device and new sacking bag were operated well in general. And they were possible to develop a new combine to reduce of fatigue, to improve the safety and the performance. In developed device, The optimum delivery velocity of conveyer for sacking was 5.16 mm/sec. In sacking device, sacking discharge was shown 94% with non-vibration condition and sacking discharge was shown 99% with vibration condition, respectively.

Development of New LTPS Process

  • Yi, Chung;Park, Kyung-Min;Choi, Pil-Mo;Kim, Ung-Sik;Kim, Dong-Byum;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1024-1026
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    • 2004
  • We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

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Correlation between spin density and Vth instability of IGZO thin-film transistors

  • Park, Jee Ho;Lee, Sohyung;Lee, Hee Sung;Kim, Sung Ki;Park, Kwon-Shik;Yoon, Soo-Young
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1447-1450
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    • 2018
  • The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

Numerical Analysis of Deep Seawater Flow Disturbance Characteristics Near the Manganese Nodule Mining Device (망간단괴 집광기 주위 해수 유동교란 수치해석)

  • Lim, Sung-Jin;Chae, Yong-Bae;Jeong, Shin-Taek;Cho, Hong-Yeon;Lee, Sang-Ho
    • Ocean and Polar Research
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    • v.36 no.4
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    • pp.475-485
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    • 2014
  • Seawater flow characteristics around a manganese nodule mining device in deep sea were analyzed through numerical investigation. The mining device influences the seawater flow field with complicated velocity distributions, and they are largely dependent on the seawater flow speed, device moving speed, and injection velocity from the collecting part. The flow velocity and turbulent kinetic energy distributions are compared at several positions from the device rear, side, and top, and it is possible to predict the distance from which the mining device affects the seawater flow field through the variation of turbulent kinetic energy. With the operation of the collecting device the turbulent kinetic energy remarkably increases, and it gradually decreases along the seawater flow direction. Turbulent kinetic energy behind the mining system increases with the seawater flow velocity. The transient behavior of nodule particles, which are not collected, is also predicted. This study will be helpful in creating an optimal design for a manganese nodule collecting device that can operate efficiently and which is eco-friendly.