BLT 박막을 사용한 강유전 반도체 메모리

  • Yang, B. (Kumoh National Institute of Technology, Department of Materials Science and Engineering) ;
  • Lee, S.S. (Memory R & D Division, FeRAM Device Team, Hynix Semiconductor) ;
  • Noh, K.H. (Memory R & D Division, FeRAM Device Team, Hynix Semiconductor) ;
  • Kim, N.K. (Memory R & D Division, FeRAM Device Team, Hynix Semiconductor) ;
  • Kweon, S.Y. (Memory R & D Division, FeRAM Device Team, Hynix Semiconductor) ;
  • Yeom, S.J. (Memory R & D Division, FeRAM Device Team, Hynix Semiconductor)
  • Published : 2003.10.17