• Structural Engineering and Mechanics
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• v.57 no.1
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• pp.91-103
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• 2016

This investigation is concerned with the disturbances in a homogeneous transversely isotropic thermoelastic rotating medium with two temperature, in the presence of the combined effects of Hall currents and magnetic field due to normal force of ramp type. The formulation is applied to the thermoelasticity theories developed by Green-Naghdi Theories of Type-II and Type-III. Laplace and Fourier transform technique is applied to solve the problem. The analytical expressions of displacements, stress components, temperature change and current density components are obtained in the transformed domain. Numerical inversion technique has been applied to obtain the results in the physical domain. Numerically simulated results are depicted graphically to show the effects of Hall current and anisotropy on the resulting quantities. Some special cases are also deduced from the present investigation.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.125-130
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• 2002

An attempt was made for the application of porous reticular metal to a heat dissipation material in semiconductor process. For this aim, the electrodeposition of Fe/Ni alloy on the porous reticular Cu has been performed to minimize the thermal expansion mismatch between Cu skeleton and electronic chip. Preliminary tests for the electrodeposition of Fe/Ni alloy layer were conducted by using standard Hull Cell to examine the effect of current density on the composition of alloy layer. It seemed that mass transfer affected significantly the composition of Fe/Ni layer due to anomalous codeposition in the electrodeposition of Fe/Ni alloy. A paddle type stirring bath, which was employed to control the mass transfer of electrolyte in the work, was found to allow the electrodeposition Fe/Ni with a precise composition. result showed that the thermal expansion of Fe/Ni alloy layer was much lower than that of pure copper. From the tests of heat dissipation by using the apparatus designed in the work the heat dissipation material fabricated in the work showed the excellent heat dissipation capacity, namely, more than two times as compared to that of pure copper plate.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.41.3-42
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• 2016

No matter how intense magnetic flux it contains, a coronal magnetic structure has little free magnetic energy when a composing magnetic field is close to a potential field, or current-free field where no volume electric current flows. What kind of electric current system is developed is therefore a key to evaluating the activity of a coronal magnetic structure. Since the corona is a highly conductive medium, a coronal electric current tends to survive without being dissipated, so the free magnetic energy provided by a coronal electric current is normally hard to release in the corona. This work aims at clarifying how a coronal electric current system is structurally developed into a system responsible for producing a flare. Toward this end, we perform diffusive MHD simulations for the emergence of a magnetic flux tube with different twist applied to it, and go through the process of structuring a coronal electric current in a twisted flux tube emerging to form a coronal magnetic structure. Interestingly, when a strongly twisted flux tube emerges, there spontaneously forms a structure inside the flux tube, where a coronal electric current changes flow pattern from field-aligned dominant to cross-field dominant. We demonstrate that this structure plays a key role in releasing free magnetic energy via rapid dissipation of a coronal electric current, thereby producing a flare.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.374-378
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• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.572-577
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• 2001

The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.317-328
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• 2016

Over the past few decades, CMOS current comparators have been used in a wide range of applications, including analogue circuits, MVL (multiple-valued logic) circuits, and various electronic products. A current comparator is generally used in an ADC (analog-to-digital) converter of sensors and similar devices, and several techniques and approaches have been implemented to design the current comparator to improve performance. To this end, this paper presents a bibliographical survey of recently-published research on different current comparator topologies for low-power and high-speed applications. Moreover, several aspects of the CMOS current comparator are discussed regarding the design implementation, parameters, and performance comparison in terms of the power dissipation and operational speed. This review will serve as a comparative study and reference for researchers working on CMOS current comparators in low-power and high-speed applications.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1998.10a
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• pp.189-199
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• 1998

Wave-induced current model is developed in our study and this model is composed with wave transform model and current model. Two types of wave model are used in our study, one is Copeland(1985) type which is applied in the offshore region and the other is Watanabe and Maruyama(1984) type which is applied in the surf zone. The depth-integrated and time-averaged governing equation of an unsteady nonlinear form is used in the wave induced current model. Lateral mising, radiation stresses, surface and bottom stresses are considered in our current model. Copeland's(1985) relult is used to calculate radiation stress and Berkmeir & Darlymple's(1976) is used as a surface friction formula. Numerical solutions are obtained by Leendertse scheme and compared with Noda's(1974) experimental results for the uniform slope coastal region test and Nishimura & Maruyama's(1985) experimental relults and numerical simulation results for the detached breakwater test. The results from our wave model show good agreement with the others and also show nonlinear effects around the detached breakwater. Wave induced current model is developed in this study and this model shows nonlinear effects around the detached breakwater and can be applied in the surf zone and also consider the friction stresses.

• Journal of Korean Port Research
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• v.12 no.2
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• pp.269-280
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• 1998

A Wave-induced current model is developed in our study and this model is composed with wave transform model and current model. Two types of wave model are used in our study one is Copeland(1985) type which is applied in the offshore region and the other is Watanabe and Maruyama(1984) type which is applied in the surf zone. The depth-integrated and time-averaged governing equation of an unsteady nonlinear form is used in the wave induced current model. Lateral mixing radiation stresses surface and bottom stresses are considered in our current model. Copeland’s(1976) is used as a surface friction formula. Numerical solutions are obtained by Leendertse scheme and compared with Noda’s(1974) experimental results for the uniform slope coastal region test and Nishimura & Naruyama’s (1985) experimental results and numerical simulation results for the detached breakwater. The results from our wave model and wave model and wave-induced current model show good agreements with the others and also show nonlinear effects around the detached breakwater. The model in this study can be applied in the surf zone considering the friction stresses.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1674-1676
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• 1999

Oxide of the form $Mn_3O_4-CuO-Co_3O_4$-NiO-ZnO present properties that make them useful as power NTC thermistor for current limited. Power NTC thermistor electric properties of $Mn_3O_4-CuO-Co_3O_4$-NiO-ZnO system has been measured as a function of temperature and composition and current - voltage, time constant, activation energy, heat dissipation coefficient have also been determined.