• Journal of Digital Contents Society
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• v.18 no.1
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• pp.123-132
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• 2017

The physical display technology is the ultimate display technology that human beings aspire, and the world makes use of laser, plasma and reflector plate. Besides, technology development of binocular stereoscopic display has been actively progressed, but there is a limitation to the intact physical representation such as influence of optical ambient light and brightness. In this paper, the display technology using physical deformation different from the existing optical display is approached as a cultural and emotional perspective. The purpose of this paper is to develop the multivariate display technology that can create 3D realistic stereoscopic images through projecting dynamic images on physically diversified screen by overcoming the limitations of 2D planar digital signage and study how to apply them to video, exhibition and performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.111-111
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• 2006

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.47-56
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• 2002

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.295-298
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• 2003

Reflective mode liquid crystal on silicon (LCoS) microdisplay is the major technology that can produce extremely high-resolution displays. A very large number of pixels can be packed onto the CMOS circuit with integrated drivers that can be projected to any size screen. Large size direct-view thin film transistor (TFT) LCDs becomes very difficult to make and to drive as the information content increases. However, the existing LC alignment technology for the LCoS cell fabrication is still the mechanical rubbing method, which is prone to have minor defects that are not visible normally but can be detrimental if projected to a large screen. In this paper, application of photo-alignment to LCoS fabrication is presented. The alignment is done by three-step exposure process. A MTN $90^{\circ}$ mode is chose as to evaluate the performance of this technique. The comparison with rubbing mode shows the performance of photo-alignment is comparable and even better in some aspect, such as sharper RVC curve and higher contrast ratio.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.175-175
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• 1994

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.56.1-56
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.145.2-145
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• 1998

• Information Display
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• v.5 no.1
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• pp.25-30
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• 2004

Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

• 한국HCI학회:학술대회논문집
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• 2007.02a
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• pp.512-517
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• 2007

There are several researches on 2D gaze tracking techniques for the 2D screen for the Human-Computer Interaction. However, the researches for the gaze-based interaction to the stereo images or contents are not reported. The 3D display techniques are emerging now for the reality service. Moreover, the 3D interaction techniques are much more needed in the 3D contents service environments. This paper addresses gaze-based 3D interaction techniques on stereo display, such as parallax barrier or lenticular stereo display. This paper presents our researches on 3D gaze estimation and gaze-based interaction to stereo display.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.