• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1613-1617
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• 2006

The total light efficiencies of the novel 1.9" transflective tRGB-t/rW and tRGB-rW TFT LCDs are calculated and they are implemented by the traditional 7-mask ${\alpha}$-Si processing. Then, the two vehicles are turned on with the appropriate Sub-Pixel Rendering White (SPRW) algorithms, so they can exhibit the extra luminance without the original visual resolution loss. Their outstanding optical properties are approved by measuring the contrast ratio (C.R.) and the NTSC ratio. Because they utilize the light resource very effectively and efficiently, they are very suitable for the dark indoor and the bright outdoor environments.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1592-1594
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• 2005

LCDs with an additional white sub-pixel (RGBW LCDs) have been developed mainly to achieve higher panel transmittance. However this RGBW pixel structure causes the perceptual color difference between RGBW and RGB LCDs due to decreased primary color luminance. To solve this problem, we proposed and developed RGBW conversion algorithms that function adaptively as a displayed image changes. The test results show that the perceptual color difference could be solved to some degree by applying these new algorithms.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.539-542
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• 2003

We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}m$, the transmittance at the center of pixel and common electrodes is low due to stronger influence of surface anchoring that holds the LC to the initial state than twisting force induced by neighboring LCs. In case of a large cell gap of 4 ${\mu}m$, the influence of surface anchoring force becomes weak so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we conclude that the light efficiency in the device is dependent on the cell gap.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.320-323
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• 2000

In the resent years, the Thin Film Transistor Liquid Crystal Display(TFT-LCD) have trend toward larger panel sizes and higher spatial and/or gray-scale resolution. In this trend, Because of its low field effect mobility, a-Si TFT is change to poly-Si TFT. In this paper, both effective-medium model of poly-Si TFTs and empirical capacitance model are applied to Pixel Design Array Simulation Tool (PDAST) and the pixel characteristics of TFT-LCD array were simulated, which were compared with the results calculated by Aim-Spice.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.5
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• pp.2273-2286
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• 2018

This paper describes transformations between elemental image arrays and a RGBD image for three-dimensional integral imaging and transmitting systems. Two transformations are introduced and analyzed in the proposed method. Normally, a RGBD image is utilized in efficient 3D data transmission although 3D imaging and display is restricted. Thus, a pixel-to-pixel mapping is required to obtain an elemental image array from a RGBD image. However, transformations and their analysis have little attention in computational integral imaging and transmission. Thus, in this paper, we introduce two different mapping methods that are called as the forward and backward mapping methods. Also, two mappings are analyzed and compared in terms of complexity and visual quality. In addition, a special condition, named as the hole-free condition in this paper, is proposed to understand the methods analytically. To verify our analysis, we carry out experiments for test images and the results indicate that the proposed methods and their analysis work in terms of the computational cost and visual quality.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.746-748
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• 2004

a-Si TFTs with field-effect mobility of 1.2 $cm^2$/V-s have been fabricated on plastic substrate. Pixel circuits on plastic for AMOLED were made with the same low-temperature fabrication process. The circuits compensate for $V_T$-shift, exhibit high output current, retain functionality and drive current level during long-time continuous operation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.20-23
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• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$, depth 124$\mu\textrm{m}$ , pitch 274$\mu\textrm{m}$ was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6nm Ra in grooving Si. Barrier ribs were formed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waveness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.