• Title/Summary/Keyword: Display Pixel

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A Study on the Application of Stereoscopic Depth Value in VR HMD (VR HMD 기반의 스테레오스코픽 깊이 값 적용 연구)

  • Son, Ho-Jun;Kim, Jung-Ho;Lee, Seung-Hyun;Hamacher, Alaric;Kwon, Soon-Chul
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.6 no.4
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    • pp.31-40
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    • 2016
  • Recently, technology of Virtual Reality(VR) based on HMD among various kinds of VR implemented products has received widespread attention. Major IT-related companies around the world participated in VR HMD research and development. Therefore, the possibility of the spread of VR HMD has been highly praised. Demands of VR HMD products using Smart Phone has been especially increased so that it is required to create a high quality of VR contents. The purpose of study in this paper is to apply the depth value of stereoscopic to VR HMD. To implement it, we analyzed VR HMD optical system and converted an experimental image to virtual depth caused by binocular disparity based on the result of calculating NPP(Native Pixel Parallax). We produced the image of stereoscopic applied with the value converted and applied to VR HMD. This study is expected to be utilized as a VR content creation field of quantitative data.

Microcrystalline Si TFTs with Low Off-Current and High Reliability

  • Kim, Hyun-Jae;Diep, Bui Van;Bonnassieux, Yvan;Djeridane, Yassine;Abramov, Alexey;Pere, Roca i Cabarrocas
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1025-1028
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    • 2005
  • Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

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Dynamic Analysis of the PDLC-based Electro-Optic Modulator for Fault Identification of TFT-LCD (박막 트랜지스터 기판 검사를 위한 PDLC 응용 전기-광학 변환기의 동특성 분석)

  • 정광석;정대화;방규용
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.4
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    • pp.92-102
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    • 2003
  • To detect electrical faults of a TFT (Thin Film Transistor) panel for the LCD (Liquid Crystal Display), techniques of converting electric field to an image are used One of them is the PDLC (polymer-dispersed liquid crystal) modulator which changes light transmittance under electric field. The advantage of PDLC modulator in the electric field detection is that it can be used without physically contacting the TFT panel surface. Specific pattern signals are applied to the data and gate electrodes of the panel to charge the pixel electrodes and the image sensor detects the change of transmittance of PDLC positioned in proximity distance above the pixel electrodes. The image represents the status of electric field reflected on the PDLC so that the characteristic of the PDLC itself plays an important role to accurately quantify the defects of TFT panel. In this paper, the image of the PDLC modulator caused by the change of electric field of the pixel electrodes on the TFT panel is acquired and how the characteristics of PDLC reflect the change of electric field to the image is analyzed. When the holding time of PDLC is short, better contrast of electric field image can be obtained by changing the instance of applying the driving voltage to the PDLC.

AN EXPERIMENTAL STUDY ON THE TOOTH ROOT RESORPTION FOR DIGITAL RADIOGRAPHY (디지털 방사선 촬영술을 이용한 치근 흡수 판독에 관한 실험적 연구)

  • Oh Phill-Gyo;Kim Jae-Duk
    • Journal of Korean Academy of Oral and Maxillofacial Radiology
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    • v.25 no.2
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    • pp.375-387
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    • 1995
  • The purpose of this study was to quantitatively evaluated experimental tooth root resorption for digital radiography. For this study, experimentally three root sites were used, and radiograms were taken with standardized apparatus. Digital imaging system were consisted of NEC PC-980l(computer), TRINITRON(monitor), SONY XC-711 CCD camera. The display monitor had a resolution of 512X512 pixels. The obtained results were as follows: 1. In the difference of the four X-ray film of the contrast correction, the contrast difference was one gray scale variation at mean value. 2. Viewing of the view box of the periapical radiographs, experimental tooth root resorption of the periapical area of the first premolar, middle of mesial surface of the first molar mesial root, middle of lingual surface of the first molar distal root were recognized by increased diameter. 3. On the analysis by histogram, the periapical area of the first premolar, the middle of mesial surface of the first molar mesial root were each recognized tooth root resorption of the 5,6,7 pixel, 2,4,5 pixel by increased diameter. 4. On the analysis by histogram, the middle of lingual surface of the first molar distal root was each recognized tooth root resorption of the none, 3,6 pixel by increased diameter.

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Improvement of Electrode Structure of FFS Mode LCD for Obtaining High Transmittance (FFS모드 LCD의 투과율 향상을 위한 전극 구조 개선)

  • Kim, Bong-Sik;Oh, Hyun-Min;Park, Woo-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.309-313
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    • 2011
  • In this study, we proposed a novel electrode structure for the fringe field switching (FFS) mode LCD and performed a three-dimensional computer simulation to calculate the optical transmittance for the new structure. In the simulation Erickson-leslie equation and Berreman $4{\times}4$ matrix were used for obtaining the director distribution profiles of liquid crystal molecules and the electro-optical characteristics, respectively. Considering the complexity of the motional equation of the liquid crystal molecules, FDM (finite difference method) was used as a numerical method. From the results, We revealed that the light transmission of the newly designed pixel structure is expended to the edge of the pixel electrode. We also confirmed that the light transmittance increased more than 13% compared to that of the conventional electrode structure.

A Study on the optimization of overlap scanning method for the enhancement of display quality in LC Displays (액정 표시기의 화질 향상을 위한 중첩구동방식의 최적화에 관한 연구)

  • 최선정;김용득
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.32B no.10
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    • pp.1280-1285
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    • 1995
  • In this paper the optimized overlap driving scheme for improving the reduction problem of the operating voltage range occured by the overlap driving scheme proposed precedently and increasing the contrast ratio of screen image in the simple matrix LCDs is proposed. The characteristic estimation of the proposed method was performed in a condition that the number of scan electrodes was 120 and the threshold voltage of LC pixel was 2V and the overlap rate of scan signal was varied from 0% to 40% . As a result of estimation compared with the overlap driving scheme proposed precedently, this new method was certified as a method which it could increase the operating voltage range of the LC pixel by 16% in 20% overlap condition and it's operating voltage range was also increased very much with the increase of the overlap rate. Consequently this newly proposed method was certified as a method which it could maintain the improvement effect of the operating characteristics obtained by the overlap driving scheme proposed precedently with the big improvement in the contrast ratio of screen image.

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Development of the advanced transflective LCDs with high optical performance

  • Lee, Jong-Hwae;Park, Ku-Hyun;Kim, Hyun-Ho;Yoon, Jae-Kyung;Park, Ki-Bok;Shin, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1330-1332
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    • 2007
  • We have newly developed transflective LCDs with a specific sub-pixel and the single cell gap structure. In our structure, the overall transmittance and reflectance has become higher than typical transflective LCDs. Furthermore, it can simplify the fabrication process of the transflective LCDs.

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Advanced Pixel Structure for Higher Aperture Ratio in TFT-LCD

  • Kim, Jong-Hoon;Noh, Sang-Yong;Kang, Shin-Tack;Lee, Jong-Hwan;Choi, Kwang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.17-19
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    • 2008
  • An advanced TFT-LCD structure was proposed to increase aperture ratio (AR). In this structure, metal layers formed below the data lines are used as light-blocking layers, achieving higher AR ratio than that of a conventional structure. Since average misalignment between the metal light-blocking layers and pixel electrodes is smaller than that of black matrixes on color filter glass, substantially less light-blocking areas are needed to achieve misalignment margin. The AR of the LCD panel fabricated by using proposed structure was enhanced by 18.7 % over that of the conventionally structured panel.

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Advanced Cell Structure for High Contrast Ratio in Charge Share S-PVA Monitors

  • Kim, Su-Jeong;Kim, Kwang-Hyun;Jung, Ji-Yoon;Heo, Jeong-Uk;Lee, Nam-Seok;Kim, Kyeong-Hyeon;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.288-291
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    • 2008
  • This paper describes a new S-PVA cell structure which achieves enhanced contrast ratio by adopting a step-like patterned common electrode between the high sub-pixel and low sub-pixel electrodes without loss of transmittance. A 24-inch panel was developed for monitor applications and measured contrast ratio and white luminance were over 2500:1 and 400cd/m2, respectively.

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Optimization of H-IPS Structure for High Aperture Ratio.

  • Lee, Do-Young;Kim, Do-Sung;Kang, Byung-Goo;Kim, Eui-Tae;Kim, Bo-Ram;Kim, Jung-Han;Lim, Byung-Ho;Ahn, Byung-Chul
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.290-293
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    • 2006
  • We designed the H-IPS that has similar aperture ratio to the AS-IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H-IPS structure, and minimized the width of pixel and common electrodes. Without the additional process, we could obtain the similar brightness with that of AS-IPS in 15inch SXGA+ Panel.

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